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US4491679A
Expired / Lapsed
US
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Thermoelectric materials and devices made therewith
Assignee: Energy Conversion Devices Inc
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Filing: 1983-07-21
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Granted: 1985-01-01
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Expires: 2003-07-21
Abstract
Abstract The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300 DEG C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced "figure of merit" values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials.
Inventors
- 👤 Diane E. Moore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 06:25
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/851; H10N10/852
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
12 words
A p-type disordered thermoelectric material comprising bismuth, antimony, tellurium, silver and lead.
Claim 2
Dependent Claim
12 words
A p-type disordered thermoelectric material comprising bismuth, antimony, tellurium, silver and lead.
Claim 3
Dependent Claim
29 words
The material of claim 1 wherein said silver is present in a concentration of less than 0.1 atomic % based on the content of bismuth, antimony, tellurium and silver.
Claim 4
Dependent Claim
16 words
The material of claim 2 wherein said silver concentration is less than about 0.05 atomic %.
Claim 5
Dependent Claim
16 words
The material of claim 3 wherein said silver concentration is at least about 0.016 atomic %.
Claim 6
Dependent Claim
19 words
The material of claim 1 wherein said lead is present in a concentration of up to about 1.0 wt.%.
Claim 7
Dependent Claim
19 words
The material of claim 5 wherein said lead is present in a concentration of at least about 0.01 wt.%.
Claim 8
Dependent Claim
20 words
The material of claim 6 wherein said lead is present in a concentration of from about 0.05 to 0.1 wt.%.
Claim 9
Dependent Claim
19 words
The material of claim 7 wherein said lead is present in a concentration of about 0.065 to 0.075 wt.%.
Claim 10
Dependent Claim
31 words
The material of claim 1 wherein the atomic precentages of the bismuth, antimony, tellurium and silver maybe expressed by the formula: Bi.sub.10 Sb.sub.30-x Ag.sub.x Te.sub.60 wherein X is less than 0.10.
Claim 11
Dependent Claim
13 words
The material of claim 9 wherein x is between about 0.016 and 0.05.
Claim 12
Dependent Claim
18 words
The material of claim 10 wherein said lead is additionally present in a concentration less than 1.0 wt.%.
Claim 13
Dependent Claim
20 words
The material of claim 11 wherein said lead is present in a concentration of from about 0.05 to 0.1 wt.%.
Claim 14
Dependent Claim
15 words
The material of claim 12 wherein the lead content is about 0.065 to 0.075 wt.%.
Claim 15
Dependent Claim
25 words
In a thermoelectric device including both p-type and n-type semiconductor elements, the improvement comprising including at least one p-type element as described in claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-01 | 1988-07-02 | 1989-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-01 | 1992-07-02 | 1993-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-01 | 1996-07-02 | 1997-01-01 | $7700.00 | Window Closed / Lapsed |