Foam semiconductor dopant carriers

Claim 2

A dopant source comprising a dopant carrier comprising heat-bonded particulated refractory material interconnectingly arranged in an open cellular foam wherein the refractory material is selected from at least one of AlAsO 4 , YAsO 4 , Mg 6 As 2 O 11 , Mg 3 As 2 O 8 , Ca 6 As 2 O 11 , Ca 3 As 2 O 8 , Ba 6 As 2 O 11 , Ba 3 As 2 O 8 , Sr 6 As 2 O 11 and Sr 3 As 2 O 8 .

Claim 3

A dopant source consisting essentially of: a. A rigid carrier resistant to structural deformation at a temperature between 500° C. and 1400° C. consisting essentially of a wafer of heat-bonded particulated non-oxide refractory material interconnectingly arranged in an open cellular foam, said refractory material selected from the group consisting of tungsten, tantalum, molybdenum, niobium, chromium, zirconium, vanadium, titanium, boron, carbon, tungsten/tantalum binary alloys, tungsten/niobium binary alloys, tungsten/molybdenum binary alloys, tungsten/chromium binary alloys, molybdenum/chromium binary alloys, molybdenum/titanium binary alloys, molybdenum/zirconium binary alloys, AlB 12 , Ti 2 B, TiB 2 , ZrB 2 , HfB 2 , Nb 3 B 2 , NbB, Nb 3 B 4 , NbB 2 , Ta 2 B, TaB, TaB 4 , TaB 2 , Cr 2 B, Cr 5 B 3 , CrB, Cr 3 B 4 , CrB 2 , CrB 4 , Mo 2 B, Mo 3 B 2 , MoB, MoB 2 , MoB 5 , MoB 12 , W 2 B, WB, W 2 B 5 , WB 12 , Mn 4 B, Mn 2 B, MnB, Mn 3 B 4 , MnB 2 , MnB 4 , Ni 4 B 3 , NIB, NbC, Nb 2 C, TiC, ZnC, HfC, V 2 C, VC, Ta 2 C, TaC, Cr 23 C 6 , Cr 7 C 3 , Cr 3 C 2 , Mo 2 C, MoC, W 2 C, WC, Fe 3 C, B 4 C, B 13 C 2 , SiC, Si 3 N 4 , TiN, ZiN, HfN, VN, NbN, TaN, AlN, BN, NbP, Ti 3 P, Ti 2 P, Cr 3 P, BP, CoP 2 , Ti 5 Si 3 , Ti 5 Si 4 , TiSi, TiSi 2 , Zr 4 Si, Zr 2 Si, Zr 5 Si 3 , Zr 4 Si 3 , Zr 6 Si 5 , ZrSi, ZrSi 2 , Hf 2 Si, Hf 5 Si 3 , Hf 3 Si 3 , HfSi, HfSi 2 , MoSi 2 , V 3 Si, V 5 Si 3 , V 5 Si 4 , VSi 2 , Nb 4 Si, Nb 5 Si 3 , NbSi 2 , Ta 9 Si 2 , Ta 2 Si 3 , Ta 5 Si, TaSi 2 , Ti-Zr-C ternary alloys, Ti-Hf-C ternary alloys, Ti-V-C ternary alloys, Ti-Nb-C ternary alloys, Ti-Ta-C ternary alloys, Ti-Mo-B ternary alloys, Zr-Hf-B ternary alloys, Zr-Ta-B ternary alloys, Hf-Ta-B ternary alloys, V-Nb-B ternary alloys, Nb-Ta-Si ternary alloys, Nb-Mo-Si ternary alloys, Nb-W-Si ternary alloys, Ta-Mo-Si ternary alloys and Ta-W-Si ternary alloys; and b. A dopant compound selected from at least one of AlAsO 4 , YAsO 4 , Mg 6 As 2 O 11 , Mg 3 As 2 O 8 , Ca 6 As 2 O 11 , Ca 3 As 2 O 8 , Ba 6 As 2 O 11 , Ba 3 As 2 O 8 , Sr 6 As 2 O 11 and Sr 3 As 2 O 8 .

Claim 4

A dopant source consisting essentially of: a. A rigid carrier resistant to structural deformation at a temperature between 500° C. and 1400° C. consisting essentially of a wafer of heat-bonded particulated non-oxide refractory material interconnectingly arranged in an open cellular foam, said refractory material selected from the group consisting of tungsten, tantalum, molybdenum, niobium, chromium, zirconium, vanadium, titanium, boron, carbon, tungsten/tantalum binary alloys, tungsten/niobium binary alloys, tungsten/molybdenum binary alloys, tungsten/chromium binary alloys, molybdenum/chromium binary alloys, molybdenum/titanium binary alloys, molybdenum/zirconium binary alloys, AlB 12 , Ti 2 B, TiB 2 , ZrB 2 , HfB 2 , Nb 3 B 2 , NbB, Nb 3 B 4 , NbB 2 , Ta 2 B, TaB, TaB 4 , TaB 2 , Cr 2 B, Cr 5 B 3 , CrB, Cr 3 B 4 , CrB 2 , CrB 4 , Mo 2 B, Mo 3 B 2 , MoB, MoB 2 , MoB 5 , MoB 12 , W 2 B, WB, W 2 B 5 , WB 12 , Mn 4 B, Mn 2 B, MnB, Mn 3 B 4 , MnB 2 , MnB 4 , Ni 4 B 3 , NIB, NbC, Nb 2 C, TiC, ZnC, HfC, V 2 C, VC, Ta 2 C, TaC, Cr 23 C 6 , Cr 7 C 3 , Cr 3 C 2 , Mo 2 C, MoC, W 2 C, WC, Fe 3 C, B 4 C, B 13 C 2 , SiC, Si 3 N 4 , TiN, ZiN, HfN, VN, NbN, TaN, AlN, BN, NbP, Ti 3 P, Ti 2 P, Cr 3 P, BP, CoP 2 , Ti 5 Si 3 , Ti 5 Si 4 , TiSi, TiSi 2 , Zr 4 Si, Zr 2 Si, Zr 5 Si 3 , Zr 4 Si 3 , Zr 6 Si 5 , ZrSi, ZrSi 2 , Hf 2 Si, Hf 5 Si 3 , Hf 3 Si 3 , HfSi, HfSi 2 , MoSi 2 , V 3 Si, V 5 Si 3 , V 5 Si 4 , VSi 2 , Nb 4 Si, Nb 5 Si 3 , NbSi 2 , Ta 9 Si 2 , Ta 2 Si 3 , Ta 5 Si, TaSi 2 , Ti-Zr-C ternary alloys, Ti-Hf-C ternary alloys, Ti-V-C ternary alloys, Ti-Nb-C ternary alloys, Ti-Ta-C ternary alloys, Ti-Mo-B ternary alloys, Zr-Hf-B ternary alloys, Zr-Ta-B ternary alloys, Hf-Ta-B ternary alloys, V-Nb-B ternary alloys, Nb-Ta-Si ternary alloys, Nb-Mo-Si ternary alloys, Nb-W-Si ternary alloys, Ta-Mo-Si ternary alloys and Ta-W-Si ternary alloys; and b. A dopant compound selected from at least one of AlAsO 4 , YAsO 4 , Mg 6 As 2 O 11 , Mg 3 As 2 O 8 , Ca 6 As 2 O 11 , Ca 3 As 2 O 8 , Ba 6 As 2 O 11 , Ba 3 As 2 O 8 , Sr 6 As 2 O 11 and Sr 3 As 2 O 8 .