Process for the thermo-migration of liquid phases

Claim 2

A process for the thermo-migration of liquid phases comprising the steps of: covering at least partially a plane surface of a semiconducting substrate with a layer of metal, the melting point of said metal being substantially lower than the melting point of said semiconducting substrate; forming a molten zone from said metal and the material of said semiconducting substrate at a temperature lying between said two melting points, and in an inert gas atmosphere; pumping off said inert gas atmosphere after said formation of said molten zone; establishing a first thermal gradient essentially perpendicular to said plane surface of said semiconducting substrate by means of two flat, parallel and uniformly heated faces; migrating said molten zone into said semiconducting substrate under vacuum conditions until it reaches a predetermined depth; establishing a second thermal gradient which is parallel to said first thermal gradient and has an opposite direction by lowering the temperature of the warmer of said two faces and raising the temperature of the cooler of said two faces; and migrating said molten zone from said predetermined depth back to said plane surface of said semiconducting substrate under vacuum conditions.

Claim 3

A process according to claim 1, wherein said semiconducting substrate is a silicon substrate and wherein said metal is aluminum.

Claim 4

A process according to claim 2, further comprising the step of: evaporating the remaining metal from said plane surface of said semiconducting substrate at an elevated temperature after said molten zone has been migrated back to said plane surface of said semiconducting substrate.

Claim 5

A process according to claim 2, further comprising the steps of: depositing said aluminum metal layer by means of vapor deposition with a thickness of approximately 3 μm and forming a predetermined pattern from said deposited metal layer by means of a photolithographic treatment.

Claim 6

A process according to claim 2, wherein said inert gas atmosphere is a nitrogen atmosphere with a pressure of 400-600 mm Hg, wherein the vacuum conditions comprise a pressure lower than 1×10 -5 mm Hg, and wherein heat transport between said flat faces and said semiconducting substrate is solely effected by thermal radiation.

Claim 7

A process according to claim 5, wherein a clearance of 5-15 mm is maintained between said semiconducting substrate and said flat faces by means of quartz spacers.

Claim 8

A process according to claim 2, further comprising the steps of: measuring and monitoring the temperatures in a pyrometric technique by means of a photodiode and maintaining the temperature of the warmer of said two faces at approximately 1540° C. during said migration steps.

Claim 9

A process according to claim 1, further comprising the step of: maintaining the temperature of the cooler of said two flat faces above the solidification temperature of said molten zone between said two migration steps.

Claim 10

A process according to claim 1, wherein said flat heated faces are surfaces of respective resistance heaters which are composed of pyrolyzed electrographite and designed in the form of slotted plates with a thickness of approximately 6 mm, said slotted plates being connected to a power supply by copper leads.

Claim 11

A process according to claim 1, wherein said flat heated faces are surfaces of respective graphite plates placed on resistance heaters which are composed of a sheet of graphite with a thickness of approximately 0.2 mm.

Claim 12

A process for thermo-migrating a doping metal into a semiconducting substrate, said process comprising the steps of: (a) at least partially covering a plane surface of a semiconducting substrate with a metal which, when heated, forms a solid alloy doping zone with the semiconductor substrate, the melting point of said metal being substantially lower than the melting point of said semiconductor substrate; (b) placing said semiconductor substrate in a space between two flat, parallel faces such that the plane surface of said semiconductor substrate is parallel to said two flat, parallel faces; (c) introducing an inert gas atmosphere into the space between said two flat, parallel faces; (d) heating said two flat, parallel faces to different temperatures, thereby creating a first temperature gradient which is perpendicular to the plane surface of said semiconductor substrate between said two flat, parallel faces, the temperature of said two flat, parallel faces being chosen such that said metal begins to melt, forming a molten zone which starts to migrate into said semiconductor substrate; (e) shortly after said molten zone has begun to migrate into said semiconductor substrate, pumping out the inert atmosphere in the space between said two flat, parallel faces, thereby subjecting said semiconductor substrate to a vacuum; then (f) allowing said molten zone to migrate into said semiconductor substrate under vacuum conditions until it reaches a predetermined depth; then (g) establishing a second thermal gradient between said two flat, parallel faces which is parallel to the first thermal gradient but which has an opposite direction by lowering the temperature of the warmer of said two flat, parallel faces and raising the temperature of the cooler of said two flat, parallel faces; and then (h) allowing said molten zone to migrate from said predetermined depth back to the plane surface of said semiconductor substrate.

Claim 13

A process for thermo-migrating a doping metal into a semiconducting substrate, said process comprising the steps of: (a) at least partially covering a plane surface of a semiconducting substrate with a metal which, when heated, forms a solid alloy doping zone with the semiconductor substrate, the melting point of said metal being substantially lower than the melting point of said semiconductor substrate; (b) placing said semiconductor substrate in a space between two flat, parallel faces such that the plane surface of said semiconductor substrate is parallel to said two flat, parallel faces; (c) introducing an inert gas atmosphere into the space between said two flat, parallel faces; (d) heating said two flat, parallel faces to different temperatures, thereby creating a first temperature gradient which is perpendicular to the plane surface of said semiconductor substrate between said two flat, parallel faces, the temperature of said two flat, parallel faces being chosen such that said metal begins to melt, forming a molten zone which starts to migrate into said semiconductor substrate; (e) shortly after said molten zone has begun to migrate into said semiconductor substrate, pumping out the inert atmosphere in the space between said two flat, parallel faces, thereby subjecting said semiconductor substrate to a vacuum; then (f) allowing said molten zone to migrate into said semiconductor substrate under vacuum conditions until it reaches a predetermined depth; then (g) establishing a second thermal gradient between said two flat, parallel faces which is parallel to the first thermal gradient but which has an opposite direction by lowering the temperature of the warmer of said two flat, parallel faces and raising the temperature of the cooler of said two flat, parallel faces; and then (h) allowing said molten zone to migrate from said predetermined depth back to the plane surface of said semiconductor substrate.