US3882532A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Externally accessing mechanically difficult to access circuit nodes in integrated circuits
Assignee: International Business Machines Corp
•
Filing: 1973-12-26
•
Granted: 1975-05-06
•
Expires: 1993-12-26
Abstract
Abstract A structure for selectively externally accessing mechanically difficult to access circuit nodes in an integrated circuit by the combination of an externally accessible circuit terminal and a plurality of connecting means, each of which connect a particular circuit node which is difficult to access to said terminal. Each of the connecting means includes a photoconductive semiconductor device which is normally electrically nonconductive but which is adapted to electrically conduct when subjected to localized light such as a laser beam. When the particular photoconductive device is rendered conductive, it in turn makes the connecting means associated with it conductive and, thereby, provides a conductive path from the particular circuit node to the externally accessible terminal.
Inventors
- 👤 Hubert F Quinn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:43
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/20; H10P74/207; G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/308; G01R31/311; H10F; H10F39/00; H10F39/10; H10F39/107; H10P74/27; H10P74/273; H10P74/277
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
228 words
In a semiconductor integrated circuit structure comprising a semiconductor substrate surface from which a plurality of regions of different conductivity types extend into the substrate to provide the active and passive devices of the circuit, a layer of insulative material covering said surface, a plurality of electrical contacts extending through openings in said insulative layer respectively to said regions, and a metallization pattern formed on said insulative layer respectively connecting a plurality of chip terminals formed on said insulative layer to different regions through said contacts, the improvement comprising the combination of at least one externally accessible circuit terminal, a plurality of photoconductive semiconductor devices formed at said surface of said substrate, a plurality of first conductive connecting means on said insulative layer, each respectively extending through said insulative layer to contact one of said photoconductive devices and connecting said photoconductive device to said externally accessible terminal, and a plurality of second conductive connecting means on said insulative layer, each respectively extending through said layer to respectively contact one of said photoconductive devices and connecting said photoconductive device to a respective one of said chip terminals, said photoconductiVe devices being normally non-conductive but adapted to conduct when selectively exposed to light to thereby provide a conductive path from the chip terminal to which the exposed device is connected, through the exposed device to the externally accessible circuit terminal.
Claim 2
Dependent Claim
228 words
In a semiconductor integrated circuit structure comprising a semiconductor substrate surface from which a plurality of regions of different conductivity types extend into the substrate to provide the active and passive devices of the circuit, a layer of insulative material covering said surface, a plurality of electrical contacts extending through openings in said insulative layer respectively to said regions, and a metallization pattern formed on said insulative layer respectively connecting a plurality of chip terminals formed on said insulative layer to different regions through said contacts, the improvement comprising the combination of at least one externally accessible circuit terminal, a plurality of photoconductive semiconductor devices formed at said surface of said substrate, a plurality of first conductive connecting means on said insulative layer, each respectively extending through said insulative layer to contact one of said photoconductive devices and connecting said photoconductive device to said externally accessible terminal, and a plurality of second conductive connecting means on said insulative layer, each respectively extending through said layer to respectively contact one of said photoconductive devices and connecting said photoconductive device to a respective one of said chip terminals, said photoconductiVe devices being normally non-conductive but adapted to conduct when selectively exposed to light to thereby provide a conductive path from the chip terminal to which the exposed device is connected, through the exposed device to the externally accessible circuit terminal.
Claim 3
Dependent Claim
30 words
The monolithic integrated circuit of claim 1 wherein the chip terminals are on a plurality of chips on a wafer and the photoconductive devices are located in the wafer kerf.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-05 | 1978-11-04 | 1979-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-05 | 1982-11-04 | 1983-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-05 | 1986-11-04 | 1987-05-06 | $7700.00 | Window Closed / Lapsed |