Patent US4480209A successfully refreshed from Google Patents.
US4480209A
Expired / Lapsed
US
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Surface acoustic wave device having a specified crystalline orientation
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1982-10-08
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Granted: 1984-10-30
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Expires: 2002-10-08
Abstract
Abstract A surface acoustic wave device includes a silicon substrate having a main surface with a given crystalline orientation, a zinc oxide layer deposited on the main surface of the silicon substrate and a dielectric layer as well as electrodes both formed in contact with said zinc oxide layer, so that a surface acoustic wave will be propagated along a given crystalline axis direction of the silicon substrate.
Inventors
- 👤 Takeshi Okamoto
- 👤 Ryuichi Asai
- 👤 Shoichi Minagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:02
CPC Classifications
H; H03; H03H; H03H3/00; H03H3/007; H03H3/08; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02574
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
95 words
A surface acoustic wave device, comprising a silicon substrate having a main surface which has a predetermined crystalline orientation and has first and second portions; a layer of a dielectric provided on said first portion of said main surface of said substrate; a layer of zinc oxide provided on said dielectric layer and on said second portion of said main surface of said silicon substrate; and plural electrodes provided on said zinc oxide layer, electrical excitation of said electrodes causing a surface acoustic wave to propagate along a predetermined crystalline axis of said silicon substrate.
Claim 2
Dependent Claim
95 words
A surface acoustic wave device, comprising a silicon substrate having a main surface which has a predetermined crystalline orientation and has first and second portions; a layer of a dielectric provided on said first portion of said main surface of said substrate; a layer of zinc oxide provided on said dielectric layer and on said second portion of said main surface of said silicon substrate; and plural electrodes provided on said zinc oxide layer, electrical excitation of said electrodes causing a surface acoustic wave to propagate along a predetermined crystalline axis of said silicon substrate.
Claim 3
Dependent Claim
30 words
The surface acoustic wave of claim 1, including means defining a metallic layer between said zinc oxide layer and said second portion of said main surface of said silicon substrate.
Claim 4
Dependent Claim
20 words
The surface acoustic wave device of claim 1, wherein said main surface of said substrate has a (110) crystalline orientation.
Claim 5
Dependent Claim
19 words
The surface acoustic wave device of claim 1, wherein said predetermined crystalline axis of said silicon substrate is (001).
Claim 6
Dependent Claim
37 words
The surface acoustic wave device of claim 1, wherein a piezoelectric axis of said zinc oxide layer forms an angle in the range of 80° to 90° with respect to said main surface of said silicon substrate.
Claim 7
Dependent Claim
33 words
The surface acoustic wave device of claim 1, wherein the thickness h of said zinc oxide layer with respect to a wavelength λ of a surface acoustic wave is selected so that 0.9<2πh/λ<3.5.
Claim 8
Dependent Claim
17 words
The surface acoustic wave device of claim 1, wherein said dielectric layer is made of silicon dioxide.
Claim 9
Dependent Claim
133 words
A surface acoustic wave device, comprising a silicon substrate having a main surface with a predetermined crystalline orientation; a first layer provided on said main surface of said silicon substrate and a second layer provided on said first layer, one of said first and second layers being a dielectric and the other of said first and second layers including a layer of zinc oxide; and plural electrodes provided on said layer of zinc oxide, electrical excitation of said electrodes causing a surface acoustic wave to propagate along a predetermined crystalline axis of said silicon substrate; wherein said first layer includes said layer of zinc oxide; wherein said second layer is said dielectric; and wherein said first layer also includes a layer of metal disposed between said zinc oxide layer and said silicon substrate.
Claim 10
Dependent Claim
133 words
A surface acoustic wave device, comprising a silicon substrate having a main surface with a predetermined crystalline orientation; a first layer provided on said main surface of said silicon substrate and a second layer provided on said first layer, one of said first and second layers being a dielectric and the other of said first and second layers including a layer of zinc oxide; and plural electrodes provided on said layer of zinc oxide, electrical excitation of said electrodes causing a surface acoustic wave to propagate along a predetermined crystalline axis of said silicon substrate; wherein said first layer includes said layer of zinc oxide; wherein said second layer is said dielectric; and wherein said first layer also includes a layer of metal disposed between said zinc oxide layer and said silicon substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-30 | 1988-04-30 | 1988-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-30 | 1992-04-30 | 1992-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-30 | 1996-04-30 | 1996-10-30 | $7700.00 | Window Closed / Lapsed |