US4511429A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for dry etching of aluminum and its alloy
Assignee: Hitachi Ltd
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Filing: 1982-04-09
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Granted: 1985-04-16
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Expires: 2002-04-09
Abstract
Abstract This invention relates to a fine processing of aluminum and aluminum alloy layers, and to a method for dry etching by a plasma in a gas containing hydrogen and/or a gaseous hydrogen compound and further containing a gaseous chloride. The fine processing without suffering from the side-etching is feasible even in case using an inorganic material as a mask.
Inventors
- 👤 Tatsumi Mizutani
- 👤 Toshihide Ohgata
- 👤 Hideo Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:33
CPC Classifications
H; H10; H10P; H10P50/00; C; C23; C23F; C23F4/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
60 words
Process for dry etching of copper-containing aluminum alloys comprising adding 0.5-10 vol.% of at least one member selected from hydrogen and gaseous hydrogen compounds in a chloride gas-containing dry etching gas in a method for processing an article of said copper-containing aluminum alloys with a glow discharge plasma of said chloride gas-containing gas, and heating the article at 80°-250° C.
Claim 2
Dependent Claim
60 words
Process for dry etching of copper-containing aluminum alloys comprising adding 0.5-10 vol.% of at least one member selected from hydrogen and gaseous hydrogen compounds in a chloride gas-containing dry etching gas in a method for processing an article of said copper-containing aluminum alloys with a glow discharge plasma of said chloride gas-containing gas, and heating the article at 80°-250° C.
Claim 3
Dependent Claim
32 words
Process for dry etching of copper-containing aluminum alloys as described in claim 1 wherein said etching gas contains 1-4 vol.% of at least one member selected from hydrogen and gaseous hydrogen compounds.
Claim 4
Dependent Claim
20 words
Process for dry etching of copper-containing aluminum alloys as described in claim 1 wherein said etching gas contains hydrogen gas.
Claim 5
Dependent Claim
35 words
Process for dry etching of copper-containing aluminum alloys as described in claim 1 wherein said etching gas contains at least one gaseous hydrogen compound selected from hydrogen chloride, methane, ethylene, methyl chloride and ethyl chloride.
Claim 6
Dependent Claim
48 words
Process for dry etching of copper-containing aluminum alloys as described in one of claims 1 to 4 comprising etching by partially covering the surface of said article with a prescribed pattern mask composed of one material selected from silicon oxide, silicon nitride, polycrystalline silicon, molybdenum, tungsten and gold.
Claim 7
Dependent Claim
42 words
Process for dry etching of copper-containing aluminum alloys as described in claim 5 comprising using an alloy containing a member selected from the group consisting of: (1) 0.5-4 wt.% Cu and (2) 0.5-4 wt.% Cu and 0.8-2.3 wt.% Si as said article.
Claim 8
Dependent Claim
25 words
Process for dry etching of copper-containing aluminum alloys as described in claim 5 comprising using said aluminum alloy containing 0.5-4 wt.% Cu as said article.
Claim 9
Dependent Claim
23 words
Process for dry etching of copper-containing aluminum alloys as described in claim 1 comprising heating the surface of said article at 100°-150° C.
Claim 10
Dependent Claim
34 words
Process for dry etching of copper-containing aluminum alloys as described in claim 1 comprising using at least one member selected from the group consisting of boron trichloride and carbon tetrachloride as said chloride gas.
Claim 11
Dependent Claim
21 words
Process for dry etching of copper-containing aluminum alloys as described in claim 9 comprising using boron trichloride as said chloride gas.
Claim 12
Dependent Claim
34 words
Process for dry etching of copper-containing aluminum alloys as described in claim 7 comprising using at least one member selected from the group consisting of boron trichloride and carbon tetrachloride as said chloride gas.
Claim 13
Dependent Claim
21 words
Process for dry etching of copper-containing aluminum alloys as described in claim 11 comprising using boron trichloride as said chloride gas.
References Cited (Backward Citations)
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US4073669A
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JPS53124979A
Cited
JPS53140240A
Cited
US4267013A
Cited
JPS55134173A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-15 | 1988-10-15 | 1989-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-15 | 1992-10-15 | 1993-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-15 | 1996-10-15 | 1997-04-16 | $7700.00 | Window Closed / Lapsed |