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US4513431A
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Charge coupled device output circuit structure
Assignee: International Business Machines Corp
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Filing: 1982-06-07
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Granted: 1985-04-23
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Expires: 2002-06-07
Abstract
Abstract This CCD structure comprises a substrate floating diffusion region from which an output signal is taken and a drain diffusion spaced apart from the output diffusion and from which the charge is returned. An electrode to be pulsed is placed immediately preceding the floating diffusion and a plurality of electrodes is interposed between the two diffusions. The first such electrode beyond the output floating diffusion is operated as a reset pulse gate electrode and the last such electrode before the drain diffusion is operated as a drain pulse gate electrode, while the intermediate electrode(s) have phased clock pulses applied thereto in synchronism with such phased clock pulses applied to other electrodes of the overall CCD circuit arrangement. The preceding pulsed electrode serves to extend the lower limit of the potential change of the floating diffusion. The interposed electrodes permit signal charge to be transferred out of the floating diffusion into a gate-induced potential well instead of directly into the drain diffusion, extending the upper limit of potential change of the floating diffusion. Further, the drain gate isolates the drain diffusion from the preceding final CCD stages thereby obviating "charge sloshing".
Inventors
- 👤 Savvas G. Chamberlain
- 👤 Eugene S. Schlig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:48
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/454
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
281 words
An output circuit arrangement for operating a charge coupled device structure, said structure comprising a semiconductor substrate of one conductivity type, a layer of semiconductor material of another type implanted on said substrate, one deposit of enhanced semiconductor material of said other type diffused into said layer to form a floating diffusion, another deposit of said enhanced semiconductor material diffused into said layer at a location spaced apart from the location of said one deposit to form a drain diffusion, an output signal terminal electrically connected to said floating diffusion, a return potential terminal electrically connected to said drain diffusion, a multiple of at least two electrodes formed above said layer and spaced apart in succession preceding said one deposit, a multiple of at least three electrodes formed above said layer and spaced apart in succession between said deposits with each electrode having an electric circuit terminal, a layer of insulating material between said electrodes and said layer of implanted material, an output potential translating circuit having an input terminal connected to said output terminal and having a circuit output terminal, a source of first clocking wave connected to the first appearing electrode of said at least two electrodes preceding said floating diffusion and to the intermediate electrode of said multiple of electrodes succeeding said floating electrode, circuitry for applying a second reset wave of pulse energy to the first of said multiple of at least three electrodes succeeding said floating diffusion, and circuitry for applying set pulse energy to the second of the last of said at least two electrodes preceding said floating diffusion, and to the last of said multiple of at least three electrodes succeeding said floating diffusion.
Claim 2
Dependent Claim
281 words
An output circuit arrangement for operating a charge coupled device structure, said structure comprising a semiconductor substrate of one conductivity type, a layer of semiconductor material of another type implanted on said substrate, one deposit of enhanced semiconductor material of said other type diffused into said layer to form a floating diffusion, another deposit of said enhanced semiconductor material diffused into said layer at a location spaced apart from the location of said one deposit to form a drain diffusion, an output signal terminal electrically connected to said floating diffusion, a return potential terminal electrically connected to said drain diffusion, a multiple of at least two electrodes formed above said layer and spaced apart in succession preceding said one deposit, a multiple of at least three electrodes formed above said layer and spaced apart in succession between said deposits with each electrode having an electric circuit terminal, a layer of insulating material between said electrodes and said layer of implanted material, an output potential translating circuit having an input terminal connected to said output terminal and having a circuit output terminal, a source of first clocking wave connected to the first appearing electrode of said at least two electrodes preceding said floating diffusion and to the intermediate electrode of said multiple of electrodes succeeding said floating electrode, circuitry for applying a second reset wave of pulse energy to the first of said multiple of at least three electrodes succeeding said floating diffusion, and circuitry for applying set pulse energy to the second of the last of said at least two electrodes preceding said floating diffusion, and to the last of said multiple of at least three electrodes succeeding said floating diffusion.
Claim 3
Dependent Claim
27 words
An output circuit structure for a charge coupled device as defined in claim 1, and wherein said multiple or electrodes between said deposits consists of three electrodes.
Claim 4
Dependent Claim
27 words
An output circuit structure for a charge coupled device as defined in claim 1, and wherein said multiple of electrodes between said deposits consists of four electrodes.
Claim 5
Dependent Claim
22 words
An output circuit structure for a charge coupled device as defined in claim 1, and wherein said one conductivity type is P-type.
Claim 6
Dependent Claim
20 words
An output circuit structure for a charge coupled device as defined in claim 4, and wherein said implant is N-type.
Claim 7
Dependent Claim
28 words
An output circuit arrangement for operating a charge coupled device structure as defined in claim 1, and wherein said output potential translating circuit includes a source follower circuit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-22 | 1988-10-22 | 1989-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-22 | 1992-10-22 | 1993-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-22 | 1996-10-22 | 1997-04-23 | $7700.00 | Window Closed / Lapsed |