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US4488930A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for producing circular gallium arsenide wafer

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1982-05-28
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Granted: 1984-12-18
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Expires: 2002-05-28
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Abstract

Abstract A process for producing a circular gallium arsenide wafer including the steps of growing a gallium arsenide single-crystal boule in the form of a longitudinal half of a cylinder by the boat method in such a manner that the intersection of the flat surface produced by the boat method and the plane vertical to the direction of crystal growth extends in a <110> direction, slicing the boule into wafers to expose a (100) plane or a plane inclined within 0.5 to 5 degress with respect to the (100) plane, assembling the resulting triangular-like wafers into a triangular-like prism, grinding the opposite edges of the flat surface of the outer periphery of the triangular-like prism of wafers in a direction in which the wafers are assembled; and separating the triangular-like prism into discrete circular wafers.

Inventors

  • 👤 Kiyohiko Koe

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 17:38
CPC Classifications
B; B28; B28D; B28D5/00; B24; B24B; B24B1/00; B24B9/00; B24B9/02; B24B9/06; B24B9/065; C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/42; C30B33/00; H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 152 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single-crystal boule in the form of a longitudinal half of cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a <110> direction; slicing the boule into wafers to expose a (100) plane inclined by more than 0.5 degrees with respect to the (100) plane; assembling the resulting triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.
Claim 2
Dependent Claim 152 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single-crystal boule in the form of a longitudinal half of cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a <110> direction; slicing the boule into wafers to expose a (100) plane inclined by more than 0.5 degrees with respect to the (100) plane; assembling the resulting triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.
Claim 3
Dependent Claim 27 words
The process of claim 1 wherein said plane produced by said step of slicing is inclined by 0.5 to 5 degrees with respect to the (100) plane.
Claim 4
Dependent Claim 30 words
The process of claim 1 wherein said step of assembling said resulting triangular wafer comprises adhering said wafers with a material selected from the group consisting of waxes and adhesives.
Claim 5
Dependent Claim 26 words
The process of claim 1 wherein said step of grinding comprises grinding said prism of wafers into a generally cylindrical form having a small flat area.
Claim 6
Dependent Claim 12 words
The process of claim 1 wherein said step of separating comprises heating.
Claim 7
Dependent Claim 14 words
The process of claim 1 wherein said step of separating comprises applying a solvent.
Claim 8
Dependent Claim 143 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single crystal boule in the form of a longitudinal half of a cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a (100) direction; slicing the boule into wafers to expose a (100) plane; assembling the resulting substantially triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.
Claim 9
Dependent Claim 143 words
A process for producing circular gallium arsenide wafers comprising the steps of: growing a gallium arsenide single crystal boule in the form of a longitudinal half of a cylinder by a boat method in such a manner that the intersection of a flat surface produced by the boat method and a plane vertical to the direction of the crystal growth extends in a (100) direction; slicing the boule into wafers to expose a (100) plane; assembling the resulting substantially triangular wafers into a triangular prism; grinding the opposite edges of the flat surface of the outer periphery of said triangular prism of wafers in a direction in which the wafers are assembled and grinding away high dislocation density triangular portions of said prism, such that said prism is ground into a generally cylindrical form; and separating said triangular prism into discrete circular wafers.

References Cited (Backward Citations)

US3475867A Cited
US3520810A Cited
US3834083A Cited
JPS4834069A Cited
US3970494A Cited
US4084354A Cited
JPS5415582A Cited
US4239567A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-12-18 1988-06-18 1988-12-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-12-18 1992-06-18 1992-12-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-12-18 1996-06-18 1996-12-18 $7700.00 Window Closed / Lapsed

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