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US4494301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor device with multi-levels of polycrystalline silicon conductors
Assignee: RCA Corp
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Filing: 1983-09-01
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Granted: 1985-01-22
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Expires: 2003-09-01
Abstract
Abstract A method of making a semiconductor device having multi-levels of polycrystalline silicon conductors insulated from each other and from the silicon substrate on which the semiconductor device if formed. In this method, each of the silicon oxide layers insulating the conductors from each other and from the substrate surface are each individually formed by thermal oxidation so that each is tailored in thickness and electrical characteristics for the particular purpose that each serves.
Inventors
- 👤 Lorenzo Faraone
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10W; H10W20/00; H10W20/01
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
242 words
A method of making a semiconductor device having multi-levels of polycrystalline silicon conductors comprising the steps of (a) forming on the surface of a substrate of single crystalline silicon a first layer of silicon oxide, (b) forming on said first silicon oxide layer a first layer of polycrystalline silicon, (c) forming on said first polycrystalline silicon layer a second layer of silicon oxide, (d) forming on said second silicon oxide layer an oxidation resistant masking layer, (e) removing portions of said masking layer, second silicon oxide layer and first polycrystalline silicon layer to define the first polycrystalline silicon layer and provide it with at least one exposed side edge, (f) subjecting the device, with unremoved portions of said masking layer remaining over unremoved portions of said second silicon oxide layer, to heat and oxygen to thermally grow a silicon oxide layer over the exposed side edge of the defined first polycrystalline silicon layer, (g) separately from step (f) providing a third layer of silicon oxide of a desired thickness on a portion of said surface of the substrate adjacent said side edge of the first polycrystalline silicon layer, and (h) forming a second layer of polycrystalline silicon on the second silicon oxide layer to overlap the first polycrystalline silicon layer, on the silicon oxide layer over the side edge of the first polycrystalline silicon layer and over the third silicon oxide layer to overlap a portion of said surface of the substrate.
Claim 2
Independent Claim
242 words
A method of making a semiconductor device having multi-levels of polycrystalline silicon conductors comprising the steps of (a) forming on the surface of a substrate of single crystalline silicon a first layer of silicon oxide, (b) forming on said first silicon oxide layer a first layer of polycrystalline silicon, (c) forming on said first polycrystalline silicon layer a second layer of silicon oxide, (d) forming on said second silicon oxide layer an oxidation resistant masking layer, (e) removing portions of said masking layer, second silicon oxide layer and first polycrystalline silicon layer to define the first polycrystalline silicon layer and provide it with at least one exposed side edge, (f) subjecting the device, with unremoved portions of said masking layer remaining over unremoved portions of said second silicon oxide layer, to heat and oxygen to thermally grow a silicon oxide layer over the exposed side edge of the defined first polycrystalline silicon layer, (g) separately from step (f) providing a third layer of silicon oxide of a desired thickness on a portion of said surface of the substrate adjacent said side edge of the first polycrystalline silicon layer, and (h) forming a second layer of polycrystalline silicon on the second silicon oxide layer to overlap the first polycrystalline silicon layer, on the silicon oxide layer over the side edge of the first polycrystalline silicon layer and over the third silicon oxide layer to overlap a portion of said surface of the substrate.
Claim 3
Dependent Claim
42 words
A method of making a semiconductor device in accordance with claim 1 in which in each of the silicon oxide layers are formed by heating the device in oxygen to grow the oxide on the silicon substrate or the polycrystalline silicon layer.
Claim 4
Dependent Claim
47 words
A method of making a semiconductor device in accordance with claim 2 wherein after step (f) but before step (g) the step of removing any silicon oxide on the portion of the surface of the substrate adjacent the said side edge of the first polycrystalline silicon layer.
Claim 5
Dependent Claim
45 words
A method of making a semiconductor device in accordance with claim 3 in which the silicon oxide on the portion of the surface of the substrate is removed by an etching process which etches in a direction substantially perpendicular to the surface of the substrate.
Claim 6
Dependent Claim
31 words
A method of making a semiconductor device in accordance with claim 4 in which the silicon oxide on the portion of the surface of the substrate is removed by plasma etching.
Claim 7
Dependent Claim
69 words
A method of making a semiconductor device in accordance with claim 5 in which during step (e) portions of the first silicon oxide layer are also removed to expose portions of the substrate surface and during step (f) a new layer of silicon oxide is grown on the exposed substrate surface simultaneously with the growing of the silicon oxide layer on the edge of the first polycrystalline silicon layer.
Claim 8
Dependent Claim
26 words
A method of making a semiconductor device in accordance with claim 1 in which after step (f) but before step (h) the masking layer is removed.
Claim 9
Dependent Claim
32 words
A method of making a semiconductor device in accordance with claim 7 in which the masking layer is formed by depositing a layer of silicon nitride on the second silicon oxide layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |