Patent US4479845A successfully refreshed from Google Patents.
US4479845A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vapor growth with monitoring
Assignee: Semiconductor Research Foundation
•
Filing: 1982-06-14
•
Granted: 1984-10-30
•
Expires: 2002-06-14
Abstract
Abstract In vapor growth of a doped semiconductor layer on a substrate, a plurality of sampling points are selected in the layer to be grown and in the substrate and each treated as a diffusion source. Computation is carried out to provide the actual doping program for realizing a desired doping profile and to provide the resultant doping profile from the actual doping characteristics. Monitoring means monitors the vapor growth and feeds back information to computing means. The computing means rearrange the doping program and supply command to means for controlling the vapor growth. It is found it is effective to invert the conductivity type of impurity at least two times particularly in the initial stage of the vapor growth for providing a sharp profile of net impurity distribution.
Inventors
- 👤 Jun-ichi Nisizawa
- 👤 Masaaki Fukase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:47
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/16; C30B25/165
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
312 words
Method of controlled doped vapor growth of a doped crystalline semiconductor layer having a desired impurity density distribution profile on and within a semiconductor substrate, comprising the steps of: (a) defining said desired impurity density distribution profile on and within the semiconductor substrate as a function of a position coordinate located at an arbitrary position in the grown doped crystalline semiconductor layer to be produced and corresponding to a distance measured from the boundary between said substrate and said grown layer, (b) calculating, by computer means, the desired instantaneous doping level on the surface of the growing layer, corresponding to said grown layer, to be controlled at an arbitrary time during the doped vapor growth process as measured from the start of the doped vapor growth, (c) performing the doped vapor growth process in a reaction chamber by passing a doped vapor growth providing vapor stream through said chamber according to the calculated desired instantaneous doping levels while controlling the gaseous composition of the vapor stream passing through said chamber so as to make the corresponding actual instantaneous doping levels produced during the growth process equal to the corresponding calculated desired instantaneous doping levels, (d) monitoring the actual instantaneous doping levels from the start of the vapor growth progressively during the growth process by determining the gaseous composition of the vapor stream passing through said chamber, (e) calculating, by computer means, during the growth process the corresponding actual impurity density distribution profile at the total growth time based upon each monitored said actual instantaneous doping level, (f) calculating by computer means, during the growth process a deviation of the calculated desired instantaneous doping level corresponding to each monitored said actual instantaneous doping level, according to said step (b), and (g) revising said calculating desired instantaneous doping level to be controlled during the remainder of the growth process according to each such deviation.
Claim 2
Dependent Claim
312 words
Method of controlled doped vapor growth of a doped crystalline semiconductor layer having a desired impurity density distribution profile on and within a semiconductor substrate, comprising the steps of: (a) defining said desired impurity density distribution profile on and within the semiconductor substrate as a function of a position coordinate located at an arbitrary position in the grown doped crystalline semiconductor layer to be produced and corresponding to a distance measured from the boundary between said substrate and said grown layer, (b) calculating, by computer means, the desired instantaneous doping level on the surface of the growing layer, corresponding to said grown layer, to be controlled at an arbitrary time during the doped vapor growth process as measured from the start of the doped vapor growth, (c) performing the doped vapor growth process in a reaction chamber by passing a doped vapor growth providing vapor stream through said chamber according to the calculated desired instantaneous doping levels while controlling the gaseous composition of the vapor stream passing through said chamber so as to make the corresponding actual instantaneous doping levels produced during the growth process equal to the corresponding calculated desired instantaneous doping levels, (d) monitoring the actual instantaneous doping levels from the start of the vapor growth progressively during the growth process by determining the gaseous composition of the vapor stream passing through said chamber, (e) calculating, by computer means, during the growth process the corresponding actual impurity density distribution profile at the total growth time based upon each monitored said actual instantaneous doping level, (f) calculating by computer means, during the growth process a deviation of the calculated desired instantaneous doping level corresponding to each monitored said actual instantaneous doping level, according to said step (b), and (g) revising said calculating desired instantaneous doping level to be controlled during the remainder of the growth process according to each such deviation.
Claim 3
Dependent Claim
59 words
Method according to claim 1, wherein said substrate is of one conductivity type, and the growth process includes growing a first thin layer doped with impurity atoms of the corresponding conductivity type opposite to that of said substrate, and subsequently growing a second thin layer doped with impurity atoms of the same conductivity type as that of said substrate.
Claim 4
Dependent Claim
39 words
Method according to claim 1 wherein said monitoring in said step (d) is performed by observing the gaseous composition of the vapor stream in an observing means which includes a part of said chamber as a component part thereof.
Claim 5
Dependent Claim
54 words
Method according to claim 3 wherein said observing means is operated for passing infrared rays into the vapor stream in said chamber, for receiving said infrared rays which have propagated through said vapor stream, and for analyzing the spectrum of the so received infrared rays for determining the gaseous composition of said vapor stream.
Claim 6
Dependent Claim
41 words
Method according to claim 1 wherein said monitoring in said step (d) is performed by observing the gaseous composition of the vapor stream using a capillary positioned in said chamber for sampling said vapor stream for determining the gaseous composition thereof.
Claim 7
Dependent Claim
43 words
Method according to claim 1 wherein said position coordinate, said arbitrary time, said desired impurity density distribution profile and said desired instantaneous doping level to be controlled are respectively defined as sets of discrete samples thereof expressed in matrix form by computer means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-30 | 1988-04-30 | 1988-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-30 | 1992-04-30 | 1992-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-30 | 1996-04-30 | 1996-10-30 | $7700.00 | Window Closed / Lapsed |