Oscillator utilizing inductive parameter of transistor

Claim 2

An oscillator comprising: a. a transistor coupled in a grounded-base configuration, said transistor being characterized by a scattering matrix wherein a reflection coefficient measured across terminals of a base-emitter junction of said transistor has a negative resistive component and a positive angle over a range of oscillation frequency, said range being dependent on a bias electric current impressed through said base-emitter junction, said positive angle of relection coefficient being indicative of inductance within said base-emitter junction in said oscillation frequency range; b. Capacitive means coupled across terminals of said base-emitter junction for resonating with said inductance at frequencies within said oscillation frequency range; and c. means coupled across terminals of a base-collector junction of said transistor for extracting an output signal of said oscillator at a frequency within said oscillation frequency range.

Claim 3

An oscillator according to claim 1 wherein said extracting means includes means for shunting signals at frequencies below said oscillation range away from output terminals of said oscillator.

Claim 4

An oscillator according to claim 1 or 2 further comprising biasing means for impressing said bias current through said base-emitter junction.

Claim 5

An oscillator according to claim 1 or 2 wherein said capacitive means includes means for varying the capacitance thereof in response to an external electric signal.

Claim 6

An oscillator according to claim 4 further comprising biasing means for impressing said bias current through said base-emitter junction.

Claim 7

An oscillatory according to claim 5 further comprising means for isolating said external electric signal from said bias current.

Claim 8

An oscillator circuit including a transistor having a base-emitter junction and a base-collector junction for oscillating at a desired oscillation frequency, said circuit comprising: a. tuning means coupled to said base-emitter junction via a base terminal and an emitter terminal of said transistor; b. output means coupled to said base-collector junction via said base terminal and a collector terminal of said transistor; c. said transistor being characterized by a scattering matrix wherein the reflection coefficient, as measured between said base terminal and said emitter terminal, has a negative resistive component, said coefficient including a reactive component wherein the angle thereof has a positive value over a range of oscillation frequency indicating inductance within said base-emitter junction; d. said tuning means including capacitive means resonating with said indicated inductance of said base-emitter junction; e. bias means coupled across said base-emitter junction to activate said transistor within a desired oscillation frequency range; and f. means for excluding signals within said oscillation frequency range from said biasing means and for providing an output signal at said desired oscillation frequency.

Claim 9

An oscillator circuit including a transistor having a base-emitter junction and a base-collector junction for oscillating at a desired oscillation frequency, said circuit comprising: a. tuning means coupled to said base-emitter junction via a base terminal and an emitter terminal of said transistor; b. output means coupled to said base-collector junction via said base terminal and a collector terminal of said transistor; c. said transistor being characterized by a scattering matrix wherein the reflection coefficient, as measured between said base terminal and said emitter terminal, has a negative resistive component, said coefficient including a reactive component wherein the angle thereof has a positive value over a range of oscillation frequency indicating inductance within said base-emitter junction; d. said tuning means including capacitive means resonating with said indicated inductance of said base-emitter junction; e. bias means coupled across said base-emitter junction to activate said transistor within a desired oscillation frequency range; and f. means for excluding signals within said oscillation frequency range from said biasing means and for providing an output signal at said desired oscillation frequency.

Claim 10

An oscillator circuit according to claim 7 wherein said capacitive means provides capacity which varies in response to an external electric signal.

Claim 11

An oscillator circuit according to claim 8 further comprising means coupled between said capacitive means and said biasing means for isolating said external electric signal from said biasing means.

Claim 14

The apparatus of claim 10 further including means for preventing the base-collector junction resistance from becoming negative.