Heating resistor of single crystal manufacturing apparatus

Claim 2

A heating resistor of a single crystal manufacturing apparatus which has a structure such that a cylindrical side wall portion for coaxially surrounding a melting pot, a bottom portion for supporting said side wall portion, and a cylindrical portion which supports said bottom portion and which is connected to power supply electrodes are integrally formed, and a plurality of slits are formed extending along said side wall portion and said bottom portion such that said heating resistor is formed to constitute a heating conductor which is connected from one of said power supply electrodes to the other of said power supply electrodes in a zigzag manner, wherein said bottom portion has a maximum thickness which is not greater than that of said side wall portion, and said bottom portion has a minimum inner diameter which falls within a range of 20 to 80% of an inner diameter of a lowermost portion of said side wall portion.

Claim 3

The heating resistor according to claim 1, wherein the slits are of substantially equal width through the length thereof.

Claim 4

The heating resistor according to claim 1, wherein said bottom portion has a minimum inner diameter which falls within a range of 30 to 60% of an inner diameter of a lowermost portion of said side wall portion.

Claim 5

The heating resistor according to claim 1, wherein the ratio of a maximum wall thickness dBO of said bottom portion to a maximum wall thickness dWO of said side wall portion, i.e., dBO/dWO falls in the range of 0.5 to 1.

Claim 6

The heating resistor according to claim 1, wherein said single crystal manufacturing apparatus is of a type which is adopted for carrying out LEC method.

Claim 7

A heating resistor of a single crystal manufacturing apparatus which has a structure such that a cylindrical side wall portion for coaxially surrounding a melting pot, a bottom portion for supporting said side wall portion, and a cylindrical portion which supports said bottom portion and which is connected to power supply electrodes are integrally formed, and a plurality of slits are formed extending along said side wall portion and said bottom portion such that said heating resistor is formed to constitute a heating conductor which is connected from one of said power supply electrodes to the other of said power supply electrodes in a zigzag manner, wherein said bottom portion has a maximum thickness which is not greater than that of said side wall portion, and said bottom portion has a minimum inner diameter which falls within a range of 20 to 80% of an inner diameter of a lower most portion of said side wall portion, a temperature distribution along said side wall portion being such that the lower the side wall portion is, the higher the temperature becomes, and the temperature distribution along the radial direction of molten crystal material in the pot being such that the nearer the center of the molten crystal material, the lower the temperature becomes with a temperature difference between the peripheral portion and the center portion of the molten crystal material being 10° C. or less.

Claim 8

A heating resistor of a single crystal manufacturing apparatus which has a structure such that a cylindrical side wall portion for coaxially surrounding a melting pot, a bottom portion for supporting said side wall portion, and a cylindrical portion which supports said bottom portion and which is connected to power supply electrodes are integrally formed, and a plurality of slits are formed extending along said side wall portion and said bottom portion such that said heating resistor is formed to constitute a heating conductor which is connected from one of said power supply electrodes to the other of said power supply electrodes in a zigzag manner, wherein said bottom portion has a maximum thickness which is not greater than that of said side wall portion, and said bottom portion has a minimum inner diameter which falls within a range of 20 to 80% of an inner diameter of a lower most portion of said side wall portion, a temperature distribution along said side wall portion being such that the lower the side wall portion is, the higher the temperature becomes, and the temperature distribution along the radial direction of molten crystal material in the pot being such that the nearer the center of the molten crystal material, the lower the temperature becomes with a temperature difference between the peripheral portion and the center portion of the molten crystal material being 10° C. or less.