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US4496450A
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US
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Process for the production of a multicomponent thin film
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1984-03-29
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Granted: 1985-01-29
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Expires: 2004-03-29
Abstract
Abstract A multicomponent amorphous silicon film suitable for a solar cell is produced at a higher deposition rate by a novel process comprising using jointly a sputtering method and a plasma CVD method within a pressure range of not lower than a pressure at which the maximum film formation rate is given in the sputtering method.
Inventors
- 👤 Hajime Hitotsuyanagi
- 👤 Nobuhiko Fujita
- 👤 Hideo Itozaki
- 👤 Hiromu Kawai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:08
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0057; C23C14/22; C23C14/34; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H; H10; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3422; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
44 words
A process for the production of a multicomponent thin film, characterized by using jointly a sputtering method and a plasma CVD method at a pressure of not lower than a pressure capable of giving the maximum rate of film formation in the sputtering method.
Claim 2
Dependent Claim
44 words
A process for the production of a multicomponent thin film, characterized by using jointly a sputtering method and a plasma CVD method at a pressure of not lower than a pressure capable of giving the maximum rate of film formation in the sputtering method.
Claim 3
Dependent Claim
16 words
The process of claim 1, wherein a magnetron sputtering method is used as the sputtering method.
Claim 4
Dependent Claim
18 words
The process of claim 1, wherein the thin film consists of an amorphous material containing at least silicon.
Claim 5
Dependent Claim
29 words
The process of claim 3, wherein the thin film consisting of the silicon-containing amorphous material is formed by the use of a silicon-containing compound gas and a rare gas.
Claim 6
Dependent Claim
20 words
The process of claim 3, wherein the thin film consisting of the silicon-containing amorphous material is formed by sputtering silicon.
Claim 7
Dependent Claim
10 words
The process of claim 5, wherein the silicon is doped.
Claim 8
Dependent Claim
25 words
The process of claim 3, wherein the thin film consisting of the silicon-containing amorphous material is formed by sputtering at least one dopant or modifier.
Claim 9
Dependent Claim
20 words
The process of claim 7, wherein the modifier is selected from the group consisting of carbon, germanium, tin and lead.
Claim 10
Dependent Claim
29 words
The process of claim 2, wherein the magnetron sputtering method is carried out with a magnetic flux density of at least 50 gauss on the surface of a target.
Claim 11
Dependent Claim
31 words
The process of claim 1, wherein a raw material gas containing at least one of monosilane and silicon tetrafluoride, diluted with at least one of hydrogen, helium and argon is used.
Claim 12
Dependent Claim
27 words
The process of claim 1, wherein at least one selected from the group consisting of carbon, silicon, germanium, tin and lead is used as a target material.
Claim 13
Dependent Claim
18 words
The process of claim 1, wherein the pressure is in the range of 5×10 -3 to 1 Torr.
Claim 14
Dependent Claim
16 words
The process of claim 2, wherein the magnetron sputtering method is carried out using an electromagnet.
Claim 15
Dependent Claim
17 words
The process of claim 2, wherein the magnetron sputtering method is carried out using a permanent magnet.
Claim 16
Dependent Claim
20 words
The process of claim 7, wherein the dopant is selected from the group consisting of boron, aluminum, phosphorus and arsenic.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-29 | 1988-07-30 | 1989-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-29 | 1992-07-30 | 1993-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-29 | 1996-07-30 | 1997-01-29 | $7700.00 | Window Closed / Lapsed |