Abstract A method for impregnating copper into aluminum interconnect lines on a semiconductor device is disclosed. In a first embodiment, an interconnect pattern is formed on an aluminum layer by etching while the aluminum is substantially free from copper, and the copper is thereafter introduced to the formed interconnect lines. In a second embodiment, copper is introduced to the aluminum layer prior to formation of the desired interconnect pattern. The copper-rich layer is removed from the areas to be etched prior to etching. The method facilitates chlorine plasma etching of the aluminum which is inhibited by the presence of copper. The method is also useful with various wet etching processes where the formation of a copper-rich layer is found to stabilize the aluminum layer during subsequent processing .
A method for forming aluminum-copper interconnects on a semiconductor device, said method comprising: (a) layering aluminum substantially free from copper onto the device; (b) etching a predetermined interconnect pattern in the resulting aluminum layer prior to layering copper on the device; (c) removing aluminum oxide from the surface of the aluminum; (d) layering copper onto the resulting aluminum interconnect lines, wherein at least steps (c) and (d) are performed substantially in a vacuum; and (e) diffusing the layered copper into the aluminum by exposing the device to an elevated temperature.
Claim 2
Independent Claim
90 words
A method for forming aluminum-copper interconnects on a semiconductor device, said method comprising: (a) layering aluminum substantially free from copper onto the device; (b) etching a predetermined interconnect pattern in the resulting aluminum layer prior to layering copper on the device; (c) removing aluminum oxide from the surface of the aluminum; (d) layering copper onto the resulting aluminum interconnect lines, wherein at least steps (c) and (d) are performed substantially in a vacuum; and (e) diffusing the layered copper into the aluminum by exposing the device to an elevated temperature.
Claim 3
Dependent Claim
16 words
A method as in claim 1, wherein the elevated temperature is about 250° to 500° C.
Claim 4
Dependent Claim
16 words
A method as in claim 1, wherein the copper is layered onto the device by sputtering.
Claim 5
Dependent Claim
14 words
A method as in claim 1, wherein the aluminum layer is an aluminum-silicon alloy.
Claim 6
Dependent Claim
15 words
A method as in claim 1, wherein the etching is performed using a chlorine-containing plasma.
Claim 7
Dependent Claim
16 words
A method as in claim 1, wherein the etching is performed by a wet etching process.