Thin film photovoltaic device with multilayer substrate

Claim 2

In a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact with at least one semiconductor layer therebetween of a material of the type formed by high temperature growth, the improvement being said ohmic back contact comprises a multilayer substrate capable of withstanding the high temperature for forming said semiconductor layer, said semiconductor layer which is adjacent said substrate being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, said substrate layers including (a) a lowermost support layer remote from said semiconductor layer on which all of the other layers of said device are formed, (b) an uppermost carbon diffusion barrier layer adjacent said semiconductor layer, (c) a metal layer of high conductivity below said diffusion barrier layer and having an expansion coefficient equal to or slightly greater than the expansion coefficient of said semiconductor layer, and (d) an intermediate metal carbide layer between said diffusion barrier layer and said metal layer.

Claim 3

In the device of claim 1 wherein the multilayer substrate includes at least three separate layers.

Claim 4

In the device of claim 1 wherein said support layer and said metal layer comprise the same layer.

Claim 5

In the device of claim 1 wherein said semiconductor is zinc phosphide.

Claim 6

In the device of claim 4 wherein said zinc phosphide layer is from two to four microns thick.

Claim 7

In the device of claim 1 wherein said metal layer is iron.

Claim 8

In the device of claim 1 wherein said metal layer is iron, and said support layer is mica.

Claim 9

In a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact with at least one semiconductor layer therebetween of a material of the type formed by high temperature growth, the improvement being said ohmic back contact comprises a multilayer substrate capable of withstanding the high temperature for forming said semiconductor layer, said semiconductor layer which is adjacent said substrate being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, said substrate layers including (a) a lowermost support layer remote from said semiconductor layer on which all of the other layers of said device are formed, (b) an uppermost silicon diffusion barrier layer adjacent said semiconductor layer, (c) a metal layer of high conductivity being below said silicon layer and having an expansion coefficient equal to or slightly greater than the expansion coefficient of said semiconductor layer, and (d) means for causing said silicon layer to adhere to said metal layer.

Claim 10

In a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact with at least one semiconductor layer therebetween of a material of the type formed by high temperature growth, the improvement being said ohmic back contact comprises a multilayer substrate capable of withstanding the high temperature for forming said semiconductor layer, said semiconductor layer which is adjacent said substrate being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, said substrate layers including (a) a lowermost support layer remote from said semiconductor layer on which all of the other layers of said device are formed, (b) an uppermost silicon diffusion barrier layer adjacent said semiconductor layer, (c) a metal layer of high conductivity being below said silicon layer and having an expansion coefficient equal to or slightly greater than the expansion coefficient of said semiconductor layer, and (d) means for causing said silicon layer to adhere to said metal layer.

Claim 11

In the device of claim 8 wherein the multilayer substrate includes at least three separate layers.

Claim 12

In the device of claim 8 wherein said support layer and said metal layer comprise the same layer.

Claim 13

In the device of claim 8 wherein said semiconductor is zinc phosphide.

Claim 14

In the device of claim 11 wherein said zinc phosphide layer is from two to four microns thick.

Claim 15

In the device of claim 8 wherein said metal layer is iron, and said support layer is mica.

Claim 16

In the method of making a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact, with at least one semiconductor layer therebetween of a material which is formed in the device by high temperature growth, the improvement comprising forming the ohmic back contact as a multilayer substrate capable of withstanding said high temperature for forming the semiconductor layer, the semiconductor layer being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, the steps for forming the multilayer substrate including providing a lowermost support layer for supporting all of the other layers of the device, forming on the support layer a metal layer having high conductivity and having an expansion coefficient equal to or slightly greater than that of the semiconductor layer, forming on the metal layer a carbon diffusion barrier layer, forming an intermediate metal carbide layer between the barrier layer and the metal layer, and forming the semiconductor layer on the barrier layer.

Claim 17

In the method of making a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact, with at least one semiconductor layer therebetween of a material which is formed in the device by high temperature growth, the improvement comprising forming the ohmic back contact as a multilayer substrate capable of withstanding said high temperature for forming the semiconductor layer, the semiconductor layer being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, the steps for forming the multilayer substrate including providing a lowermost support layer for supporting all of the other layers of the device, forming on the support layer a metal layer having high conductivity and having an expansion coefficient equal to or slightly greater than that of the semiconductor layer, forming on the metal layer a carbon diffusion barrier layer, forming an intermediate metal carbide layer between the barrier layer and the metal layer, and forming the semiconductor layer on the barrier layer.

Claim 18

In the method of claim 14 wherein the support, metal and barrier layers are formed at low temperature, and the metal carbide intermediate layer between the barrier and metal layers is formed at high temperature from reaction of the barrier and metal layers.

Claim 19

In the method of claim 15 wherein the intermediate layer is formed by a high temperature heating step independent of the semiconductor growing step.

Claim 20

In the method of claim 15 wherein the intermediate layer results from the high temperature heating of the semiconductor growing step.

Claim 21

In the method of claim 14 wherein the semiconductor is zinc phosphide and the metal layer is iron.

Claim 22

In the method of claim 18 wherein the zinc phosphide layer is grown to a thickness of two to four microns.

Claim 23

In the method of making a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact, with at least one semiconductor layer therebetween of a material which is formed in the device by high temperature growth, the improvement comprising forming the ohmic back contact as a multilayer substrate capable of withstanding said high temperature for forming the semiconductor layer, the semiconductor layer being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, the steps for forming the multilayer substrate including providing a lowermost support layer for supporting all of the other layers of the device, forming a metal layer having high conductivity and having an expansion coefficient equal to or slightly greater than that of the semiconductor layer, forming on the metal layer a silicon diffusion barrier layer adjacent the semiconductor layer providing means for causing the silicon diffusion barrier and metal layers to adhere to each other, and forming the semiconductor layer on the barrier layer.

Claim 24

In the method of making a thin film photovoltaic device having an ohmic back contact and a transparent electrical contact, with at least one semiconductor layer therebetween of a material which is formed in the device by high temperature growth, the improvement comprising forming the ohmic back contact as a multilayer substrate capable of withstanding said high temperature for forming the semiconductor layer, the semiconductor layer being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, the steps for forming the multilayer substrate including providing a lowermost support layer for supporting all of the other layers of the device, forming a metal layer having high conductivity and having an expansion coefficient equal to or slightly greater than that of the semiconductor layer, forming on the metal layer a silicon diffusion barrier layer adjacent the semiconductor layer providing means for causing the silicon diffusion barrier and metal layers to adhere to each other, and forming the semiconductor layer on the barrier layer.

Claim 25

In the method of claim 20 wherein the support layer and the metal layer are formed as separate layers.

Claim 26

In the method of claim 20 wherein the support layer and the metal layer are formed from the same layer.

Claim 27

In the method of claim 20 wherein the semiconductor is zinc phosphide and the metal layer is iron.

Claim 28

In the method of claim 23 wherein the zinc phosphide layer is grown to a thickness of two to four microns.

Claim 29

In the method of claim 20 wherein the support layer is mica and the metal layer is iron.

Claim 30

In the method of claim 20 wherein the silicon barrier layer is formed by electron beam evaporation.