Photoelectric conversion device and its manufacturing method

Claim 1

A method of making a photoelectric conversion device, comprising the steps of: forming a first conductive layer on a substrate having a insulating surface; subjecting the first conductive layer to first laser beam scanning to form therein (n-1) (where n is an integer larger than 2) sequentially arranged first grooves G 1 to G n-1 and n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction to cover the first grooves G 1 to G n-1 and the first electrodes E 1 to E n so that the regions of the non-single-crystal semiconductor laminate member on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ; subjecting the non-single-crystal semiconductor laminate member to second laser beam scanning to form non-single-crystal semiconductor laminate members Q 1 to Q n second grooves O 1 to O n-1 extending into the first electrodes E 1 to E n-1 , respectively; forming a second conductive layer which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and extends into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 ; and subjecting the second conductive layer to third laser beam scanning to form isolating portion H 1 to H n-1 on the non-single-crystal semiconductor laminate members Q 1 to Q n-1 , respectively, and n sequentially arranged second electrodes F 1 to F n which are isolated by the isolating portions H 1 to H n-1 , respectively, and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j+1 (j=1, 2, . . . (n-1)) being connected to the first electrode E j through the coupling portion K j .

Claim 2

A method of making a photoelectric conversion device, comprising the steps of: forming a first conductive layer on a substrate having a insulating surface; subjecting the first conductive layer to first laser beam scanning to form therein (n-1) (where n is an integer larger than 2) sequentially arranged first grooves G 1 to G n-1 and n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction to cover the first grooves G 1 to G n-1 and the first electrodes E 1 to E n so that the regions of the non-single-crystal semiconductor laminate member on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ; subjecting the non-single-crystal semiconductor laminate member to second laser beam scanning to form non-single-crystal semiconductor laminate members Q 1 to Q n second grooves O 1 to O n-1 extending into the first electrodes E 1 to E n-1 , respectively; forming a second conductive layer which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and extends into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 ; and subjecting the second conductive layer to third laser beam scanning to form isolating portion H 1 to H n-1 on the non-single-crystal semiconductor laminate members Q 1 to Q n-1 , respectively, and n sequentially arranged second electrodes F 1 to F n which are isolated by the isolating portions H 1 to H n-1 , respectively, and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j+1 (j=1, 2, . . . (n-1)) being connected to the first electrode E j through the coupling portion K j .