Semiconductor pressure transducer

Claim 2

In a semiconductor pressure transducer comprising a single crystal semiconductor chip, wherein a circular cavity is formed in one surface of said chip; a cylindrical tube having one end thereof bonded to said one surface of said chip and surrounding said cavity; and at least one principal stress sensor disposed on the other surface of said chip opposite said cavity; the improvement comprising: at least one auxiliary stress sensor disposed on said other surface of said chip opposite to said one end of said tube; said principal stress sensor and said auxiliary stress sensor being connected in circuit to effectively cancel any zero shift components in the signal generated by said principal stress sensor.

Claim 3

The transducer of claim 1, wherein said sensors are formed of a material having a piezoresistive characteristic.

Claim 4

The transducer of claim 2, wherein said tube is formed of a different material than the material of said chip.

Claim 5

The transducer of claim 3, wherein said tube is formed of pyrex.

Claim 6

In a semiconductor pressure transducer comprising a single crystal semiconductor chip, wherein a circular cavity is formed in one surface of said chip; a cylindrical tube having one end thereof bonded to said one surface of said chip and surrounding said cavity; and at least one principal stress sensor disposed on the other surface of said chip opposite said cavity; the improvement comprising: at least one auxiliary stress sensor disposed on said chip in a region wherein the resistance of said auxiliary sensor depends more on the stresses in said chip in the absence of a pressure difference across said chip than on the stresses induced in said chip as a result of such a pressure difference; said principal stress sensor and said auxiliary stress sensor being connected in circuit to effectively cancel any component generated in the signal provided by said principal sensor which is caused by stresses in said chip in the absence of a pressure difference across said chip.

Claim 7

In a semiconductor pressure transducer comprising a single crystal semiconductor chip, wherein a circular cavity is formed in one surface of said chip; a cylindrical tube having one end thereof bonded to said one surface of said chip and surrounding said cavity; and at least one principal stress sensor disposed on the other surface of said chip opposite said cavity; the improvement comprising: at least one auxiliary stress sensor disposed on said chip in a region wherein the resistance of said auxiliary sensor depends more on the stresses in said chip in the absence of a pressure difference across said chip than on the stresses induced in said chip as a result of such a pressure difference; said principal stress sensor and said auxiliary stress sensor being connected in circuit to effectively cancel any component generated in the signal provided by said principal sensor which is caused by stresses in said chip in the absence of a pressure difference across said chip.

Claim 8

A semiconductor pressure transducer comprising: a single crystal semiconductor chip having a circular cavity formed in one surface thereof, wherein the residual portion of said chip overlying said cavity functions as a pressure sensitive diaphragm; a cylindrical tube having one end thereof bonded to said one surface to surround said cavity; at least one principal stress sensor disposed on the other surface of said chip on the diaphragm portion thereof; and at least one auxiliary sensor disposed on said other surface of said chip opposite to said one end of said tube; said principal stress sensor and said auxiliary stress sensor being connected in circuit to effectively cancel any zero shift components in the signal generated by said principal stress sensor.

Claim 9

A semiconductor pressure transducer comprising: a single crystal semiconductor chip having a circular cavity formed in one surface thereof, wherein the residual portion of said chip overlying said cavity functions as a pressure sensitive diaphragm; a cylindrical tube having one end thereof bonded to said one surface to surround said cavity; at least one principal stress sensor disposed on the other surface of said chip on the diaphragm portion thereof; and at least one auxiliary sensor disposed on said other surface of said chip opposite to said one end of said tube; said principal stress sensor and said auxiliary stress sensor being connected in circuit to effectively cancel any zero shift components in the signal generated by said principal stress sensor.

Claim 10

The transducer of claim 6, comprising a plurality of said principal stress sensors and a plurality of said auxiliary stress sensors.

Claim 11

A semiconductor pressure transducer comprising: a single crystal semiconductor chip having a circular cavity formed in one surface thereof, wherein the residual portion of said chip overlaying said cavity functions as a pressure sensitive diaphragm; a cylindrical tube having one end thereof bonded to said one surface to surround said cavity; a plurality of principal stress sensors disposed on the other surface of said chip on the diaphragm portion thereof;

Claim 12

A semiconductor pressure transducer comprising: a single crystal semiconductor chip having a circular cavity formed in one surface thereof, wherein the residual portion of said chip overlaying said cavity functions as a pressure sensitive diaphragm; a cylindrical tube having one end thereof bonded to said one surface to surround said cavity; a plurality of principal stress sensors disposed on the other surface of said chip on the diaphragm portion thereof;

Claim 13

a plurality of auxiliary stress sensors disposed on said other surface of said chip opposite to said one end of said tube; wherein said principal stress sensors are electrically connected to form a first bridge circuit, and said auxiliary stress sensors are electrically connected to form a second bridge circuit.

Claim 14

a plurality of auxiliary stress sensors disposed on said other surface of said chip opposite to said one end of said tube; wherein said principal stress sensors are electrically connected to form a first bridge circuit, and said auxiliary stress sensors are electrically connected to form a second bridge circuit.