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US4506366A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Hitachi Ltd
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Filing: 1982-06-29
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Granted: 1985-03-19
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Expires: 2002-06-29
Abstract
Abstract A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer. The device of the present invention is effective for increasing the output of semiconductor laser devices.
Inventors
- 👤 Naoki Chinone
- 👤 Yasutoshi Kashiwada
- 👤 Shigeo Yamashita
- 👤 Kunio Aiki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:43
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/20; H01S5/22; H01S5/2203; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4043
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
227 words
A semiconductor laser device including at least a laminated layer region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, means forming a resonant cavity, and electrodes for injecting current into said device, wherein said second layer is an active layer; said third semiconductor layer has a refractive index smaller than that of said second semiconductor layer; said first and fourth semiconductor layers having a refractive index smaller that that of said second and third semiconductor layers; said first semiconductor layer has a conductivity type opposite that of said third and fourth semiconductor layers; the forbidden band gap of said first and third semiconductor layers is greater than that of said second semiconductor layer; and at least said second and third semiconductor layers are bent along lines parallel to and inwardly spaced from the laser light-emitting facets of said device, to such a degree that the laser light generated inside said second semiconductor layer, in the proximity of said laser light-emitting facets, is optically coupled to said third semiconductor layer and is emitted from the crystal facets of said third semiconductor layer, at least one of said electrodes having a width less than the width of said laminated layer regions such as to overlie substantially only that portion of said layer region between said lines where said second and third layers are bent.
Claim 2
Dependent Claim
227 words
A semiconductor laser device including at least a laminated layer region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, means forming a resonant cavity, and electrodes for injecting current into said device, wherein said second layer is an active layer; said third semiconductor layer has a refractive index smaller than that of said second semiconductor layer; said first and fourth semiconductor layers having a refractive index smaller that that of said second and third semiconductor layers; said first semiconductor layer has a conductivity type opposite that of said third and fourth semiconductor layers; the forbidden band gap of said first and third semiconductor layers is greater than that of said second semiconductor layer; and at least said second and third semiconductor layers are bent along lines parallel to and inwardly spaced from the laser light-emitting facets of said device, to such a degree that the laser light generated inside said second semiconductor layer, in the proximity of said laser light-emitting facets, is optically coupled to said third semiconductor layer and is emitted from the crystal facets of said third semiconductor layer, at least one of said electrodes having a width less than the width of said laminated layer regions such as to overlie substantially only that portion of said layer region between said lines where said second and third layers are bent.
Claim 3
Dependent Claim
53 words
The semiconductor laser device defined in claim 1 wherein a fifth semiconductor layer, having the same conductivity type as said third semiconductor layer, is formed between said second and third semiconductor layers and the forbidden band gap of said fifth semiconductor layer is greater than that of said second and third semiconductor layers.
Claim 4
Dependent Claim
28 words
The semiconductor laser device defined in claim 2 wherein said fifth semiconductor layer is no thicker than the oscillation wavelength of the laser light inside an active layer.
Claim 5
Dependent Claim
84 words
The semiconductor laser device defined in claim 1 wherein said first semiconductor layer is formed on said semiconductor substrate; recesses are located on the upper surface of said first semiconductor layer in the proximity of the light-emitting facets; at least said second, third and fourth semiconductor layers are disposed as sequential laminations on said first semiconductor layer; and at least said first, second and third semiconductor layers are bent in the direction of said semiconductor substrate in a manner which corresponds to said recesses.
Claim 6
Dependent Claim
85 words
The semicondcutor laser device defined in claim 2 wherein said first semiconductor layer is formed on said semiconductor substrate; recesses are located on the upper surface of said first semiconductor layer in the proximity of the light-emitting facets; at least said second, fifth, third and fourth semiconductor layers are disposed as sequential laminations on said first semiconductor layer; and at least said first, second, fifth and third semiconductor layers are bent in the direction of said semiconductor substrate in a manner corresponding to said recesses.
Claim 7
Dependent Claim
93 words
The semiconductor laser device defined in claim 1 wherein said fourth semiconductor layer is formed on said semiconductor substrate; protuberances are contained on the upper surface of said fourth semiconductor layer in the proximity of the light-emitting facets; at least said third, second and first semiconductor layers are disposed as sequential laminations on said fourth semiconductor layer; and at least said said fourth, third and second semiconductor layers are bent in the direction of the laminate layer with respect to said semiconductor substrate in such a manner as to correspond to said protuberances.
Claim 8
Dependent Claim
70 words
The semiconductor laser device defined in claim 2 wherein said fourth semiconductor layer is formed on said semiconductor substrate; protuberances are contained on the upper surface of said fourth semiconductor layer in the proximity of the light-emitting facets; and at least said third, fifth and second semiconductor layers are bent in the direction of the laminate layer with respect to said semiconductor substrate in a manner corresponding to said protuberances.
References Cited (Backward Citations)
JPS5485688A
Cited
US4185256A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-18 | 1988-09-17 | 1989-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-18 | 1992-09-17 | 1993-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-18 | 1996-09-17 | 1997-03-19 | $7700.00 | Window Closed / Lapsed |