Patent US4486465A successfully refreshed from Google Patents.
US4486465A
Expired / Lapsed
US
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Method for deposition on a semiconductor wafer
Assignee: Motorola Solutions Inc
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Filing: 1983-09-30
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Granted: 1984-12-04
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Expires: 2003-09-30
Abstract
Abstract A nitride-coated boat is used in a method for depositing phosphosilicate glass (PSG) on semiconductor wafers. Because stainless steel is the material typically used for the boat for PSG deposition, the linear coefficient of thermal expansion of the boat is significantly greater than that of PSG. Consequently, cooling the boat after PSG deposition tends to cause flaking of PSG from the boat. The nitride-coating on the boat buffers the contraction differential between the PSG and stainless steel to significantly reduce flaking of PSG.
Inventors
- 👤 Bich-Yen Nguygen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:02
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/02
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
43 words
A method for using a metal boat coated with nitride, comprising the steps of: placing semiconductor wafers in the boat; placing the boat in a heated tube; and introducing silane, phosphine, and oxygen into said tube to deposit phosphosilicate glass on said wafers.
Claim 2
Independent Claim
43 words
A method for using a metal boat coated with nitride, comprising the steps of: placing semiconductor wafers in the boat; placing the boat in a heated tube; and introducing silane, phosphine, and oxygen into said tube to deposit phosphosilicate glass on said wafers.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the boat is perforated stainless steel.
Claim 4
Dependent Claim
79 words
A process for depositing phosphosilicate glass on a semiconductor wafer, comprising the steps of: heating a first tube; inserting a stainless steel boat into the first tube; introducing ammonia and dichlorosilane into the first tube to deposit nitride on the boat; placing the wafer in the boat; heating a second tube; inserting the nitride-coated boat with the semiconductor wafer into the second tube; and introducing silane, phosphine, and oxygen into the tube to coat the wafer with phosphosilicate glass.
Claim 5
Dependent Claim
79 words
A process for depositing phosphosilicate glass on a semiconductor wafer, comprising the steps of: heating a first tube; inserting a stainless steel boat into the first tube; introducing ammonia and dichlorosilane into the first tube to deposit nitride on the boat; placing the wafer in the boat; heating a second tube; inserting the nitride-coated boat with the semiconductor wafer into the second tube; and introducing silane, phosphine, and oxygen into the tube to coat the wafer with phosphosilicate glass.
Claim 6
Dependent Claim
16 words
The method of claim 3 wherein the second tube is heated to at least 400° C.
Claim 7
Dependent Claim
118 words
A process for consecutively subjecting groups of semiconductor wafers to phosphosilicate glass deposition, comprising: coating a metal boat with nitride; heating a tube; placing a first group of semiconductor wafers in the boat; inserting the nitride-coated boat into the tube; introducing silane, phosphine, and oxygen into the tube to deposit phosphosilicate glass on the first group of wafers; removing the nitride-coated boat from the tube; removing the first group of wafers from the nitride-coated boat; placing a second group of semiconductor wafers in the nitride-coated boat; placing the nitride-coated boat containing the second group of wafers into the tube; and introducing silane, phosphine, and oxygen into the tube to deposit phosphosilicate glass on the second group of wafers.
Claim 8
Dependent Claim
118 words
A process for consecutively subjecting groups of semiconductor wafers to phosphosilicate glass deposition, comprising: coating a metal boat with nitride; heating a tube; placing a first group of semiconductor wafers in the boat; inserting the nitride-coated boat into the tube; introducing silane, phosphine, and oxygen into the tube to deposit phosphosilicate glass on the first group of wafers; removing the nitride-coated boat from the tube; removing the first group of wafers from the nitride-coated boat; placing a second group of semiconductor wafers in the nitride-coated boat; placing the nitride-coated boat containing the second group of wafers into the tube; and introducing silane, phosphine, and oxygen into the tube to deposit phosphosilicate glass on the second group of wafers.
Claim 9
Independent Claim
103 words
A method for making a deposition of material onto a semiconductor wafer placed in a metal boat, wherein the linear coefficient of thermal expansion of the metal is significantly different from that of the material, comprising the steps of: coating the metal boat with nitride; placing the wafer in the boat; inserting the nitride-coated boat into a heated tube; introducing gases into the tube to form said material, wherein said material is deposited on the wafer and the nitride-coated boat; and removing the nitride-coated boat from the heated tube and into an environment of significantly lower temperature than that of the heated tube.
Claim 10
Independent Claim
103 words
A method for making a deposition of material onto a semiconductor wafer placed in a metal boat, wherein the linear coefficient of thermal expansion of the metal is significantly different from that of the material, comprising the steps of: coating the metal boat with nitride; placing the wafer in the boat; inserting the nitride-coated boat into a heated tube; introducing gases into the tube to form said material, wherein said material is deposited on the wafer and the nitride-coated boat; and removing the nitride-coated boat from the heated tube and into an environment of significantly lower temperature than that of the heated tube.
Claim 11
Dependent Claim
13 words
The method of claim 6 wherein the metal boat is perforated stainless steel.
Claim 12
Dependent Claim
15 words
The method of claim 7 wherein the tube is heated to at least 400° C.
References Cited (Backward Citations)
US4098923A
Cited
US4389967A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-04 | 1988-06-04 | 1988-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-04 | 1992-06-04 | 1992-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-04 | 1996-06-04 | 1996-12-04 | $7700.00 | Window Closed / Lapsed |