Patent US4508749A successfully refreshed from Google Patents.
US4508749A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Patterning of polyimide films with ultraviolet light
Assignee: Aradigm Corp
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Filing: 1983-12-27
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Granted: 1985-04-02
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Expires: 2003-12-27
Abstract
Abstract A method for etching a polyimide body which involves directing U.V. radiation having a wavelength between about 240 to 400 nm. onto the body is described. The radiation is continued to be applied to the body for sufficient time to cause a direct etching of the body where the radiation impinges upon the body. The method is particularly useful where the U.V. radiation is passed through a mask located between the source of the ultraviolet radiation and the body so that a radiation pattern is projected onto the body where the direct etching takes place. The etching can be caused to produce openings having a positive slope in the radiation pattern upon the polyimide layer. The advantage of the positive slope is particularly great where a coating such as a metal layer is deposited over the remaining polyimide layer having the openings therein. The positive slope allows the complete filling of the openings.
Inventors
- 👤 James H. Brannon
- 👤 John R. Lankard, Sr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:55
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; B; B23; B23K; B23K26/00; B23K26/02; B23K26/06; B23K26/064; B23K26/066; B23K26/36; B23K26/40; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; B23K2101/00; B23K2101/36; B23K2101/40; B23K2103/00; B23K2103/30; B23K2103/42; B23K2103/50; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017; H05K3/46; H05K3/4644; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
40 words
A method for etching a polyimide body comprising: directing U.V. radiation having a wavelength between about 240 to 400 nm. onto said body for sufficient time to cause a direct etching of said body where the said radiation impinges thereon.
Claim 2
Independent Claim
40 words
A method for etching a polyimide body comprising: directing U.V. radiation having a wavelength between about 240 to 400 nm. onto said body for sufficient time to cause a direct etching of said body where the said radiation impinges thereon.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said etching continues to a depth of at least about 50 nanometers.
Claim 4
Dependent Claim
44 words
The method of claim 1 wherein a mask is located between the source of said U.V. radiation and said body and the pattern in said mask is projected through a suitable optical system and imaged onto said body where said direct etching takes place.
Claim 5
Dependent Claim
17 words
The method of claim 3 wherein said polyimide body is a layer of polyimide upon a substrate.
Claim 6
Dependent Claim
15 words
The method of claim 4 wherein said body is etched in an atmosphere containing oxygen.
Claim 7
Dependent Claim
14 words
The method of claim 4 wherein said body is etched in an inert atmosphere.
Claim 8
Dependent Claim
13 words
The method of claim 4 wherein said body is etched in a vacuum.
Claim 9
Dependent Claim
40 words
The method of claim 4 wherein said layer is etched completely to said substrate in the pattern to which it was exposed to said U.V. radiation and the sidewalls of the formed openings in said layer have a positive slope.
Claim 10
Dependent Claim
20 words
The method of claim 8 wherein a layer of metal is deposited onto said polyimide layer and into said openings.
Claim 11
Dependent Claim
45 words
The method of claim 9 wherein said substrate is at least in part integrated circuit and said layer of metal forms a part of the electrical interconnection system of the integrated circuit with the remaining portions of said polyimide layer acting as a dielectric layer.
Claim 12
Dependent Claim
55 words
The method of claim 9 wherein said substrate is at least in part a ceramic substrate which carries at least one integrated circuit device and said layer of metal forms a part of the electrical interconnection system of for said integrated circuit with the remaining portions of said polyimide layer acting as a dielectric layer.
Claim 13
Dependent Claim
16 words
The method of claim 1 wherein said U.V. radiation is produced by an excimer KrF laser.
Claim 14
Dependent Claim
16 words
The method of claim 1 wherein said U.V. radiation is produced by an excimer XeCl laser.
Claim 15
Dependent Claim
16 words
The method of claim 1 wherein said U.V. radiation is produced by an excimer XeF laser.
Claim 16
Dependent Claim
12 words
The method of claim 1 wherein said radiation is applied as pulses.
Claim 17
Dependent Claim
23 words
The method of claim 3 wherein said optical system includes an iris diaphragm through which said radiation passes to provide improved image quality.
Claim 18
Independent Claim
77 words
A method for etching through a polyimide layer carried upon a substrate comprising: directing U.V. radiation having a wavelength between about 240 to 400 nm. through a mask having a desired opening pattern; projecting said pattern of U.V. radiation through a suitable optical system and imaging onto said polyimide layer; continuing the exposure of said polyimide layer to said pattern of U.V. radiation until said layer has been etched through in the exposed pattern to said substrate.
Claim 19
Independent Claim
77 words
A method for etching through a polyimide layer carried upon a substrate comprising: directing U.V. radiation having a wavelength between about 240 to 400 nm. through a mask having a desired opening pattern; projecting said pattern of U.V. radiation through a suitable optical system and imaging onto said polyimide layer; continuing the exposure of said polyimide layer to said pattern of U.V. radiation until said layer has been etched through in the exposed pattern to said substrate.
Claim 20
Dependent Claim
22 words
The method of claim 17 wherein the said optical system includes at least two lens on either side of an iris diaphragm.
Claim 21
Dependent Claim
35 words
The method of claim 17 wherein the sidewalls of the formed openings in said layer have a positive slope and a layer of metal is deposited onto the said polyimide layer and into said openings.
Claim 22
Dependent Claim
46 words
The method of claim 19 wherein said substrate is at least in part an integrated circuit and said layer of metal forms a part of the electrical interconnection system of the integrated circuit with the remaining portions of said polyimide layer acting as a dielectric layer.
Claim 23
Dependent Claim
55 words
The method of claim 19 wherein said substrate is at least in part a ceramic substrate which carries at least one integrated circuit device and said layer of metal forms a part of the electrical interconnection system of for said integrated circuit with the remaining portions of said polyimide layer acting as a dielectric layer.
Claim 24
Dependent Claim
16 words
The method of claim 17 wherein said U.V. radiation is produced by an excimer KrF laser.
Claim 25
Dependent Claim
16 words
The method of claim 17 wherein said U.V. radiation is produced by an excimer XeCl laser.
Claim 26
Dependent Claim
16 words
The method of claim 17 wherein said U.V. radiation is produced by an excimer XeF laser.
Claim 27
Dependent Claim
16 words
The method of claim 19 wherein said polyimide layer is etched in an atmosphere containing oxygen.
Claim 28
Dependent Claim
15 words
The method of claim 19 wherein said polyimide layer is etched in an inert atmosphere.
Claim 29
Dependent Claim
14 words
The method of claim 19 wherein said polyimide layer is etched in a vacuum.
Claim 30
Independent Claim
143 words
A method for forming a multilayer metallurgy structure for circuit interconnections comprising: providing a substrate having a first circuit pattern of metallurgy thereon; forming a polyimide layer over said circuit pattern in sufficient thickness to act as a dielectric layer; directing U.V. radiation having a wavelength between about 240 to 400 nm. through a mask having a desired interlayer opening pattern; projecting said pattern of U.V. radiation through a suitable optical system and imaging onto said polyimide layer; continuing the exposure of said polyimide layer to said pattern of U.V. radiation until said layer has been etched through to said pattern of metallurgy with said openings each having sidewalls with a positive slope; and forming a second circuit pattern of metallurgy on the remaining polyimide layer and through said interlayer opening pattern to electrical interconnect the said first and second patterns of metallurgy.
Claim 31
Independent Claim
143 words
A method for forming a multilayer metallurgy structure for circuit interconnections comprising: providing a substrate having a first circuit pattern of metallurgy thereon; forming a polyimide layer over said circuit pattern in sufficient thickness to act as a dielectric layer; directing U.V. radiation having a wavelength between about 240 to 400 nm. through a mask having a desired interlayer opening pattern; projecting said pattern of U.V. radiation through a suitable optical system and imaging onto said polyimide layer; continuing the exposure of said polyimide layer to said pattern of U.V. radiation until said layer has been etched through to said pattern of metallurgy with said openings each having sidewalls with a positive slope; and forming a second circuit pattern of metallurgy on the remaining polyimide layer and through said interlayer opening pattern to electrical interconnect the said first and second patterns of metallurgy.
Claim 32
Dependent Claim
50 words
The method of claim 28 wherein said substrate is at least in part an integrated circuit and said first and second circuit patterns of metallurgy forms a part of the electrical interconnection system of the integrated circuit with the remaining portions of said polyimide layer acting as a dielectric layer.
Claim 33
Dependent Claim
59 words
The method of claim 28 wherein said substrate is at least in part a ceramic substrate which carries at least one integrated circuit device and said first and second circuit patterns of metallurgy forms a part of the electrical interconnection system of for said integrated circuit with the remaining portions of said polyimide layer acting as a dielectric layer.
Claim 34
Dependent Claim
16 words
The method of claim 28 wherein said U.V. radiation is produced by an excimer XeCl laser.
Claim 35
Dependent Claim
16 words
The method of claim 28 wherein said U.V. radiation is produced by an excimer XeF laser.
Claim 36
Dependent Claim
12 words
The method of claim 28 wherein said radiation is applied as pulses.
Claim 37
Dependent Claim
23 words
The method of claim 28 wherein said optical system includes an iris diaphragm through which said radiation passes to provide improved image quality.
References Cited (Backward Citations)
US4247496A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-01 | 1988-10-01 | 1989-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-01 | 1992-10-01 | 1993-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-01 | 1996-10-01 | 1997-04-02 | $7700.00 | Window Closed / Lapsed |