Method for the manufacture of extremely fine structures

Claim 2

Method for the manufacture of extremely fine structures on substrates, which comprises: (a) depositing an insulating layer on a semiconductor substrate; (b) depositing a photoresist layer over the entire surface of the insulating layer and subsequently structuring the photoresist layer forming a photoresist mask with first gaps formed therein in which the insulating layer is exposed; (c) subsequently directionally depositing etch-resistant material forming an etch-resistant material layer on the photoresist mask and forming another etch-resistant material layer on the insulating layer in a portion of the first gaps simultaneously leaving second smaller gaps free of etch-resistant material in which the insulating layer is exposed in shadow regions of the photoresistant mask; (d) etching away the insulating layer in the second gaps which are free of etch-resistant material; (e) subsequently nondirectionally depositing contact material over the entire surface of the etch-resistant material layers and on the semiconductor substrate in the second gaps to at least 1.0 μm thickness forming contacts above the photoresist mask and in the first and second gaps; and (f) subsequently removing the photoresist mask and the contacts disposed thereon with a lifting technique.

Claim 3

Method according to claim 1, which comprises selecting titanium as the etch-resistant material.

Claim 4

Method according to claim 1, which comprises etching away parts of the semiconductor substrate when etching away the insulating layer.

Claim 5

Method according to claim 1, which comprises forming the contacts in the second gaps between 0.1 μm and 1 μm wide.

Claim 6

Method for the manufacture of extremely fine structures on substrates, which comprises: (a) depositing a first titanium layer over the entire surface of a semiconductor substrate; (b) depositing a copper layer over the entire surface of the first titanium layer; (c) depositing a second titanium layer over the entire surface of the copper layer; (d) depositing a photoresist layer over the entire surface of the second titanium layer and subsequently structuring the photoresist layer forming a photoresist mask with first gaps formed therein in which parts of the second titanium layer are exposed; (e) removing the exposed parts of the second titanium layer in the first gaps; (f) subsequently directionally depositing titanium forming a third titanium layer on the photoresist mask and on the copper layer in a portion of the first gaps simultaneously leaving second smaller gaps in which parts of the copper layer are exposed in shadow regions of the photoresist mask; (g) removing the exposed parts of the copper layer and parts of the first titanium layer below in the second gaps extending the second gaps to the semiconductor substrate and leaving parts of the semiconductor substrate exposed; (h) subsequently nondirectionally depositing contact material over the entire surface of the exposed parts of the semiconductor substrate and over the entire surface of the third titanium layer forming contacts in the second gaps and on the third titanium layer to at least 1.0 μm thickness, and (i) subsequently removing the contacts disposed on the third titanium layer, the third titanium layer, the photoreist mask, the second titanium layer and the copper layer.

Claim 7

Method for the manufacture of extremely fine structures on substrates, which comprises: (a) depositing a first titanium layer over the entire surface of a semiconductor substrate; (b) depositing a copper layer over the entire surface of the first titanium layer; (c) depositing a second titanium layer over the entire surface of the copper layer; (d) depositing a photoresist layer over the entire surface of the second titanium layer and subsequently structuring the photoresist layer forming a photoresist mask with first gaps formed therein in which parts of the second titanium layer are exposed; (e) removing the exposed parts of the second titanium layer in the first gaps; (f) subsequently directionally depositing titanium forming a third titanium layer on the photoresist mask and on the copper layer in a portion of the first gaps simultaneously leaving second smaller gaps in which parts of the copper layer are exposed in shadow regions of the photoresist mask; (g) removing the exposed parts of the copper layer and parts of the first titanium layer below in the second gaps extending the second gaps to the semiconductor substrate and leaving parts of the semiconductor substrate exposed; (h) subsequently nondirectionally depositing contact material over the entire surface of the exposed parts of the semiconductor substrate and over the entire surface of the third titanium layer forming contacts in the second gaps and on the third titanium layer to at least 1.0 μm thickness, and (i) subsequently removing the contacts disposed on the third titanium layer, the third titanium layer, the photoreist mask, the second titanium layer and the copper layer.

Claim 8

Method according to claim 5, which comprises simultaneously removing parts of the semiconductor substrate when removing the exposed parts of the copper layer and the first titanium layer below.

Claim 9

Method according to claim 5, which comprises removing the first titanium layer when removing the contacts disposed on the third titanium layer, when removing the third titanium layer, when removing the photo-resist mask, when removing the second titanium layer and when removing the copper layer.

Claim 10

Method according to claim 5, which comprises forming the contacts in the second gaps between 0.1 μm and 1 μm wide.