Semiconductor pressure transducer

Claim 2

A semiconductor pressure transducer comprising: a measuring diaphragm formed of semiconductor material; a support member formed of semiconductor material for supporting said measuring diaphragm; an oxide layer having a high affinity to glass and a thin glass layer interposed between said measuring diaphragm and said support member, said oxide layer enabling said thin glass layer of uniform thickness to be formed, said measuring diaphragm and said support member being joined to each other by anodic bonding through said thin glass layer; a main body on which said support member is mounted; and means located in said main body for applying pressures of fluids to be measured to said measuring diaphragm.

Claim 3

A semiconductor pressure transducer as claimed in claim 1, wherein said oxide layer is located on said support member.

Claim 4

A semiconductor pressure transducer as claimed in claim 2, wherein said thin glass layer is located on said oxide layer.

Claim 5

A semiconductor pressure transducer as claimed in claim 3, wherein said thin glass layer is formed by sputtering.

Claim 6

A semiconductor pressure transducer as claimed in claim 3, wherein said thin glass layer has a thickness below 10 μm.

Claim 7

A semiconductor pressure transducer as claimed in claim 1, wherein said support member and said measuring diaphragm are made of the same semiconductor material.

Claim 8

A semiconductor pressure transducer as claimed in claim 6, wherein said same semiconductor material is silicon.

Claim 9

A semiconductor pressure transducer as claimed in claim 7, wherein the thin glass layer is of a borosilicate glass.

Claim 10

A semiconductor pressure transducer as claimed in claim 1, wherein the oxide layer is located on the measuring diaphragm.

Claim 11

A semiconductor pressure transducer as claimed in claim 1, wherein said oxide layer has a thickness in the range between 0.1 and 1 μm.

Claim 12

A semiconductor pressure transducer comprising: a pressure sensing section main body having introduced thereinto two fluids of different pressures to be measured; a measuring diaphragm of semiconductor material, provided in said pressure sensing section main body, including a large thickness portion, a small thickness portion formed with piezo resistance elements located outside said large thickness portion and a fixed portion of large thickness located outside said small thickness portion; a support member of semiconductor material joined to said fixed portion of said measuring diaphragm through an oxide layer having a high affinity to glass and a thin glass layer by anodic bonding, said oxide layer enabling said thin glass layer of uniform thickness to be achieved; pressure passageways for fluids formed in said support member; and means for applying pressures of said two fluids to be measured to opposite side surfaces of said measuring diaphragm.

Claim 13

A semiconductor pressure transducer comprising: a pressure sensing section main body having introduced thereinto two fluids of different pressures to be measured; a measuring diaphragm of semiconductor material, provided in said pressure sensing section main body, including a large thickness portion, a small thickness portion formed with piezo resistance elements located outside said large thickness portion and a fixed portion of large thickness located outside said small thickness portion; a support member of semiconductor material joined to said fixed portion of said measuring diaphragm through an oxide layer having a high affinity to glass and a thin glass layer by anodic bonding, said oxide layer enabling said thin glass layer of uniform thickness to be achieved; pressure passageways for fluids formed in said support member; and means for applying pressures of said two fluids to be measured to opposite side surfaces of said measuring diaphragm.

Claim 14

A semiconductor pressure transducer as claimed in claim 11, wherein the crystal surface of said measuring diaphragm is a {100} surface and said piezo resistance elements are arranged parallel to a <110> axis.

Claim 15

A semiconductor pressure transducer as claimed in claim 11, further comprising a support member of metal interposed between said support member and said main body.

Claim 16

A semiconductor pressure transducer as claimed in claim 13 wherein said support member of metal is formed of an alloy selected from the group consisting of an Fe-Ni alloy and an Fe-Ni-Co alloy.

Claim 17

A semiconductor pressure transducer comprising: a pressure receiving section main body; two seal diaphragms each located on either side of said pressure receiving section main body for defining a high pressure fluid receiving chamber and a low pressure fluid receiving chamber; a center diaphragm arranged in said pressure receiving section main body to define two separation chambers each communicating with one of said pressure receiving chambers; a measuring diaphragm of semiconductor material formed with piezo resistance elements on one surface thereof and formed with a large thickness central portion, a large thickness outer peripheral portion and a small thickness portion interposed between said central portion and said outer peripheral portion; a support member of semiconductor material having a pressure passageway connected at one end to a peripheral portion of the other surface of said measuring diaphragm by anodic bonding through a thin glass layer and an oxide layer having a high affinity to glass, said oxide layer enabling said thin glass layer of uniform thickness to be obtained; a support member of metal having a pressure passageway connected at one end to the other end of said support member of semiconductor material and communicated with said pressure passageway of said support member of semiconductor material; a pressure sensing section main body connected to the other end of said connecting member of metal; a connecting metal member having a first pressure passageway communicating said the other surface of said measuring diaphragm with one of said pressure receiving chambers through the support members of semiconductor material and metal, and a second pressure passageway communicating said one surface of said measuring diaphragm with the other pressure receiving chamber; and a noncompressive fluid sealed in said pressure receiving chambers, separation chambers and first and second pressure passageways.

Claim 18

A semiconductor pressure transducer comprising: a pressure receiving section main body; two seal diaphragms each located on either side of said pressure receiving section main body for defining a high pressure fluid receiving chamber and a low pressure fluid receiving chamber; a center diaphragm arranged in said pressure receiving section main body to define two separation chambers each communicating with one of said pressure receiving chambers; a measuring diaphragm of semiconductor material formed with piezo resistance elements on one surface thereof and formed with a large thickness central portion, a large thickness outer peripheral portion and a small thickness portion interposed between said central portion and said outer peripheral portion; a support member of semiconductor material having a pressure passageway connected at one end to a peripheral portion of the other surface of said measuring diaphragm by anodic bonding through a thin glass layer and an oxide layer having a high affinity to glass, said oxide layer enabling said thin glass layer of uniform thickness to be obtained; a support member of metal having a pressure passageway connected at one end to the other end of said support member of semiconductor material and communicated with said pressure passageway of said support member of semiconductor material; a pressure sensing section main body connected to the other end of said connecting member of metal; a connecting metal member having a first pressure passageway communicating said the other surface of said measuring diaphragm with one of said pressure receiving chambers through the support members of semiconductor material and metal, and a second pressure passageway communicating said one surface of said measuring diaphragm with the other pressure receiving chamber; and a noncompressive fluid sealed in said pressure receiving chambers, separation chambers and first and second pressure passageways.

Claim 19

A semiconductor pressure transducer comprising: a measuring diaphragm of semiconductor material; a support member of semiconductor material cooperating with said measuring diaphragm to define measuring chambers therebetween; an oxide layer having a high affinity to glass and a thin glass layer interposed between said measuring diaphragm and support member, said support member being joined to said measuring diaphragm by anodic bonding, said oxide layer enabling said thin glass layer of uniform thickness to be obtained; a main body having said support member mounted thereon; pressure passageways formed in said main body for leading fluids to be measured to said measuring chambers; and means for sensing changes in electrostatic capacity between said measuring diaphragm and said support member.

Claim 20

A semiconductor pressure transducer comprising: a measuring diaphragm of semiconductor material; a support member of semiconductor material cooperating with said measuring diaphragm to define measuring chambers therebetween; an oxide layer having a high affinity to glass and a thin glass layer interposed between said measuring diaphragm and support member, said support member being joined to said measuring diaphragm by anodic bonding, said oxide layer enabling said thin glass layer of uniform thickness to be obtained; a main body having said support member mounted thereon; pressure passageways formed in said main body for leading fluids to be measured to said measuring chambers; and means for sensing changes in electrostatic capacity between said measuring diaphragm and said support member.