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US4520381A
Expired / Lapsed
US
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Polychromatic image sensor
Assignee: Fujifilm Business Innovation Corp
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Filing: 1983-01-05
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Granted: 1985-05-28
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Expires: 2003-01-05
Abstract
Abstract A polychromatic image sensor having a semiconductor for converting an optical signal into an electrical signal, in which the sensor is provided with at least two PN-junctions of which the depth from a light incident plane varies continuously. A plurality of sensors may be arranged into a sensor array.
Inventors
- 👤 Haruhiko Moriguchi
- 👤 Masami Kurata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:31
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/182; H10F30/00; H10F30/20; H10F30/21; H10F30/26
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
84 words
A polychromatic semiconductor image sensor for converting an optical signal into an electrical signal comprising a light incident surface, a region of a first semiconductor type formed below said light incident surface and positioned away from the direction in which light becomes incident on said light incident surface, a plurality of second regions of a second semiconductor type adjoining said first region to define at least two PN-junctions with the depth of the PN-junctions from said light incident surface continuously varying, and output electrodes.
Claim 2
Dependent Claim
84 words
A polychromatic semiconductor image sensor for converting an optical signal into an electrical signal comprising a light incident surface, a region of a first semiconductor type formed below said light incident surface and positioned away from the direction in which light becomes incident on said light incident surface, a plurality of second regions of a second semiconductor type adjoining said first region to define at least two PN-junctions with the depth of the PN-junctions from said light incident surface continuously varying, and output electrodes.
Claim 3
Dependent Claim
20 words
The polychromatic semiconductor image sensor or claim 1, further comprising a silicon dioxide film disposed on said light incident surface.
Claim 4
Dependent Claim
33 words
The polychromatic semiconductor image sensor of claim 1, wherein said PN-junctions are disposed on a straight line between said first region and said plurality of second regions and said depth continuously linearly varies.
Claim 5
Dependent Claim
20 words
The polychromatic semiconductor image sensor of claim 1, wherein said plurality of second regions are spaced apart from each other.
Claim 6
Dependent Claim
33 words
The polychromatic semiconductor image sensor of claim 1, wherein said PN-junctions are disposed on an arcuate surface between said first region and said plurality of second regions and said depth continuously non-linearly varies.
Claim 7
Dependent Claim
40 words
The polychromatic semiconductor image sensor of claim 1, further comprising processing circuit means coupled to said output electrodes for producing first outputs indicative of light intensity across said sensor and a second output indicative of the color of incident light.
References Cited (Backward Citations)
US4379636A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-27 | 1988-11-26 | 1989-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-27 | 1992-11-26 | 1993-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-27 | 1996-11-26 | 1997-05-28 | $7700.00 | Window Closed / Lapsed |