Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
152 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single-crystal boule in the form of a longitudinal half of cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a <110> direction; slicing the boule into wafers to expose a (100) plane inclined by more than 0.5 degrees with respect to the (100) plane; assembling the resulting triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.
Claim 2
Dependent Claim
152 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single-crystal boule in the form of a longitudinal half of cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a <110> direction; slicing the boule into wafers to expose a (100) plane inclined by more than 0.5 degrees with respect to the (100) plane; assembling the resulting triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.
Claim 3
Dependent Claim
27 words
The process of claim 1 wherein said plane produced by said step of slicing is inclined by 0.5 to 5 degrees with respect to the (100) plane.
Claim 4
Dependent Claim
30 words
The process of claim 1 wherein said step of assembling said resulting triangular wafer comprises adhering said wafers with a material selected from the group consisting of waxes and adhesives.
Claim 5
Dependent Claim
26 words
The process of claim 1 wherein said step of grinding comprises grinding said prism of wafers into a generally cylindrical form having a small flat area.
Claim 6
Dependent Claim
12 words
The process of claim 1 wherein said step of separating comprises heating.
Claim 7
Dependent Claim
14 words
The process of claim 1 wherein said step of separating comprises applying a solvent.
Claim 8
Dependent Claim
143 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single crystal boule in the form of a longitudinal half of a cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a (100) direction; slicing the boule into wafers to expose a (100) plane; assembling the resulting substantially triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.
Claim 9
Dependent Claim
143 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single crystal boule in the form of a longitudinal half of a cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a (100) direction; slicing the boule into wafers to expose a (100) plane; assembling the resulting substantially triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.