Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
110 words
Apparatus for interconnecting one of a plurality of voltage sources with a load comprising, metal oxide semiconductor (MOS) transistor means, electrically in series with each of the voltage sources and the load, responsive to control signals for interconnecting the voltage sources with the load, only one of said voltage sources being interconnected at a time; sequencing means, generating control signals for turning off all interconnecting MOS transistors when the voltage of the interconnected voltage source falls below a predetermined threshold level, and thereafter for enabling another of the voltage sources; and means for supplying voltage to the load during the time interval that all interconnecting MOS transistors are turned off.
Claim 2
Dependent Claim
110 words
Apparatus for interconnecting one of a plurality of voltage sources with a load comprising, metal oxide semiconductor (MOS) transistor means, electrically in series with each of the voltage sources and the load, responsive to control signals for interconnecting the voltage sources with the load, only one of said voltage sources being interconnected at a time; sequencing means, generating control signals for turning off all interconnecting MOS transistors when the voltage of the interconnected voltage source falls below a predetermined threshold level, and thereafter for enabling another of the voltage sources; and means for supplying voltage to the load during the time interval that all interconnecting MOS transistors are turned off.
Claim 3
Dependent Claim
39 words
The apparatus of claim 1 further including means for raising the level of the predetermined threshold after the voltage of the interconnected voltage source has fallen below said predetermined threshold, whereby regenerative switching speeds the interconnection of voltage sources.
Claim 4
Dependent Claim
33 words
The apparatus of claim 1 further including means for additionally loading the interconnected voltage source after its level has fallen below said predetermined threshold, whereby regenerative switching speeds the interconnection of voltage sources.
Claim 5
Dependent Claim
23 words
The apparatus of claim 1 wherein the interconnecting MOS transistors have their substrates electrically connected to the load, whereby fail-safe operation is achieved.
Claim 6
Dependent Claim
28 words
The apparatus of claim 1 wherein at least one of the voltage sources comprises a lithium battery, mounted to a printed wiring board in a substantially permanent manner.
Claim 7
Dependent Claim
99 words
The apparatus of claim 1 wherein the sequencing means includes first and second comparators, the first comparator being jointly responsive to the voltage level of one of the voltage sources and to a first threshold voltage, for turning off the MOS transistor interconnecting said one of the voltage sources and the load, the second comparator being jointly responsive to the voltage level of said one of the voltage sources and to a second threshold voltage having a magnitude less than the first threshold voltage, for turning on the MOS transistor interconnecting another of the voltage sources and the load.
Claim 8
Independent Claim
120 words
A method for switching from a working voltage source to a standby voltage source with metal oxide semiconductor (MOS) transistors interconnecting each voltage source and a load comprising the steps of: comparing the voltage level of the working voltage source to the voltage level of a predetermined threshold; switching all MOS transistors to an off state when the voltage level of the working voltage source falls below the voltage level of the predetermined threshold; supplying voltage to the load from a capacitor during the time interval when all MOS transistors are in the off state; and switching the MOS transistor, associated with the standby voltage source, to an on state before the voltage stored on the capacitor is substantially reduced.
Claim 9
Independent Claim
120 words
A method for switching from a working voltage source to a standby voltage source with metal oxide semiconductor (MOS) transistors interconnecting each voltage source and a load comprising the steps of: comparing the voltage level of the working voltage source to the voltage level of a predetermined threshold; switching all MOS transistors to an off state when the voltage level of the working voltage source falls below the voltage level of the predetermined threshold; supplying voltage to the load from a capacitor during the time interval when all MOS transistors are in the off state; and switching the MOS transistor, associated with the standby voltage source, to an on state before the voltage stored on the capacitor is substantially reduced.
Claim 10
Dependent Claim
130 words
A telephone set, including apparatus for providing power to memory storage devices during power interruptions, said apparatus including P-channel metal oxide semiconductor (MOS) transistors interconnecting a primary and a secondary power source with the memory storage device, characterized by means responsive to a decrease in the primary voltage to a point below a threshold level for turning off the MOS transistor interconnecting the primary power source and the memory storage device, and for turning on the MOS transistor interconnecting the secondary power source and the memory storage device; means for delaying the turning on of the MOS transistor interconnecting the secondary power source and the memory storage device; and capacitor means for supplying voltage to the memory storage device during the time interval that all MOS transistors are turned off.
Claim 11
Dependent Claim
130 words
A telephone set, including apparatus for providing power to memory storage devices during power interruptions, said apparatus including P-channel metal oxide semiconductor (MOS) transistors interconnecting a primary and a secondary power source with the memory storage device, characterized by means responsive to a decrease in the primary voltage to a point below a threshold level for turning off the MOS transistor interconnecting the primary power source and the memory storage device, and for turning on the MOS transistor interconnecting the secondary power source and the memory storage device; means for delaying the turning on of the MOS transistor interconnecting the secondary power source and the memory storage device; and capacitor means for supplying voltage to the memory storage device during the time interval that all MOS transistors are turned off.
Claim 12
Dependent Claim
53 words
The telephone set of claim 8 further characterized by means for raising the threshold level at which switching from the primary to the secondary power source is activated after the level of the primary power source has fallen below the threshold level, whereby regenerative feedback increases the speed of switching between power sources.
Claim 13
Dependent Claim
167 words
A telephone set, including apparatus for providing power to memory storage devices during interruptions, said apparatus including P-channel metal oxide semiconductor (MOS) transistors interconnecting a primary and a secondary power source with the memory storage device, characterized by first comparator means, jointly responsive to the voltage level of the primary power source and to a first threshold voltage, for turning off the MOS transistor interconnecting the primary power source and the memory storage device; second comparator means, jointly responsive to the voltage level of the primary power source and to a second threshold voltage, for turning on the MOS transistor interconnecting the secondary power source and the memory storage device, the second threshold voltage having a magnitude less than the magnitude of the first threshold voltage; and capacitor means for providing voltage to the memory storage device during the time interval that the magnitude of the voltage level of the primary power source is less than the first threshold voltage, but greater than the second threshold voltage.
Claim 14
Dependent Claim
167 words
A telephone set, including apparatus for providing power to memory storage devices during interruptions, said apparatus including P-channel metal oxide semiconductor (MOS) transistors interconnecting a primary and a secondary power source with the memory storage device, characterized by first comparator means, jointly responsive to the voltage level of the primary power source and to a first threshold voltage, for turning off the MOS transistor interconnecting the primary power source and the memory storage device; second comparator means, jointly responsive to the voltage level of the primary power source and to a second threshold voltage, for turning on the MOS transistor interconnecting the secondary power source and the memory storage device, the second threshold voltage having a magnitude less than the magnitude of the first threshold voltage; and capacitor means for providing voltage to the memory storage device during the time interval that the magnitude of the voltage level of the primary power source is less than the first threshold voltage, but greater than the second threshold voltage.
Claim 15
Dependent Claim
48 words
The telephone set of claim 10 further characterized by means for increasing the current drain on the primary power source after the level of said primary power source has fallen below the first threshold voltage, whereby feedback is introduced to increase the speed of switching between power sources.