Binder removal from thermoplastically formed SiC article

Claim 2

In the process of producing a sintered body of polycrystalline silicon carbide having a density greater than 80% of the theoretical density for silicon carbide wherein a thermoplastically molded body of sinterable silicon carbide powder and thermoplastic binder is formed, baked to remove said binder and sintered to produce said sintered body, the improvement comprising embedding said molded body in spherical or nominally spherical embedding particles selected from the group consisting of polycrystalline silicon carbide having a density greater than 80% of the theoretical density for silicon carbide, crystalline and/or amorphous free carbon-coated polycrystalline silicon carbide wherein the free carbon has a density greater than 80% of the theoretical density of graphite and wherein the polycrystalline silicon carbide has a density greater than 80% of the theoretical density for silicon carbide, crystalline and/or amorphous free carbon having a density greater than 80% of the theoretical density of graphite and mixtures thereof, said embedding particles having an average diameter ranging from about 10 microns to about 1000 microns, and baking said embedded body to thermally remove said binder leaving no amount thereof which would have a significantly deleteriously effect on said sintered body and recovering said baked body.

Claim 3

The process according to claim 1 wherein said molded body is immersed in said embedding powder.

Claim 4

The process according to claim 1 wherein the resulting sintered body with adherent embedding particles is mechanically treated to remove said adherent embedding particles.

Claim 5

The process according to claim 1 wherein said embedding particles are said free carbon-coated polycrystalline silicon carbide or said free carbon and the resulting sintered body with adherent embedding particle is fired in air at a temperature ranging from about 600° C. to about 1500° C. to remove said adherent embedding particle.

Claim 6

The method according to claim 1 wherein said embedding particle is said polycrystalline silicon carbide.

Claim 7

The method according to claim 1 wherein said embedding particle is said free carbon-coated polycrystalline silicon carbide.

Claim 8

The method according to claim 1 wherein said embedding particle is free carbon.

Claim 9

A process for producing a sintered polycrystalline silicon carbide body which comprises forming a thermoplastically moldable ceramic composition comprising a substantially homogeneous mixture comprising from about 40% by volume to about 60% by volume of a sinterable silicon carbide powder having an average particle size which is submicron and which consists essentially of silicon carbide, a boron additive selected from the group consisting of boron and boron carbide in an amount equivalent to from about 0.3% by weight to about 3% by weight of boron based on said silicon carbide, and an amount of a carbonaceous additive selected from the group consisting of free carbon, a carbonaceous organic material and mixtures thereof equivalent to from about 0.1% by weight to about 5% by weight of free carbon based on said silicon carbide, said carbonaceous organic material completely decomposing at a temperature ranging from 50° C. up to 450° C. to said free carbon and gaseous product of decomposition, and the balance being a thermoplastic organic binder which is thermally removable at a temperature ranging up to 450° C., thermoplastically molding said ceramic composition producing a molded body, embedding said molded body in spherical or nominally spherical embedding particles selected from the group consisting of polycrystalline silicon carbide having a density greater than 80% of the theoretical density for silicon carbide, crystalline and/or amorphous free carbon-coated polycrystalline silicon carbide wherein the free carbon has a density greater than 80% of the theoretical density of graphite and wherein the polycrystalline silicon carbide has a density greater than 80% of the theoretical density for silicon carbide, crystalline and/or amorphous free carbon having a density greater than 80% of the theoretical density of graphite and mixtures thereof, said embedding particles having an average diameter ranging from about 10 microns to about 1000 microns, baking said embedded molded body at a heating rate which has no significant deleterious effect thereon at a temperature ranging up to 450° C. removing said binder leaving no amount therein which would have a significantly deleterious effect on said sintered body, said baking having no significant deleterious effect on said body, recovering the resulting baked body and sintering said baked body at a temperature ranging from about 1900° C. to about 2300° C. producing said sintered body having a density greater than 80% of the theoretical density for silicon carbide.

Claim 10

A process for producing a sintered polycrystalline silicon carbide body which comprises forming a thermoplastically moldable ceramic composition comprising a substantially homogeneous mixture comprising from about 40% by volume to about 60% by volume of a sinterable silicon carbide powder having an average particle size which is submicron and which consists essentially of silicon carbide, a boron additive selected from the group consisting of boron and boron carbide in an amount equivalent to from about 0.3% by weight to about 3% by weight of boron based on said silicon carbide, and an amount of a carbonaceous additive selected from the group consisting of free carbon, a carbonaceous organic material and mixtures thereof equivalent to from about 0.1% by weight to about 5% by weight of free carbon based on said silicon carbide, said carbonaceous organic material completely decomposing at a temperature ranging from 50° C. up to 450° C. to said free carbon and gaseous product of decomposition, and the balance being a thermoplastic organic binder which is thermally removable at a temperature ranging up to 450° C., thermoplastically molding said ceramic composition producing a molded body, embedding said molded body in spherical or nominally spherical embedding particles selected from the group consisting of polycrystalline silicon carbide having a density greater than 80% of the theoretical density for silicon carbide, crystalline and/or amorphous free carbon-coated polycrystalline silicon carbide wherein the free carbon has a density greater than 80% of the theoretical density of graphite and wherein the polycrystalline silicon carbide has a density greater than 80% of the theoretical density for silicon carbide, crystalline and/or amorphous free carbon having a density greater than 80% of the theoretical density of graphite and mixtures thereof, said embedding particles having an average diameter ranging from about 10 microns to about 1000 microns, baking said embedded molded body at a heating rate which has no significant deleterious effect thereon at a temperature ranging up to 450° C. removing said binder leaving no amount therein which would have a significantly deleterious effect on said sintered body, said baking having no significant deleterious effect on said body, recovering the resulting baked body and sintering said baked body at a temperature ranging from about 1900° C. to about 2300° C. producing said sintered body having a density greater than 80% of the theoretical density for silicon carbide.

Claim 11

The process according to claim 8 wherein said molded body is immersed in said embedding powder.

Claim 12

The process according to claim 8 wherein the resulting sintered body with adherent embedding particles is mechanically treated to remove said adherent embedding particles.

Claim 13

The process according to claim 8 wherein the embedding particles are said free carbon-coated polycrystalline silicon carbide or said free carbon and the resulting sintered body with adherent embedding particle is fired in air at a temperature ranging from about 600° C. to about 1500° C. to remove said free carbon.

Claim 14

The method according to claim 8 wherein said embedding particle is said polycrystalline silicon carbide.

Claim 15

The method according to claim 8 wherein said embedding particle is said free carbon-coated polycrystalline silicon carbide.

Claim 16

The method according to claim 8 wherein said embedding particle is free carbon.