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Tunable semiconductor laser

Assignee: Omron Corp
•
Filing: 1982-07-30
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Granted: 1985-07-30
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Expires: 2002-07-30
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Abstract

Abstract A tunable semiconductor laser has an active layer, an insulating film made of a piezoelectric material and formed on a portion of the active layer, and an interdigital transducer provided on the insulating film for generating a surface acoustic wave. The laser oscillation wavelength is variable by varying the wavelength of the surface acoustic wave generated by the transducer. When adapted to produce surface acoustic waves of different frequencies at different locations, the transducer affords an enlarged tunable wavelength band. A plurality of Gunn diodes effecting oscillation at different frequencies are usable in place of the transducer.

Inventors

  • 👤 Tsukasa Yamashita
  • 👤 Kazuhiko Mori
  • 👤 Masaharu Matano
  • 👤 Norihiro Ota

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 22:33
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/10; H01S3/105; H01S3/1055; H01S5/00; H01S5/10; H01S5/12; H01S5/125; H01S5/40; H01S5/4025; H01S5/4031; H01S5/04; H01S5/042; H01S5/0425; H01S5/04256; H01S5/06; H01S5/0607; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06256; H01S5/1234; H01S5/4087

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 64 words
In a tunable semiconductor laser having an active layer, the laser comprising: an insulating film made of piezoelectric material formed above a portion of the active layer; and means for selectively reflecting light of a specified wavelength emitted within the active layer, the reflecting means being capable of varying the wavelength of the light to be reflected and being provided on the insulating film.
Claim 2
Dependent Claim 64 words
In a tunable semiconductor laser having an active layer, the laser comprising: an insulating film made of piezoelectric material formed above a portion of the active layer; and means for selectively reflecting light of a specified wavelength emitted within the active layer, the reflecting means being capable of varying the wavelength of the light to be reflected and being provided on the insulating film.
Claim 3
Dependent Claim 27 words
In a tunable semiconductor laser as defined in claim 1 wherein the light reflecting means comprises means for generating a surface acoustic wave having a variable frequency.
Claim 4
Dependent Claim 38 words
In a tunable semiconductor laser as defined in claim 1 wherein the light reflecting means comprises means for generating surface acoustic waves of different frequencies at different locations, each of the surface acoustic waves having a variable frequency.
Claim 5
Dependent Claim 28 words
In a tunable semiconductor laser as defined in claim 1 wherein the light reflecting means comprises an interdigital transducer for generating a surface acoustic wave of variable frequency.
Claim 6
Dependent Claim 40 words
In a tunable semiconductor laser as defined in claim 1 wherein the light reflecting means comprises an interdigital transducer for generating surface acoustic waves of different frequencies at different locations, each of the surface acoustic waves having a variable frequency.
Claim 7
Dependent Claim 26 words
In a tunable semiconductor laser as defined in any one of claims 4 or 5 wherein the interdigital transducer is driven by a frequency-variable high-frequency oscillator.
Claim 8
Dependent Claim 55 words
In a tunable semiconductor laser as defined in claim 1 wherein the light reflecting means comprises a plurality of Gunn diodes each of which has a pair of electrodes at opposite sides thereof and wherein the spacing between the electrodes of the Gunn diodes are different from each other to effect oscillation at different frequencies.
Claim 9
Dependent Claim 31 words
In a tunable semiconductor laser as defined in claim 1 wherein the light reflecting means comprises a grating and a pair of electrodes provided on the opposite sides of the grating.
Claim 10
Dependent Claim 47 words
In a tunable semiconductor laser as defined in claim 5 wherein the interdigital transducer includes a plurality of linear electrodes, and the linear electrodes are each in the form of a circular arc to inhibit spreading out of the surface acoustic wave to be generated and propagated.
Claim 11
Dependent Claim 32 words
In a tunable semiconductor laser as defined in claim 9 wherein the interdigital transducer includes a plurality of linear electrodes, and the pitch of the linear electrodes differs from location to location.
Claim 12
Dependent Claim 23 words
In a tunable semiconductor laser as defined in claim 7 which is provided with means for selectively driving the plurality of Gunn diodes.
Claim 13
Dependent Claim 28 words
In a tunable semiconductor laser as defined in claim 8 which is provided with a power source for applying d.c. or a.c. voltage across the pair of electrodes.
Claim 14
Dependent Claim 51 words
In a tunable semiconductor laser having an active layer, the laser comprising: an insulating film made of piezoelectric material formed above a portion of the active layer; and light reflecting means comprising a plurality of interdigital transducers being provided on the insulating film and being driven by a d.c. power source.
Claim 15
Dependent Claim 51 words
In a tunable semiconductor laser having an active layer, the laser comprising: an insulating film made of piezoelectric material formed above a portion of the active layer; and light reflecting means comprising a plurality of interdigital transducers being provided on the insulating film and being driven by a d.c. power source.

References Cited (Backward Citations)

US3755671A Cited
US4039249A Cited
JPS5214392A Cited
US4286838A Cited
US4216440A Cited
US4318058A Cited
US4327962A Cited
US4390236A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-07-29 1989-01-28 1989-07-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-07-29 1993-01-28 1993-07-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-07-29 1997-01-28 1997-07-30 $7700.00 Window Closed / Lapsed

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