FET Controlled thyristor

Claim 2

In a thyristor of the type including a semiconductor body having a boundary surface and including a first emitter of a first conductivity type, a first base of a second, opposite conductivity type carrying said first emitter, a second base of the first conductivity type carrying and forming a pn junction with said first base, a second emitter of the second conductivity type carrying said second base, a pair of emitter electrodes having respective terminals for connection to a load respectively carried on said first and second emitters, and an auxiliary emitter of the first conductivity type for internal current gain located in said first base spaced from said first emitter and extending to said boundary surface and carrying an auxiliary emitter electrode at said boundary surface, the improvement therein comprising: a semiconductor switch connected between and operable to electrically connect and disconnect said auxiliary emitter electrode and said first base adjacent said auxiliary emitter wherein: said first and second bases and said first emitter form a first structure having a first amplification factor α 1 ; said first and second bases and said auxiliary emitter form a second structure having a second amplification factor α 2 ; and with a blocking voltage applied to said pair of emitter electrodes, the amplification factor α 2 is greater relative to the charge carriers emitted by said auxiliary emitter than the amplification factor α 1 .

Claim 3

The improved thyristor of claim 1, wherein: said first emitter is a p-conductivity emitter.

Claim 4

The improved thyristor of claim 1, wherein: said first emitter is an n-conductivity emitter.

Claim 5

The improved thyristor of claim 1, and further comprising: a semiconductor region of the second conductivity type in said auxiliary emitter extending to said boundary surface and contacting a portion of said auxiliary emitter electrode, said region connected to said first base by said semiconductor switch.

Claim 6

The improved thyristor of claim 1, wherein said semiconductor switch comprises: a first semiconductor region in said auxiliary emitter extending up to said boundary surface and contacting a portion of said auxiliary emitter electrode; a second region of said first base adjacent said auxiliary emitter; an edge region of said auxiliary emitter between said first and second regions; an insulated gate carried on said boundary surface over said edge region and bridging respective portions of said first and second regions; and a control voltage terminal connected to said gate.

Claim 7

The improved thyristor of claim 1, wherein said semiconductor switch comprises: an external field effect transistor including a source-drain path connected between said auxiliary emitter electrode and said first base, said auxiliary emitter electrode including a lateral dimension which is less than that of said auxiliary emitter, a gate, and a control voltage terminal connected to said gate.

Claim 8

The improved thyristor of claim 1, wherein: the distance of said auxiliary emitter is less than the distance of said first emitter to the pn junction of said bases.

Claim 9

The improved thyristor of claim 1, and further comprising: a region of said first base surrounding said first emitter, said region including a doping concentration which is greater than that of that portion of said first base which surrounds said auxiliary emitter.

Claim 10

The improved thyristor of claim 1, and further comprising: at least one fixed emitter short circuit comprising a projection of said first base through said first emitter and contacting the appertaining emitter electrode.

Claim 11

The improved thyristor of claim 1, and further comprising: at least one controllable emitter short circuit comprising a first semiconductor region of the second conductivity type in said first emitter and extending to said boundary surface, a second semiconductor region of said first base adjacent said first emitter and extending to said boundary surface, a third semiconductor region of said first emitter between said first and second semiconductor regions, an insulated gate bridging said first, second and third regions, and a control voltage terminal connected to said insulated gate.

Claim 12

The improved thyristor of claim 1, and further comprising: a trigger electrode carried on said first base; and a terminal connected to said trigger electrode for connection to a triggering circuit.

Claim 13

The improved thyristor of claim 1, wherein: said semiconductor body has a second boundary surface on said second emitter; and said pair of electrodes constitute an anode and a cathode carried on said boundary surfaces.

Claim 14

In a thyristor of the type including a semiconductor body having a boundary surface and including a first emitter of a first conductivity type, a first base of a second, opposite conductivity type carrying said first emitter, a second base of the first conductivity type carrying and forming a pn junction with said first base, a second emitter of the second conductivity type carrying said second base, a pair of electrodes having respective terminals for connection to a load respectively carried on said first and second emitters, and an auxiliary emitter of the first conductivity type for internal current gain located in said first base spaced from said first emitter and extending to said boundary surface and carrying an auxiliary emitter electrode at said boundary surface, the improvement therein comprising: a semiconductor switch connected between and operable to electrically connect and disconnect said auxiliary emitter electrode and said first base adjacent said auxiliary emitter, said first and second bases and said first emitter forming a first structure having a first amplification factor α 1 , said first and second bases and said auxiliary emitter forming a second structure having a second amplification factor α 2 , with a blocking voltage applied to said pair of emitter electrodes, the amplification factor α 2 is greater relative to the charge carriers emitted by said auxiliary emitter than the amplification factor α 1 ; and a region of said first base surrounding said first emitter and including a greater plurality of recombination centers than does the region of said first base which surrounds said auxiliary emitter.

Claim 15

In a thyristor of the type including a semiconductor body having a boundary surface and including a first emitter of a first conductivity type, a first base of a second, opposite conductivity type carrying said first emitter, a second base of the first conductivity type carrying and forming a pn junction with said first base, a second emitter of the second conductivity type carrying said second base, a pair of electrodes having respective terminals for connection to a load respectively carried on said first and second emitters, and an auxiliary emitter of the first conductivity type for internal current gain located in said first base spaced from said first emitter and extending to said boundary surface and carrying an auxiliary emitter electrode at said boundary surface, the improvement therein comprising: a semiconductor switch connected between and operable to electrically connect and disconnect said auxiliary emitter electrode and said first base adjacent said auxiliary emitter, said first and second bases and said first emitter forming a first structure having a first amplification factor α 1 , said first and second bases and said auxiliary emitter forming a second structure having a second amplification factor α 2 , with a blocking voltage applied to said pair of emitter electrodes, the amplification factor α 2 is greater relative to the charge carriers emitted by said auxiliary emitter than the amplification factor α 1 ; and a region of said first base surrounding said first emitter and including a greater plurality of recombination centers than does the region of said first base which surrounds said auxiliary emitter.