US4524126A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Adhesion of a photoresist to a substrate
Assignee: International Business Machines Corp
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Filing: 1984-12-07
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Granted: 1985-06-18
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Expires: 2004-12-07
Abstract
Abstract A process for improving the adhesion of a photoresist to a substrate by applying a layer of titanium, zirconium, hafnium and/or oxide thereof between the photoresist and substrate.
Inventors
- 👤 John C. Marinace
- 👤 Ralph C. McGibbon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/11; H10P14/6322; H10P14/65; H10P14/6502; H10P14/6506; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69392; H10P14/69394; H10P14/69395
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
105 words
A process for fabricating a semiconductor device which comprises: providing a layer about 10 to 3,000 Å thick selected from the group of zirconium, oxide thereof, oxide of titanium, oxide of hafnium, or a mixture thereof onto a surface selected from the group of gallium arsenide, silicon, polycrystalline silicon, glass, silicon dioxide, and silicon nitride; providing a photoresist on said layer; said layer enhancing the adhesion of said photoresist to said surface; wherein said photoresist is a positive photoresist material based on a formaldehyde novolak resin and a diazoketone; exposing said photoresist to desired image; developing the desired image by removing photoresist and said layer.
Claim 2
Dependent Claim
105 words
A process for fabricating a semiconductor device which comprises: providing a layer about 10 to 3,000 Å thick selected from the group of zirconium, oxide thereof, oxide of titanium, oxide of hafnium, or a mixture thereof onto a surface selected from the group of gallium arsenide, silicon, polycrystalline silicon, glass, silicon dioxide, and silicon nitride; providing a photoresist on said layer; said layer enhancing the adhesion of said photoresist to said surface; wherein said photoresist is a positive photoresist material based on a formaldehyde novolak resin and a diazoketone; exposing said photoresist to desired image; developing the desired image by removing photoresist and said layer.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein said layer is selected from the group of titanium oxides, zirconium oxides, or mixtures thereof.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said layer is an oxide of titanium.
Claim 5
Dependent Claim
20 words
The process of claim 1 which is carried out under relatively high humidity of about 40% relative humidity or above.
Claim 6
Dependent Claim
18 words
The process of claim 3 wherein the oxide of titanium is applied by hydrolysis of TiCl 4 .
Claim 7
Dependent Claim
12 words
The process of claim 1 wherein said substrate is a semiconductor substrate.
Claim 8
Dependent Claim
10 words
The process of claim 1 wherein said substrate contains silicon.
Claim 9
Dependent Claim
11 words
The process of claim 1 wherein the substrate is silicon dioxide.
Claim 10
Dependent Claim
11 words
The process of claim 1 wherein said substrate is silicon nitride.
Claim 11
Dependent Claim
11 words
The process of claim 1 wherein said substrate is gallium arsenide.
Claim 12
Dependent Claim
10 words
The process of claim 1 wherein said substrate is glass.
Claim 13
Dependent Claim
26 words
The process of claim 1 wherein titanium dioxide is applied to the substrate which is at a temperature of about room temperature to about 300° C.
Claim 14
Dependent Claim
27 words
The process of claim 1 wherein the substrate during the application of the adhesion layer is at a temperature of about room temperature to about 100° C.
Claim 15
Dependent Claim
15 words
The process of claim 1 wherein the thickness of said layer is about 25 Å.
Claim 16
Dependent Claim
16 words
The process of claim 1 wherein all of said layer is removed subsequent to the exposing.
Claim 17
Dependent Claim
19 words
The process of claim 1 wherein said layer is an oxide of titanium; and said substrate is silicon-containing substrate.
Claim 18
Dependent Claim
11 words
The process of claim 16 wherein said substrate is silicon dioxide.
Claim 19
Dependent Claim
15 words
The process of claim 16 wherein the thickness of said layer is about 25 Å.
Claim 20
Dependent Claim
19 words
The process of claim 15 wherein said layer is an oxide of titanium; and said substrate is silicon-containing substrate.
Claim 21
Dependent Claim
18 words
The process of claim 1 wherein the thickness of the photoresist is about 1 to about 2 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-17 | 1988-12-17 | 1989-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-17 | 1992-12-17 | 1993-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-17 | 1996-12-17 | 1997-06-18 | $7700.00 | Window Closed / Lapsed |