FET Controlled Triac

Claim 2

Bidirectional thyristor or triac, comprising a semiconductor body, first and second antiparallel-connected thyristor sections integrated in said semiconductor body, each of said thyristor sections having an anode side, a cathode side, a first emitter zone on the cathode side, a first base zone on the cathode side, a second emitter zone on the anode side having a given conductivity type, and a second base zone of weak opposite conductivity type, a first field-effect transistor being integrated into said semiconductor body and having a control terminal, a control zone, a source zone, a source terminal, a drain zone and drain terminal defining a load path between the source terminal and the drain terminal, the load path of said first field-effect transistor being connected between said first emitter zone on the cathode side and said second base zone in the anode side of said first thyristor section, the source terminal being connected to said first emitter zone on the cathode side of said first thyristor section, and auxiliary zone having said given conductivity type of said emitter zone on the anode side of said second thyristor section, said auxiliary zone being disposed between said first emitter zone on the cathode side of said first thyristor section and said second emitter zone on the anode side of said second thyristor section, and a contact disposed on said auxiliary zone for connection to a control current source for controlling said second thyristor section, said second base zone adjoining said first base zone and said second emitter zone of said first thyristor section and said first base zone and said second emitter zone of said second thyristor section, and a resistor connected between said auxiliary zone and said control terminal of said first field-effect transistor.

Claim 3

Bidirectional thyristor or triac, comprising a semiconductor body, first and second antiparallel-connected thyristor sections integrated in said semiconductor body, each of said thyristor sections having an anode side, a cathode side a first emitter zone on the cathode side, a first base zone on the cathode side, a second emitter zone on the anode side having a given conductivity type, and a second base zone on the anode side of weak opposite conductivity type, a first field-effect transistor being integrated into said semiconductor body and having a control terminal, a control zone, a source zone, a source terminal, a drain zone and a drain terminal defining a load path between the source terminal and the drain terminal, the load path of said field-effect transistor being connected between said first emitter zone on the cathode side and said second base zone on the anode side of said first thyristor section, the source terminal being connected to said first emitter zone on the cathode side of said first thyristor section, an auxiliary zone having said given conductivity type of said emitter zone on the anode side of said second thyristor section, said auxiliary zone being disposed between said first emitter zone on the cathode side of said first thyristor section and said second emitter zone on the anode side of said second thyristor section, and a contact disposed on said auxiliary zone for connection to a control current source for controlling said second thyristor section, said second base zone adjoining said first base zone, and said second emitter zone of said first thyristor section and said first base zone and said second emitter zone of said second thyristor section, and a second field-effect transistor integrated in said semiconductor body and having a control terminal connected to the control terminal of said first field-effect transistor, a source terminal and a drain terminal defining a load path, said auxiliary zone contact being connected to an auxiliary voltage through said load path of said second field-effect transistor.

Claim 4

Bidirectional thyristor or triac, comprising a semiconductor body, first and second antiparallel-connected thyristor sections integrated in said semiconductor body, each of said thyristor sections having an anode side, a cathode side a first emitter zone on the cathode side, a first base zone on the cathode side, a second emitter zone on the anode side having a given conductivity type, and a second base zone on the anode side of weak opposite conductivity type, a first field-effect transistor being integrated into said semiconductor body and having a control terminal, a control zone, a source zone, a source terminal, a drain zone and a drain terminal defining a load path between the source terminal and the drain terminal, the load path of said field-effect transistor being connected between said first emitter zone on the cathode side and said second base zone on the anode side of said first thyristor section, the source terminal being connected to said first emitter zone on the cathode side of said first thyristor section, an auxiliary zone having said given conductivity type of said emitter zone on the anode side of said second thyristor section, said auxiliary zone being disposed between said first emitter zone on the cathode side of said first thyristor section and said second emitter zone on the anode side of said second thyristor section, and a contact disposed on said auxiliary zone for connection to a control current source for controlling said second thyristor section, said second base zone adjoining said first base zone, and said second emitter zone of said first thyristor section and said first base zone and said second emitter zone of said second thyristor section, and a second field-effect transistor integrated in said semiconductor body and having a control terminal connected to the control terminal of said first field-effect transistor, a source terminal and a drain terminal defining a load path, said auxiliary zone contact being connected to an auxiliary voltage through said load path of said second field-effect transistor.