High d/d, fast turn-on darlington controlled semiconductor switch

Claim 2

The electrical device of claim 1 wherein said first, said second, said third, and said fourth electrical contacts are each affixed to a recrystallized portion of said second region.

Claim 3

The semiconductor device of claim 2 wherein the surfaces of said first and said second regions comprising said top surface of said body lie in the same plane and said unitary electrical contact is affixed to an end portion of the PN junction between said first portion of said first region and said second portion of said second region exposed in the top surface thereby electrically shortcircuiting the PN junction.

Claim 4

The semiconductor device of claim 2 including a layer of an electrically insulating material disposed on at least that portion of the top surface of said body between said second and said third electrical contact portions of said unitary electrical contact including an end portion of that PN junction formed between said first portion of said first region and said second portion of said second region exposed in said at least that portion of the top surface.

Claim 5

The semiconductor device of claim 1 including a third portion of said second region having at least two distinct surface areas exposed in said top surface of said body, each of the at least two surface areas being substantially surrounded by said second portion of said second region; and said third electrical contact consists of at least two electrically conductive members, each of the members being affixed to a separate surface of the at least two surface areas of the third portion of the second region; and said electrically conductive connection comprises at least two electrical leads, each electrical lead being affixed to the first portion of the first region and only one of the at least two surface areas of the third portion of the second region.

Claim 6

The electrical device of claim 1 wherein said electrically conductive connection is in a pressure electrical contact relationship with said second and said third electrical contacts.

Claim 7

The electrical device of claim 7 wherein said electrically conductive connection comprises an electrically conductive metal having a predetermined resistivity.

Claim 8

The electrical device of claim 8 wherein said electrically conductive connection comprises an electrically conductive ceramic having a predetermined resistivity.

Claim 9

The electrical device of claim 7 including a sixth electrical contact in a pressure electrical contact relationship with said fourth electrical contact, said sixth electrical contact having a top surface, a bottom surface, an axially disposed recess formed in the bottom surface and extending radially outwardly from the center of the sixth electrical contact and having a third surface substantially parallel to and intermediate of said top and bottom surfaces, side walls extending from said third surface to said bottom surface, and an axially disposed aperture extending through said sixth contact from said top surface to said third surface of said recess; and said electrically conductive connection is disposed about the aperture of said sixth contact within said recess and electrically insulated from said sixth electrical contact by a layer of electrically insulating material whereby, said sixth electrical contact acts on said electrically insulating material and said electrically conductive connection to urge said electrically conductive connection into the pressure electrical contact relationship with said second and said third contacts.

Claim 10

The semiconductive device of claim 10 including an electrical lead extending axially downwardly through the aperture of said sixth electrical contact, through an axially disposed aperture extending entirely through said layer of electrically insulating material, through an axially disposed aperture extending entirely through said electrically conductive connection to electrically connect with said first electrical contact in a pressure electrical contact relationship.

Claim 11

The semiconductor device of claim 11 wherein said layer of electrically insulating material has an axially disposed boss which protrudes downwardly through the aperture of said electrically conductive connector, the aperture of said layer of electrically insulating material being axially disposed within the boss.

Claim 12

The semiconductor device of claim 12 wherein said layer of electrically insulating material has an outer peripheral portion which encloses the outer peripheral surface of said electrically conductive connection whereby said electrically conductive connection is disposed in a recess formed within the insulating material.

Claim 13

The electrical device of claim 13 wherein said layer of electrically insulating material comprises a material selected from the group consisting of polytetrafluoroethylene and trifluoromonochloroethylene.