Patent US4524374A successfully refreshed from Google Patents.
US4524374A
Expired / Lapsed
US
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Device for detecting infrared rays
Assignee: Mitsubishi Electric Corp
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Filing: 1981-07-20
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Granted: 1985-06-18
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Expires: 2001-07-20
Abstract
Abstract A device for detecting infrared rays and a method for manufacturing the same having an improved sensitivity in the infrared range. A first region of a second conductivity type is formed on a substrate of a first conductivity type by diffusion or ion-implantation. Second and third regions of the same conductivity type as the substrate are formed in the first region and the substrate by diffusion or ion-implantation. A metal such as platinum, gold or palladium is evaporated onto an exposed part of the first region by sputtering. The metal layer thus deposited is annealed to form a Schottky contact.
Inventors
- 👤 Masahiko Denda
- 👤 Natsuro Tsubouchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:40
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
111 words
A device for detecting infrared rays comprising: a first conductivity type semiconductor substrate; a first region of a second conductivity type formed on said substrate; a metal material formed on said first region to form a Schottky junction between said metal material and said first region; a second region of said first conductivity type formed on said first region to form a P-N junction between said first and second regions; bias means for reverse biasing said Schottky junction and thereby forward biasing said P-N junction upon infrared irradiation of said Schottky junction; and output means for producing an output from said substrate upon irradiation of said Schottky junction with infrared rays.
Claim 2
Independent Claim
111 words
A device for detecting infrared rays comprising: a first conductivity type semiconductor substrate; a first region of a second conductivity type formed on said substrate; a metal material formed on said first region to form a Schottky junction between said metal material and said first region; a second region of said first conductivity type formed on said first region to form a P-N junction between said first and second regions; bias means for reverse biasing said Schottky junction and thereby forward biasing said P-N junction upon infrared irradiation of said Schottky junction; and output means for producing an output from said substrate upon irradiation of said Schottky junction with infrared rays.
Claim 3
Dependent Claim
20 words
The device for detecting infrared rays of claim 1 wherein said Schottky junction comprises an annealed layer of platinum silicide.
Claim 4
Dependent Claim
19 words
The device for detecting infrared rays of claim 1 further comprising a guard layer formed around said Schottky junction.
Claim 5
Dependent Claim
29 words
A device for detecting infrared rays as claimed in claim 1, wherein said bias means comprises means for applying a potential between said metal material and said second region.
Claim 6
Dependent Claim
27 words
A device for detecting infrared rays as claimed in claim 1, wherein said metal material contacts only said first region without contacting said substrate or second region.
References Cited (Backward Citations)
US4015283A
Cited
US3971057A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-17 | 1988-12-17 | 1989-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-17 | 1992-12-17 | 1993-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-17 | 1996-12-17 | 1997-06-18 | $7700.00 | Window Closed / Lapsed |