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US4533931A
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Reduction reoxidation type semiconductor ceramic condenser
Assignee: Murata Manufacturing Co Ltd
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Filing: 1984-02-06
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Granted: 1985-08-06
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Expires: 2004-02-06
Abstract
Abstract A reduction reoxidation ceramic semiconductor having a central ceramic portion with a dielectric layer formed thereon by oxidation. The ohmic electrode is formed from a material (e.g. an aluminum-glass frit) that prevents formation of the dielectric layer under the ohmic electrode during reoxidation. The non-ohmic electrode is formed on the dielectric layer.
Inventors
- 👤 Harufumi Mandai
- 👤 Kiyoshi Iwai
- 👤 Yasuyuki Naito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:25
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1272
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
107 words
A reduction reoxidation type ceramic semiconductor condenser comprising: a semiconductor ceramic portion, a layer of a first material on a surface of said ceramic portion forming an ohmic electrode thereon, a dielectric layer on another surface of said ceramic portion, said dielectric layer being formed by reoxidation of said ceramic, a layer of a second material on a surface of said dielectric layer, said second material forming a non-ohmic electrode thereon, said ohmic layer being comprised of electrode forming material capable of forming said ohmic electrode during reoxidation of said ceramic portion while preventing significant oxidation of said ceramic portion in contact with said electrode forming material.
Claim 2
Dependent Claim
107 words
A reduction reoxidation type ceramic semiconductor condenser comprising: a semiconductor ceramic portion, a layer of a first material on a surface of said ceramic portion forming an ohmic electrode thereon, a dielectric layer on another surface of said ceramic portion, said dielectric layer being formed by reoxidation of said ceramic, a layer of a second material on a surface of said dielectric layer, said second material forming a non-ohmic electrode thereon, said ohmic layer being comprised of electrode forming material capable of forming said ohmic electrode during reoxidation of said ceramic portion while preventing significant oxidation of said ceramic portion in contact with said electrode forming material.
Claim 3
Dependent Claim
22 words
The reduction reoxidation type ceramic semiconductor condenser of claim 1 wherein said electrode forming material is a glass frit containing aluminum metal.
Claim 4
Dependent Claim
20 words
The reduction reoxidation type ceramic semiconductor condenser of claim 2 wherein said ohmic electrode consists essentially of aluminum and glass.
Claim 5
Dependent Claim
43 words
The reduction reoxidation type ceramic semiconductor condenser of claim 1 wherein said condenser is relatively thin and substantially planar, said condenser having relatively small edges and relatively large opposite planar surfaces, said electrode being located on the opposite planar surfaces of said condenser.
Claim 6
Dependent Claim
43 words
The reduction reoxidation type ceramic semiconductor condenser of claim 4 wherein said condenser includes non-ohmic electrode in the form of layers on opposite planar surfaces of said condenser, said non-ohmic electrode layers being electrically connected by connector means passing through said ceramic portion.
Claim 7
Independent Claim
131 words
A method of forming a reduction reoxidation type ceramic semiconductor condenser from a ceramic semiconductor, said method comprising: applying a layer of non-ohmic electrode forming material to one portion of said ceramic semiconductor and applying a layer of ohmic electrode forming material to another portion of said ceramic semiconductor, said ohmic electrode forming material being disposed to form said ohmic electrode on said ceramic material during reoxidation while preventing reoxidation of the portions of said ceramic semiconductor in contact with said ohmic electrode forming material; and exposing the ceramic semiconductor having the electrode forming layers thereon to an oxidizing atmosphere and elevated temperatures sufficient to form a dielectric layer on said ceramic semiconductor by reoxidation of the surface of said ceramic semiconductor not in contact with said ohmic electrode forming material.
Claim 8
Independent Claim
131 words
A method of forming a reduction reoxidation type ceramic semiconductor condenser from a ceramic semiconductor, said method comprising: applying a layer of non-ohmic electrode forming material to one portion of said ceramic semiconductor and applying a layer of ohmic electrode forming material to another portion of said ceramic semiconductor, said ohmic electrode forming material being disposed to form said ohmic electrode on said ceramic material during reoxidation while preventing reoxidation of the portions of said ceramic semiconductor in contact with said ohmic electrode forming material; and exposing the ceramic semiconductor having the electrode forming layers thereon to an oxidizing atmosphere and elevated temperatures sufficient to form a dielectric layer on said ceramic semiconductor by reoxidation of the surface of said ceramic semiconductor not in contact with said ohmic electrode forming material.
Claim 9
Dependent Claim
18 words
The method of claim 6 wherein said ohmic electrode forming material is a glass frit containing aluminum metal.
Claim 10
Dependent Claim
14 words
The method of claim 7 wherein said glass frit comprises more than 50% aluminum.
Claim 11
Dependent Claim
19 words
The method of claim 8 wherein said ohmic electrode forming material comprises glass, aluminum metal and an organic binder.
Claim 12
Dependent Claim
30 words
The method of claim 7 wherein said glass frit consists essentially of borosilica lead glass and aluminum metal, said aluminum metal comprising more than 50% by weight of said frit.
References Cited (Backward Citations)
US3529218A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-05 | 1989-02-04 | 1989-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-05 | 1993-02-04 | 1993-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-05 | 1997-02-04 | 1997-08-06 | $7700.00 | Window Closed / Lapsed |