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US4481042A
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US
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Ion implantation method
Assignee: Toshiba Corp
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Filing: 1982-12-08
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Granted: 1984-11-06
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Expires: 2002-12-08
Abstract
Abstract An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accordance with the gate region, source and drain regions, and the field region of a semiconductor device including a transistor having short gate length and width.
Inventors
- 👤 Tadahiro Takigawa
- 👤 Isao Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:58
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H01; H01J; H01J37/00; H01J37/30; H01J37/302; H01J37/317; H01J37/3171; H01J37/3172; Y; Y10; Y10S; Y10S438/00; Y10S438/961
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
200 words
An ion implantation method which uses an ion implantation apparatus comprising an ion gun and an ion optical system for producing a micro ion beam having a spot diameter which is smaller than the size of a region into which ions are to be implanted, a deflecting device for scanning the ion beam on a surface of a semiconductor wafer, a blanking device for blanking the ion beam, and a control device for controlling said devices, said method comprising the step of implanting the ions into at least one of a gate region, source and drain regions, and a field region of a semiconductor device comprising a transistor being formed on said wafer and having a short gate length and width, said method also comprising the steps of: determining an ion dose for a predetermined region of said wafer as a function of location thereof and storing the data of said ion dose in said control device; and controlling at least said deflecting device and said blanking device in accordance with said data so as to vary the ON time of the ion beam in accordance with said regions of said semiconductor device, thereby allowing variation of the ion dose.
Claim 2
Dependent Claim
200 words
An ion implantation method which uses an ion implantation apparatus comprising an ion gun and an ion optical system for producing a micro ion beam having a spot diameter which is smaller than the size of a region into which ions are to be implanted, a deflecting device for scanning the ion beam on a surface of a semiconductor wafer, a blanking device for blanking the ion beam, and a control device for controlling said devices, said method comprising the step of implanting the ions into at least one of a gate region, source and drain regions, and a field region of a semiconductor device comprising a transistor being formed on said wafer and having a short gate length and width, said method also comprising the steps of: determining an ion dose for a predetermined region of said wafer as a function of location thereof and storing the data of said ion dose in said control device; and controlling at least said deflecting device and said blanking device in accordance with said data so as to vary the ON time of the ion beam in accordance with said regions of said semiconductor device, thereby allowing variation of the ion dose.
Claim 3
Dependent Claim
32 words
A method according to claim 1, wherein said data is determined so that the ion dose during ion implantation into said gate region is increased with a decrease in the gate length.
Claim 4
Dependent Claim
39 words
A method according to claim 1, wherein said data is determined so that the ion dose during ion implantation into said source and drain regions is small at a portion of said drain region close to said gate region.
Claim 5
Dependent Claim
48 words
A method according to claim 1, wherein said data is determined so that the ion dose at a portion of said field region close to said source and drain regions and at a boundary between said field region and said channel region below said gate region is small.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-06 | 1988-05-07 | 1988-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-06 | 1992-05-07 | 1992-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-06 | 1996-05-07 | 1996-11-06 | $7700.00 | Window Closed / Lapsed |