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Process for preparing silicon nitride powder

Assignee: Coorstek KK
•
Filing: 1984-06-08
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Granted: 1985-04-30
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Expires: 2004-06-08
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Abstract

Abstract Disclosed is a process for preparing silicon nitride powder, which comprises baking a powdery mixture comprising (i) 1 part by weight of silica powder, or a silica-containing substance in terms of silica, (ii) 0.4 to 4 parts by weight of carbon powder, or a substance generating carbon by baking, in terms of carbon and (iii) 0.005 to 1 part by weight of silicon nitride powder synthesized by a silica reduction method, at a temperature of from 1350° to 1550° C. in a non-oxidative atmosphere containing nitrogen.

Inventors

  • 👤 Hiroshi Inoue
  • 👤 Katsutoshi Komeya
  • 👤 Akihiko Tsuge
  • 👤 Kazunari Koide
  • 👤 Masaaki Mori
  • 👤 Tetsuro Urakawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 13:30
CPC Classifications
C; C01; C01B; C01B21/00; C01B21/06; C01B21/068; C01B21/0685; C01P; C01P2004/00; C01P2004/50; C01P2004/60; C01P2004/61; C01P2004/62

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 84 words
A process for preparing silicon nitride powder, which comprises baking a powdery mixture comprising (i) 1 part by weight of silica powder, or a silica-containing substance in terms of silica, (ii) 0.4 to 4 parts by weight of carbon powder, or a substance generating carbon by baking, in terms of carbon and (iii) 0.005 to 1 part by weight of silicon nitride powder synthesized by a silica reduction method, at a temperature of from 1350° to 1550° C. in a nonoxidative atmosphere containing nitrogen.
Claim 2
Dependent Claim 84 words
A process for preparing silicon nitride powder, which comprises baking a powdery mixture comprising (i) 1 part by weight of silica powder, or a silica-containing substance in terms of silica, (ii) 0.4 to 4 parts by weight of carbon powder, or a substance generating carbon by baking, in terms of carbon and (iii) 0.005 to 1 part by weight of silicon nitride powder synthesized by a silica reduction method, at a temperature of from 1350° to 1550° C. in a nonoxidative atmosphere containing nitrogen.
Claim 3
Dependent Claim 25 words
The process according to claim 1, wherein silicon nitride powder having grain size of 0.1 to 2 μm is employed as said silicon nitride powder.
Claim 4
Dependent Claim 27 words
The process according to claim 1, wherein silicon nitride powder containing not less than 50% of α-Si 3 N 4 is employed as said silicon nitride powder.
Claim 5
Dependent Claim 74 words
The process according to claim 1, wherein said silica reduction method is carried out by subjecting a powdery mixture comprising 1 part by weight of silica powder and 0.4 to 4 parts by weight of carbon powder together with or without 0.005 to 1 part by weight of silicon nitride powder and/or silicon carbide powder, to a heat treatment at a temperature of from 1400° to 1550° C. in a non-oxidative atmosphere containing nitrogen.
Claim 6
Dependent Claim 27 words
The process according to claim 1, wherein said silicon nitride powder synthesized by a silica reduction method is obtained by the process as defined in claim 1.
Claim 7
Dependent Claim 15 words
The process according to claim 1, wherein said silica containing substance is a methylsilicic acid.
Claim 8
Dependent Claim 27 words
The process according to claim 1, wherein said substance generating carbon by baking is selected from the group consisting of phenol-formaldehyde resin, resorcinolformaldehyde resin, polystyrene and hydrocarbon.
Claim 9
Dependent Claim 31 words
The process of claim 1, further comprising the step of recycling a portion of the silicon nitride powder product to the process to be used as said starting silicon nitride powder.
Claim 10
Dependent Claim 25 words
The process according to claim 1, wherein said silica powder or said silica-containing substances has a grain size equal to or less than 1 μm.
Claim 11
Dependent Claim 24 words
The process according to claim 9, wherein said silica powder or said silica-containing substance has a grain size from about 0.01 to 0.95 μm.
Claim 12
Dependent Claim 19 words
The process of claim 2, wherein said silicon nitride powder has a grain size of 0.2 to 1 μm.
Claim 13
Dependent Claim 27 words
The process of claim 1, further comprising the step of heat treating the baked product at a temperature from 600° to 800° C. in an oxidative atmosphere.
Claim 14
Dependent Claim 120 words
A process for preparing silicon nitride powder, comprising the steps of: preparing a starting silicon nitride powder by the silica reduction method by heat treating said starting silicon nitride powder at a temperature of 1400° to 1550° C. in a non-oxidative atmosphere containing nitrogen; adding 0.005 to 1 part by weight of said silicon nitride powder with (i) 1 part by weight in terms of silica of silica powder or a silica-containing substance; and (ii) 0.4 to 4 parts by weight in terms of carbon of carbon powder, or a substance generating carbon upon baking, to form a powdery mixture; and baking said powdery mixture at a temperature of from 1350° to 1550° C. in a nonoxidative atmosphere containing nitrogen.
Claim 15
Dependent Claim 120 words
A process for preparing silicon nitride powder, comprising the steps of: preparing a starting silicon nitride powder by the silica reduction method by heat treating said starting silicon nitride powder at a temperature of 1400° to 1550° C. in a non-oxidative atmosphere containing nitrogen; adding 0.005 to 1 part by weight of said silicon nitride powder with (i) 1 part by weight in terms of silica of silica powder or a silica-containing substance; and (ii) 0.4 to 4 parts by weight in terms of carbon of carbon powder, or a substance generating carbon upon baking, to form a powdery mixture; and baking said powdery mixture at a temperature of from 1350° to 1550° C. in a nonoxidative atmosphere containing nitrogen.

References Cited (Backward Citations)

JPS5238500A Cited
DE2642554A1 Cited
DE2814235A1 Cited
JPS53102300A Cited
US4428916A Cited
GB1579417A Cited
US4264565A Cited
US4368180A Cited
EP0047143A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-04-29 1988-10-29 1989-04-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-04-29 1992-10-29 1993-04-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-04-29 1996-10-29 1997-04-30 $7700.00 Window Closed / Lapsed

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