Semiconductor device capable of structural selection

Claim 1

A semiconductor device capable of structural selection in response to the output of a radiating means, said device comprising: a semiconductor substrate of a first conductivity type; first wiring means having at least three first semiconductor regions of a second conductivity type which are formed at predetermined intervals in a surface of said semiconductor substrate, and at least two second semiconductor regions of the first conductivity type which are formed one each between pairs of adjacent ones of said first semiconductor regions, said first wiring means being electrically disconnected in an initial state; an insulation film located over at least a portion of said first wiring means; and a plurality of second wiring means which are formed on said insulation film over said first wiring means in correspondence with said second semiconductor regions, respectively, with each of said second wiring means extending across said first wiring means and being electrically connected in the initial state, and with each of said second wiring means and a corresponding one of said second semiconductor regions being formed at positions such that said each of said second wiring means and said corresponding one of said second semiconductor regions may be subject to the output of said radiating means so as to electrically disconnect said each of said second wiring means while at the same time electrically connecting together said first semiconductor regions arranged one at each side of said corresponding one of said second semiconductor regions.