Patent US1909557A successfully refreshed from Google Patents.
US4523318A
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Semiconductor laser having high manufacturing yield
Assignee: RCA Corp
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Filing: 1982-10-29
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Granted: 1985-06-11
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Expires: 2002-10-29
Abstract
Abstract A semiconductor laser wherein the major surface of a substrate having a pair of channels therein is misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2° and 1.5°. The misorientation angle of the substrate surface with respect to the axis of the channels is between about 5° and 45°.
Inventors
- 👤 John C. Connolly
- 👤 Dan Botez
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
110 words
In a laser comprising a body of semiconductor material, said body including a substrate having a pair of channels in a first major surface thereof with a mesa therebetween, a first confinement layer overlying the first major surface, the mesa and partially filling the channels; a light propagation region, comprising an active layer, overlying the first confinement layer; and a second confinement layer overlying the light propagation region: the improvement which comprises the first major surface of the substrate being misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2° and 1.5° with a misorientation angle of between about 5° and 45°.
Claim 2
Dependent Claim
110 words
In a laser comprising a body of semiconductor material, said body including a substrate having a pair of channels in a first major surface thereof with a mesa therebetween, a first confinement layer overlying the first major surface, the mesa and partially filling the channels; a light propagation region, comprising an active layer, overlying the first confinement layer; and a second confinement layer overlying the light propagation region: the improvement which comprises the first major surface of the substrate being misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2° and 1.5° with a misorientation angle of between about 5° and 45°.
Claim 3
Dependent Claim
25 words
The laser of claim 1 wherein the tilt angle is between about 0.3° and 0.7° and the misorientation angle is between about 5° and 25°.
Claim 4
Dependent Claim
19 words
The laser of claim 2 wherein the tilt angle is about 0.5° and the misorientation angle is about 20°.
Claim 5
Dependent Claim
25 words
The laser of claim 1 wherein the tilt angle is between about 0.8° and 1.2° and the misorientation angle is between about 25° and 45°.
Claim 6
Dependent Claim
19 words
The laser of claim 4 wherein the tilt angle is about 1° and the misorientation angle is about 35°.
Claim 7
Dependent Claim
20 words
The laser of claim 1 wherein the light propagation region further comprises a guide layer adjacent to the active layer.
Claim 8
Dependent Claim
22 words
The laser of claim 6 wherein the guide layer overlies the first confinement layer and the active layer overlies the guide layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-10 | 1988-12-10 | 1989-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-10 | 1992-12-10 | 1993-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-10 | 1996-12-10 | 1997-06-11 | $7700.00 | Window Closed / Lapsed |