US4495820A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitive pressure sensor
Assignee: Hitachi Ltd
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Filing: 1982-09-28
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Granted: 1985-01-29
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Expires: 2002-09-28
Abstract
Abstract A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.
Inventors
- 👤 Satoshi Shimada
- 👤 Kazuji Yamada
- 👤 Seikou Suzuki
- 👤 Motohisa Nishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:04
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0072; G01L9/0073; H; H01; H01G; H01G5/00; H01G5/16; H10; H10N; H10N39/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
88 words
A capacitive pressure sensor comprising: a first semiconductor substrate with an amplifier formed on the main surface; an insulating layer formed on said amplifier; at least one electrode formed on said amplifier through said insulating layer and electrically connected to said amplifier; a second semiconductor substrate serving as a diaphragm and disposed in opposition to said electrode for forming a capacitor; and a glass layer anodically bonding said first and second semiconductor substrates to each other in the region of peripheral portions of said electrode and said diaphragm.
Claim 2
Dependent Claim
88 words
A capacitive pressure sensor comprising: a first semiconductor substrate with an amplifier formed on the main surface; an insulating layer formed on said amplifier; at least one electrode formed on said amplifier through said insulating layer and electrically connected to said amplifier; a second semiconductor substrate serving as a diaphragm and disposed in opposition to said electrode for forming a capacitor; and a glass layer anodically bonding said first and second semiconductor substrates to each other in the region of peripheral portions of said electrode and said diaphragm.
Claim 3
Dependent Claim
16 words
A capacitive pressure sensor according to claim 1, wherein said glass layer is a sputtered glass.
Claim 4
Dependent Claim
18 words
A capacitive pressure sensor according to claim 1, wherein said glass layer is a chemical vapor deposited glass.
Claim 5
Dependent Claim
41 words
A capacitive pressure sensor according to claim 1 or 2, further comprising a resistor network arranged for being trimmed and being formed in a surface region of said first semiconductor substrate except the surface region occupied by said second semiconductor surface.
Claim 6
Dependent Claim
33 words
A capacitive pressure sensor according to claim 1 or 2, wherein in said second semiconductor substrate a diaphragm is formed by forming a depression on the surface opposite to that facing said electrode.
Claim 7
Dependent Claim
27 words
A capacitive pressure sensor according to claim 1 or 2, wherein said electrode is connected to said amplifier through a through hole provided in said insulating layer.
Claim 8
Dependent Claim
26 words
A capacitive pressure sensor according to claim 1 or 2, wherein said electrode includes a central electrode and a peripheral electrode formed around said central electrode.
Claim 9
Dependent Claim
86 words
A capacitive pressure sensor according to claim 1, wherein said amplifier is formed on the main surface of said first semiconductor substrate by diffusion, said insulating layer formed on said amplifier being provided with an etched through hole for enabling connection of said electrode to said amplifier, said electrode being a vapor-deposited electrode, and said second semiconductor substrate having a diaphragm formed therein by etching the surface of said second semiconductor substrate opposite to the surface thereof facing said electrode so as to form a depression.
Claim 10
Independent Claim
92 words
A method of manufacturing a capacitive pressure sensor comprising the steps of: forming an amplifier on the main surface of a first semiconductor substrate and forming an insulating film on the surface of said amplifier; forming at least one electrode on said insulating film and electrically connecting said electrode to said amplifier; forming a diaphragm in a second semiconductor substrate and disposing said diaphragm in opposition to said electrode to form a capacitor between said diaphragm and said electrode; and bonding anodically said first and second semiconductor substrates using a glass layer.
Claim 11
Independent Claim
92 words
A method of manufacturing a capacitive pressure sensor comprising the steps of: forming an amplifier on the main surface of a first semiconductor substrate and forming an insulating film on the surface of said amplifier; forming at least one electrode on said insulating film and electrically connecting said electrode to said amplifier; forming a diaphragm in a second semiconductor substrate and disposing said diaphragm in opposition to said electrode to form a capacitor between said diaphragm and said electrode; and bonding anodically said first and second semiconductor substrates using a glass layer.
Claim 12
Dependent Claim
56 words
A method of manufacturing a capacitive pressure sensor according to claim 9, further comprising the step of forming a resistor network for trimming in the surface region of said first semiconductor substrate other than the surface region thereof occupied by said second semiconductor substrate, and the step of trimming a part of the said resistor network.
Claim 13
Dependent Claim
49 words
A method of manufacturing a capacitive pressure sensor according to claim 9 or 10, wherein a plurality of sensors with the same structure are simultaneously formed on said first and second semiconductor substrates in said steps, and further comprising a step for pelletizing the resultant structure into respective sensors.
Claim 14
Dependent Claim
20 words
A method of manufacturing a capacitive pressure sensor according to claim 9, wherein said glass layer is formed by sputtering.
Claim 15
Dependent Claim
22 words
A method of manufacturing a capacitive pressure sensor according to claim 9, wherein said glass layer is formed by chemical vapor deposition.
Claim 16
Dependent Claim
94 words
A method of manufacturing a capacitive pressure sensor according to claim 9, wherein said amplifier is formed on the main surface of said first semiconductor substrate by a diffusion process, said insulating film on the surface of said amplifier is etched to form a through hole therein, said at least one electrode being vapor-deposited on said insulating film and electrically connected to said amplifier through said through hole, said diaphragm in said second semiconductor substrate being formed by etching the surface of said second semiconductor substrate opposite to the surface thereof facing said electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-29 | 1988-07-30 | 1989-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-29 | 1992-07-30 | 1993-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-29 | 1996-07-30 | 1997-01-29 | $7700.00 | Window Closed / Lapsed |