US4531267A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a pressure sensor
Assignee: Honeywell Inc
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Filing: 1984-01-26
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Granted: 1985-07-30
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Expires: 2004-01-26
Abstract
Abstract A pressure sensor comprising a piezoelectric material formed in a geometry which provides a piezoelectric output signal when subjected to a pressure. The piezoelectric material also has a pyroelectric output signal. The present sensor further comprises conductive contacts having a geometry for enhancing the piezoelectric output signal and for substantially eliminating the pyroelectric output signal.
Inventors
- 👤 Michele Royer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:12
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0072; G01L9/0073; G01L9/008; Y; Y10; Y10S; Y10S310/00; Y10S310/80; Y10T; Y10T29/00; Y10T29/42
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
100 words
A method of forming a pressure sensor, comprising: providing a semiconductor body having a first surface and a second surface; forming a pair of electrodes encapsulated in dielectric onto the first surface; forming a layer comprising piezoelectric material onto the dielectric encapsulating the pair of electrodes, the layer having a first surface in contact with the dielectric and a second surface; forming an electrode encapsulated in dielectric onto the second surface of the layer; and etching a portion of the semiconductor body from the second surface of the semiconductor body in order to form a diaphragm in the semiconductor body.
Claim 2
Independent Claim
100 words
A method of forming a pressure sensor, comprising: providing a semiconductor body having a first surface and a second surface; forming a pair of electrodes encapsulated in dielectric onto the first surface; forming a layer comprising piezoelectric material onto the dielectric encapsulating the pair of electrodes, the layer having a first surface in contact with the dielectric and a second surface; forming an electrode encapsulated in dielectric onto the second surface of the layer; and etching a portion of the semiconductor body from the second surface of the semiconductor body in order to form a diaphragm in the semiconductor body.
References Cited (Backward Citations)
US2614416A
Cited
US2967957A
Cited
US3495105A
Cited
US3940974A
Cited
US3943388A
Cited
US4060729A
Cited
US4376919A
Cited
US4370583A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-29 | 1989-01-28 | 1989-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-29 | 1993-01-28 | 1993-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-29 | 1997-01-28 | 1997-07-30 | $7700.00 | Window Closed / Lapsed |