Patent US4471367A successfully refreshed from Google Patents.
US4471367A
Expired / Lapsed
US
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MESFET Using a shallow junction gate structure on GaInAs
Assignee: Nokia Bell Labs
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Filing: 1981-12-04
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Granted: 1984-09-11
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Expires: 2001-12-04
Abstract
Abstract A thin and highly doped Ga 0 .47 In 0 .53 As layer disposed on a Ga 0 .47 In 0 .53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.
Inventors
- 👤 Chung Y. Chen
- 👤 Alfred Y. Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:07
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D30/87; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10D64/00; H10D64/60; H10D64/64; H10D8/00; H10D8/60
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
85 words
A semiconductor device comprising a InP substrate, and disposed on said substrate a first epitaxial layer comprising InGaAs having a N conductivity type, a second epitaxial layer comprising InGaAs having a P conductivity type, said second layer having a thickness between approximately 70 and 1000 Angstroms, a first electrical contact to said second layer; second and third electrical contacts to said first epitaxial layer deposited on and extending through said second layer, said first electrical contact being intermediate said second and said third electrical contacts.
Claim 2
Dependent Claim
85 words
A semiconductor device comprising a InP substrate, and disposed on said substrate a first epitaxial layer comprising InGaAs having a N conductivity type, a second epitaxial layer comprising InGaAs having a P conductivity type, said second layer having a thickness between approximately 70 and 1000 Angstroms, a first electrical contact to said second layer; second and third electrical contacts to said first epitaxial layer deposited on and extending through said second layer, said first electrical contact being intermediate said second and said third electrical contacts.
Claim 3
Dependent Claim
15 words
A device as recited in claim 1 further comprising an electrical contact to said substrate.
Claim 4
Dependent Claim
20 words
A device as recited in claim 2 in which said second epitaxial layer is essentially completely depleted at thermal equilibrium.
Claim 5
Dependent Claim
19 words
A device as recited in claim 3 in which said second layer has a thickness less than 150 Angstroms.
Claim 6
Dependent Claim
27 words
A device as recited in claim 1 in which said second epitaxial layer intermediate said first and second electrical contacts has a thickness less than 150 Angstroms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-11 | 1988-03-12 | 1988-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-11 | 1992-03-12 | 1992-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-11 | 1996-03-12 | 1996-09-11 | $7700.00 | Window Closed / Lapsed |