US4532372A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Barrier layer for photovoltaic devices
Assignee: United Solar Systems Corp
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Filing: 1983-12-23
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Granted: 1985-07-30
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Expires: 2003-12-23
Abstract
Abstract An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a magnesium fluoride based material. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.
Inventors
- 👤 Prem Nath
- 👤 Masatsugu Izu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:01
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
111 words
In a semiconductor device comprising a first electrode; an active semiconductor body atop the first electrode, said semiconductor body adapted to provide for the flow of electrical current in response to light energy incident thereon; a second electrode atop the semiconductor body; and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes; the improvement comprising: a continuous transparent barrier layer formed of a magnesium fluoride based material operatively disposed between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device.
Claim 2
Dependent Claim
111 words
In a semiconductor device comprising a first electrode; an active semiconductor body atop the first electrode, said semiconductor body adapted to provide for the flow of electrical current in response to light energy incident thereon; a second electrode atop the semiconductor body; and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes; the improvement comprising: a continuous transparent barrier layer formed of a magnesium fluoride based material operatively disposed between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device.
Claim 3
Dependent Claim
107 words
In a photovoltaic device comprising a substrate electrode; an active semiconductor body atop the substrate electrode; a transparent, electrically conductive electrode atop the semiconductor body; and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes; said semiconductor body adapted to generate electrical current in response to light incident thereon; the improvement comprising: a continuous transparent barrier layer formed of a magnesium fluoride based material operatively disposed between the semiconductor body and the transparent electrode, for decreasing the flow of electrical current through said at least one defect region of said photovoltaic device.
Claim 4
Dependent Claim
107 words
In a photovoltaic device comprising a substrate electrode; an active semiconductor body atop the substrate electrode; a transparent, electrically conductive electrode atop the semiconductor body; and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes; said semiconductor body adapted to generate electrical current in response to light incident thereon; the improvement comprising: a continuous transparent barrier layer formed of a magnesium fluoride based material operatively disposed between the semiconductor body and the transparent electrode, for decreasing the flow of electrical current through said at least one defect region of said photovoltaic device.
Claim 5
Independent Claim
118 words
A method of making an improved semiconductor device of the type comprising a first electrode; an active semiconductor body atop the first electrode, said semiconductor body adapted to provide for the flow of electrical current in response to light incident thereon; and a second electrode atop the semiconductor body; and at least one defect region capable of providing a low resistance shunt path for the flow of current between the electrodes; the method including the step of: operatively disposing a continuous transparent barrier layer formed of a magnesium fluoride based material between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device.
Claim 6
Independent Claim
118 words
A method of making an improved semiconductor device of the type comprising a first electrode; an active semiconductor body atop the first electrode, said semiconductor body adapted to provide for the flow of electrical current in response to light incident thereon; and a second electrode atop the semiconductor body; and at least one defect region capable of providing a low resistance shunt path for the flow of current between the electrodes; the method including the step of: operatively disposing a continuous transparent barrier layer formed of a magnesium fluoride based material between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device.
Claim 7
Independent Claim
122 words
A method of substantially preventing operational mode failures of a photovoltaic device which comprises a first electrode, an active semiconductor body atop the first electrode, said semiconductor body adapted to provide for the flow of electrical current in response to light incident thereon; a second electrode atop the semiconductor body; and at least one latent defect region capable of providing a low resistance shunt path for the flow of electrical current between the electrodes; the method including the step of: operatively disposing a continuous transparent barrier layer formed of a magnesium fluoride based material between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one latent defect region of said photovoltaic device.
Claim 8
Independent Claim
122 words
A method of substantially preventing operational mode failures of a photovoltaic device which comprises a first electrode, an active semiconductor body atop the first electrode, said semiconductor body adapted to provide for the flow of electrical current in response to light incident thereon; a second electrode atop the semiconductor body; and at least one latent defect region capable of providing a low resistance shunt path for the flow of electrical current between the electrodes; the method including the step of: operatively disposing a continuous transparent barrier layer formed of a magnesium fluoride based material between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one latent defect region of said photovoltaic device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-29 | 1989-01-28 | 1989-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-29 | 1993-01-28 | 1993-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-29 | 1997-01-28 | 1997-07-30 | $7700.00 | Window Closed / Lapsed |