Stripper for radiosensitive resist

Claim 2

A stripper for a radiosensitive resist formed of a fluoroalkyl alpha-haloacrylate polymer, said stripper consisting essentially of a substantially non-aqueous polar solvent of dimethyl sulfoxide, and 0.1 to 40 weight percent of at least one compound selected from the group consisting of alkali metal alkoxides and tetraalkylammonium hydroxides, said stripper further characterized as being used with a post-stripping water rinse and useful at room temperature.

Claim 3

The stripper of claim 1, wherein said compound is an alkali metal alkoxide.

Claim 4

The stripper of claim 2, wherein said alkali metal alkoxide is a sodium lower alkoxide or a potassium lower alkoxide.

Claim 5

The stripper of claim 1, wherein said compound is a tetraalkylammonium hydroxide.

Claim 6

The stripper of claim 4, wherein said tetraalkylammonium hydroxide is a tetraloweralkylammonium hydroxide.

Claim 7

A stripper for a radiosensitive resist formed of a fluoroalkyl alpha-haloacrylate polymer, said stripper consisting essentially of a substantially non-aqueous polar solvent mixture of dimethyl sulfoxide and a lower alcohol, and 0.1 to 40 weight percent of at least one compound selected from the group consisting of alkali metal alkoxides, alkali metal hydroxides and tetraalkylammonium hydroxides, said stripper further characterized as being used with a post-stripping water rinse and useful at room temperature.

Claim 8

A stripper for a radiosensitive resist formed of a fluoroalkyl alpha-haloacrylate polymer, said stripper consisting essentially of a substantially non-aqueous polar solvent mixture of dimethyl sulfoxide and a lower alcohol, and 0.1 to 40 weight percent of at least one compound selected from the group consisting of alkali metal alkoxides, alkali metal hydroxides and tetraalkylammonium hydroxides, said stripper further characterized as being used with a post-stripping water rinse and useful at room temperature.

Claim 9

The stripper of claim 6 wherein said alkali metal alkoxide is a sodium lower alkoxide or a potassium lower alkoxide.

Claim 10

The stripper of claim 6 wherein said tetraalkylammonium hydroxide is tetraloweralkylammonium hydroxide.

Claim 11

The stripper of claim 6, wherein said compound is an alkali metal hydroxide.

Claim 12

The stripper of claim 9, wherein said alkali metal hydroxide is lithium hydroxide, sodium hydroxide, or potassium hydroxide.

Claim 13

A process of stripping a radiosensitive resist formed of a fluoroalkyl α-haloacrylate polymer, which process comprises contacting a substrate having said radiosensitive resist formed thereon with a solution at room temperature, said solution containing 0.1 to 40 weight percent of at least one compound selected from the group consisting of alkali metal alkoxides and tetraalkylammonium hydroxides in a substantially non-aqueous polar solvent of dimethyl sulfoxide, and subsequently washing said stripped substrate with water.

Claim 14

A process of stripping a radiosensitive resist formed of a fluoroalkyl α-haloacrylate polymer, which process comprises contacting a substrate having said radiosensitive resist formed thereon with a solution at room temperature, said solution containing 0.1 to 40 weight percent of at least one compound selected from the group consisting of alkali metal alkoxides and tetraalkylammonium hydroxides in a substantially non-aqueous polar solvent of dimethyl sulfoxide, and subsequently washing said stripped substrate with water.

Claim 15

The process of claim 11, wherein said substrate is pretreated with an organic solvent capable of dissolving said resist.

Claim 16

The process of claim 11 wherein said alkali metal alkoxide is a sodium lower alkoxide or a potassium lower alkoxide.

Claim 17

The process of claim 11 wherein said tetraalkylammonium hydroxide is a tetraloweralkylammonium hydroxide.

Claim 18

The process of claim 11 wherein said substantially non-aqueous polar solvent of dimethyl sulfoxide contains not more than 10 weight percent of water.

Claim 19

A process for stripping a radiosensitive resist formed of a fluoroalkyl alpha-haloacrylate polymer which process comprises contacting a susbstrate having said radiosensitive resist formed thereon with a solution at room temperature, said solution containing 0.1 to 40 percent of at least one compound selected from the group consisting of alkali metal alkoxides, alkali metal hydroxides and tetraalkylammonium hydroxides in a substantially non-aqueous polar solvent mixture of dimethylsulfoxide and a lower alcohol, and subsequently washing said stripped substrate with water.

Claim 20

A process for stripping a radiosensitive resist formed of a fluoroalkyl alpha-haloacrylate polymer which process comprises contacting a susbstrate having said radiosensitive resist formed thereon with a solution at room temperature, said solution containing 0.1 to 40 percent of at least one compound selected from the group consisting of alkali metal alkoxides, alkali metal hydroxides and tetraalkylammonium hydroxides in a substantially non-aqueous polar solvent mixture of dimethylsulfoxide and a lower alcohol, and subsequently washing said stripped substrate with water.

Claim 21

The process of claim 16 wherein said substrate is pretreated with an organic solvent capable of dissolving said resist.

Claim 22

The process of claim 16 wherein said alkali metal alkoxide is a sodium lower alkoxide or a potassium lower alkoxide.

Claim 23

The process of claim 16 wherein said alkali metal hydroxide is lithium hydroxide, sodium hydroxide or potassium hydroxide.

Claim 24

The process of claim 16 wherein said tetraalkylammonium hydroxide is a tetraloweralkylammonium hydroxide.

Claim 25

The process of claim 16 wherein said substantially non-aqueous polar solvent mixture of dimethyl sulfoxide and a lower alcohol contains not more than 10 weight percent of water.