Method of reduction of a compound forming a layer on a substrate and the application of said method to the fabrication of a field-effect semiconducting structure

Claim 3

A method according to claim 1 wherein, during the first step, the material constituting the solid electrolyte is uniformly deposited on the surface of the substrate by cathodic sputtering in order to form said layer of solid electrolyte.

Claim 4

A method according to claim 1 wherein, during the second step, the substrate covered with at least one layer of oxidized compound is exposed through said solid electrolyte layer to a reducing plasma.

Claim 5

A method according to claim 3, wherein the reducing plasma is a radio-frequency hydrogen plasma.

Claim 6

A method according to claim 1, wherein said predetermined species is oxygen.

Claim 7

A method according to claim 5, wherein the substrate is of gallium arsenide and the compound to be reduced comprises gallium and arsenic oxides.

Claim 8

A method according to claim 6, wherein the gas mixture is heated to a temperature of 500° C. and comprises hydrogen and water vapor in a proportion equal to 0.5 p.p.m. in order to produce a partial pressure of oxygen equal to 10 -35 Pa.

Claim 9

A method according to claim 5, wherein the solid electrolyte layer is of zirconia stabilized by calcium oxide in respective atomic proportions of 85% and 15% and the thickness of the layer is within the range of 1000 Angstroms to 2500 Angstroms.

Claim 10

A method according to claim 5, wherein the compound to be reduced consists of material which is different from the material constituting said substrate.

Claim 11

A method according to claim 9 wherein, during the second step, the substrate covered with at least one layer of oxidized compound containing said species is exposed through said solid electrolyte layer to a reducing atmosphere composed of a gas mixture which comprises at least said predetermined chemical species, and satisfies simultaneously the following relations: P.sub.R >P.sub.esp >P.sub.O ; T.sub.R >T>T.sub.O ; T.sub.D >T; where: P R and T R are respectively the maximum partial pressure of the predetermined species and the maximum temperature at which reduction of each oxidized compound takes place; P esp and T are respectively the partial pressure of the predetermined species in said gas mixture and the temperature of said mixture; P O and T O are respectively the minimum partial pressure of the predetermined species and the minimum temperature at which oxidation of the electrolyte layer takes place; T D is the lowest temperature of destruction of at least one oxidized compound.

Claim 12

A method according to claim 5, wherein the substrate is of gallium arsenide and the compound to be reduced comprises a first layer of oxides of gallium and arsenic and a second surface layer of oxides of material which is different from the substrate material.

Claim 13

A method according to claim 11, wherein the second surface layer consists of oxides of gallium antimonide.

Claim 14

A method according to claim 5, wherein the compound to be reduced comprises a metal oxide.

Claim 15

A method according to claim 13, wherein the metal oxide covers the surface of the substrate in a uniform manner.

Claim 16

A method according to claim 13, wherein the metal oxide is constituted by an interconnection network which covers predetermined regions of the substrate surface.

Claim 17

A method according to claim 1, wherein said predetermined species is nitrogen.

Claim 18

A method according to claim 16, wherein the compound to be reduced is silicon nitride and the solid electrolyte is ammonium β-alumina.

Claim 19

A method of fabrication of a field-effect semiconducting structure of the MIS type comprising the steps of the method of reduction according to claim 1, including an additional step carried out after the second step of the method of reduction and consisting in deposition of a metal zone which covers predetermined regions of the surface of the solid electrolyte layer in order to form a stack of at least one layer of reduced semiconductor, a dielectric layer formed by the solid electrolyte layer and a metal layer, said stack constituting the MIS structure.