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US4513073A Expired / Lapsed US ⏱️ 0.0 years remaining

Layered photoconductive element

Assignee: 3M Co
•
Filing: 1983-08-18
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Granted: 1985-04-23
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Expires: 2003-08-18
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Abstract

Abstract The present invention relates to a photoconductive element comprising a photoconductive layer and one or more blocking layers adjacent thereto and having space charge layers interposed between the photoconductive layer and the blocking layers to increase the voltage acceptance potential of the photoconductive element.

Inventors

  • 👤 Frank R. Jeffrey, III
  • 👤 James R. Shirck

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 09:59
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/043; G03G5/0433; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 148 words
In a photoconductive element comprising an electrically conductive, supporting substrate and a photoconductive layer carried by said substrate wherein a blocking layer means is carried adjacent at least one major surface of said photoconductor layer to suppress the flow of charge carriers attracted toward the photoconductive layer as a result of any surface charge applied to said element, wherein the improvement comprises a space charge layer interposed between said blocking layer means and said photoconductive layer, said space charge layer comprising a semiconductive material selected from the group consisting of n-type and p-type semiconductor materials, the space charge layer between said photoconductive layer and said blocking layer being selected so that upon charging said photoconductive element the electrical field at the interface between said space charge layer and said photoconductor is higher than the electric field at the interface between said space charge layer and said blocking layer.
Claim 2
Dependent Claim 148 words
In a photoconductive element comprising an electrically conductive, supporting substrate and a photoconductive layer carried by said substrate wherein a blocking layer means is carried adjacent at least one major surface of said photoconductor layer to suppress the flow of charge carriers attracted toward the photoconductive layer as a result of any surface charge applied to said element, wherein the improvement comprises a space charge layer interposed between said blocking layer means and said photoconductive layer, said space charge layer comprising a semiconductive material selected from the group consisting of n-type and p-type semiconductor materials, the space charge layer between said photoconductive layer and said blocking layer being selected so that upon charging said photoconductive element the electrical field at the interface between said space charge layer and said photoconductor is higher than the electric field at the interface between said space charge layer and said blocking layer.
Claim 3
Dependent Claim 41 words
A photoconductive element according to claim 1 wherein said photoconductive element contains two blocking layers with one layer adjacent each major surface of said photoconductive layer and wherein space charge layers are interposed between said photoconductive layer and said blocking layers.
Claim 4
Dependent Claim 39 words
A photoconductive element according to claim 1 wherein said semiconductive material is a material having an atomic matrix selected from the group consisting of silicon and germanium atoms and which contains at least one of hydrogen or halogen atoms.
Claim 5
Dependent Claim 33 words
A photoconductive element according to claim 3 wherein said semiconductive material is doped with materials selected from the group consisting of the elements of Group III and Group V of the periodic table.
Claim 6
Dependent Claim 19 words
A photoconductive element according to claim 4 wherein said n-type space charge layer is a phosphorous-doped amorphous silicon:hydrogen alloy.
Claim 7
Dependent Claim 19 words
A photoconductive element according to claim 4 wherein said p-type space charge layer is a boron-doped amorphous silicon:hydrogen alloy.
Claim 8
Dependent Claim 26 words
A photoconductive element according to claim 1 wherein said photoconductive layer is selected from the group consisting of organic photoconductor and inorganic photoconductor and mixtures thereof.
Claim 9
Dependent Claim 15 words
A photoconductive element according to claim 7 wherein said photoconductive layer comprises hydrogenated amorphous silicon.
Claim 10
Dependent Claim 21 words
A photoconductive element according to claim 8 wherein said photoconductive layer has a thickness of about 0.5 to about 5 micrometers.
Claim 11
Dependent Claim 15 words
A photoconductive element according to claim 1 wherein said element is a continuous, flexible belt.
Claim 12
Dependent Claim 11 words
An electrographic apparatus containing a photoconductive element according to claim 1.

References Cited (Backward Citations)

US4265991A Cited
US4297392A Cited
US4217148A Cited
US4365015A Cited
US4378417A Cited
US4377628A Cited
US4359514A Cited
US4365013A Cited
GB2099600A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-04-22 1988-10-22 1989-04-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-04-22 1992-10-22 1993-04-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-04-22 1996-10-22 1997-04-23 $7700.00 Window Closed / Lapsed

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