Patent US4479847A successfully refreshed from Google Patents.
US4479847A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Equilibrium crystal growth from substrate confined liquid
Assignee: California Institute of Technology
•
Filing: 1981-12-30
•
Granted: 1984-10-30
•
Expires: 2001-12-30
Abstract
Abstract A method for in situ growth of an array of single crystals from material deposited on an inert substrate is comprised of (1.0) preparing a surface of the substrate with a closely packed array of concavities which stably contain liquid material by the combined effects of surface tension and geometry, (2.0) depositing the material from which the crystals are to be grown on the prepared surface of the substrate to at least partially fill the concavities, (3.0) removing deposited material from the field by evaporation etching after the next step, and (4.0) crystallizing the material remaining in each concavity. The process may be followed by a further step (5.0) of recrystallizing the material to assure a single crystal in each concavity free of any defects, such as defects resulting from etching. Crystallization may be effected by isothermally heating the substrate at a liquid temperature of the deposited material and changing the composition of the deposited material, and deposited material may be removed from the field during the process of crystallizing the material. The concavities are preferably provided as densely packed polygons plasma etched with vertical walls.
Inventors
- 👤 James O. McCaldin
- 👤 Thomas F. Kuech
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:42
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B11/00; C30B11/002; C30B11/14
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
162 words
A method for in situ growth of an array of single crystals from nonwetting material deposited on an inert substrate comprising the steps of preparing a surface of said substrate with an array of concavities which, will the substrate uniformly heated, stably contain liquid material at the substrate temperature by the combined effects of surface tension and geometry, said array of concavities having a field between every pair of concavities having a width that is small relative to the smallest dimension of the concavities, said array having a geometry that maximizes the total concavity area, which is large relative to the total field area, depositing said material from which said crystals are to be grown on said prepared surface of said substrate to at least partially fill said concavities, chemically removing deposited material from said field without a mask, and crystallizing a single crystal from said material in each concavity with the substrate uniformly heated and said material at the same temperature.
Claim 2
Independent Claim
162 words
A method for in situ growth of an array of single crystals from nonwetting material deposited on an inert substrate comprising the steps of preparing a surface of said substrate with an array of concavities which, will the substrate uniformly heated, stably contain liquid material at the substrate temperature by the combined effects of surface tension and geometry, said array of concavities having a field between every pair of concavities having a width that is small relative to the smallest dimension of the concavities, said array having a geometry that maximizes the total concavity area, which is large relative to the total field area, depositing said material from which said crystals are to be grown on said prepared surface of said substrate to at least partially fill said concavities, chemically removing deposited material from said field without a mask, and crystallizing a single crystal from said material in each concavity with the substrate uniformly heated and said material at the same temperature.
Claim 3
Dependent Claim
32 words
A method as defined in claim 1 wherein crystallization is effected by isothermally heating said substrate at a liquid temperature of said deposited material and changing the composition of said deposited material.
Claim 4
Dependent Claim
29 words
A method as defined in claim 1 or 2, wherein said material is deposited on said substrate while said substrate is heated at a liquid temperature of said material.
Claim 5
Dependent Claim
23 words
A method as defined in claim 3, wherein said deposited material is removed from said field during the process of crystallizing said material.
Claim 6
Dependent Claim
14 words
A method as defined in claim 1 wherein said concavities are densely packed polygons.
Claim 7
Dependent Claim
24 words
A method as defined in claim 5 wherein said polygons are selected from a group of geometric configurations consisting of triangles, parallelograms and hexagons.
Claim 8
Dependent Claim
63 words
A method as defined in claim 1 wherein said material is deposited as a solid followed by heating above the melting point of said material and cooling below said melting point, and repeating the depositing, heating and cooling procedure a plurality of times to at least partially fill said concavities before chemically removing material deposited on the field of said substrate between concavities.
Claim 9
Dependent Claim
27 words
A method as defined in claim 1 wherein said concavities are densely packed irregular hexagons having alternate sides uniformly shorter than the remaining sides of uniform length.
Claim 10
Dependent Claim
28 words
A method as defined in claim 1 wherein said concavities are densely packed irregular hexagons having two opposite sides uniformly longer than the remaining sides of uniform length.
Claim 11
Dependent Claim
32 words
A method as defined in claim 1 wherein said concavities are densely packed regular hexagons having alternate sides with inclined upper edges, and the remaining sides undercut to leave an overhanging ledge.
Claim 12
Dependent Claim
14 words
A method as defined in claim 1 wherein said concavities are densely packed rectangles.
Claim 13
Dependent Claim
13 words
A method as defined in claim 11 wherein said rectangular concavities are square.
References Cited (Backward Citations)
JPS4934269A
Cited
US4251299A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-30 | 1988-04-30 | 1988-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-30 | 1992-04-30 | 1992-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-30 | 1996-04-30 | 1996-10-30 | $7700.00 | Window Closed / Lapsed |