Patent US4470875A successfully refreshed from Google Patents.
US4470875A
Expired / Lapsed
US
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Fabrication of silicon devices requiring anisotropic etching
Assignee: Nokia Bell Labs
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Filing: 1983-11-09
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Granted: 1984-09-11
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Expires: 2003-11-09
Abstract
Abstract A method for micromachining precise semiconductor features involving a pre-etch for establishing proper mask alignment. In one embodiment, the pre-etch utilizes a mask opening which has at least two edges oriented at a significant angle with the nominal (110) direction of a silicon wafer. The silicon is anisotropically etched through this opening until the true (110) lines are revealed by the intersection of the (111) planes with the wafer surface. Two parallel lines will therefore be formed to provide alignment of the mask for subsequent feature definition. In a further embodiment, the silicon wafer is completely etched through so that a pit edge on the front surface is offset on the back surface by an amount equal to the wafer thickness. This provides front-to-back alignment in subsequent processing.
Inventors
- 👤 Tommy L. Poteat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 01:24
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; H10P50/69; H10P50/691; H10P50/693; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
116 words
A method of fabricating semiconductor devices by means of anisotropic etching of at least one major surface of a semiconductor wafer using a photolithographic mask including the step of providing an alignment mark for said mask in the wafer comprising the steps of: forming a pre-etch mask on the surface of the wafer with an opening having at least two edges at a substantial angle with the approximate crystal orientation desired for the alignment of the photolithographic mask; and anisotropically etching the surface through the pre-etch mask for a sufficient time to form at least two essentially parallel edges in the wafer where the etched surfaces intersect the wafer surface at the precise desired crystal orientation.
Claim 2
Independent Claim
116 words
A method of fabricating semiconductor devices by means of anisotropic etching of at least one major surface of a semiconductor wafer using a photolithographic mask including the step of providing an alignment mark for said mask in the wafer comprising the steps of: forming a pre-etch mask on the surface of the wafer with an opening having at least two edges at a substantial angle with the approximate crystal orientation desired for the alignment of the photolithographic mask; and anisotropically etching the surface through the pre-etch mask for a sufficient time to form at least two essentially parallel edges in the wafer where the etched surfaces intersect the wafer surface at the precise desired crystal orientation.
Claim 3
Dependent Claim
31 words
The method according to claim 1 wherein the semiconductor is silicon, the surface of the wafer lies in the (100) crystallographic plane and the desired crystallographic orientation is the (110) direction.
Claim 4
Dependent Claim
24 words
The method according to claim 1 wherein the angle of the pre-etch mask edges with the desired orientation lies within the range 15-75 degrees.
Claim 5
Dependent Claim
17 words
The method according to claim 1 wherein the opening in the pre-etch mask comprises an arrow configuration.
Claim 6
Dependent Claim
34 words
The method according to claim 1 further comprising the step of aligning the photolithographic mask by placing a reference line on the mask between and parallel with the parallel edges formed during the pre-etch.
Claim 7
Dependent Claim
41 words
The method according to claim 5 further comprising the step of etching V-grooves in the surface of the wafer utilizing a pattern in an etch mask formed from said photolithographic mask, each groove being adapted to receive therein an optical fiber.
Claim 8
Dependent Claim
58 words
The method according to claim 1 wherein the wafer is completely etched through to the opposite surface to form a hole with an edge which is offset from an edge in the hole on the front surface by an amount equal to the thickness of the substrate to permit alignment of features on the front and back surfaces.
Claim 9
Dependent Claim
40 words
The method according to claim 1 wherein the opening in the pre-etch mask comprises a double-arrow configuration so that etching forms at least two edges which are essentially colinear and at least a third edge which is essentially parallel thereto.
Claim 10
Independent Claim
148 words
A method of fabricating silicon devices by means of anisotropic etching a wafer utilizing a photolithographic mask on at least one major surface of the wafer which lies in the (100) crystallographic plane comprising the steps of: forming a pre-etch mask on the surface of the wafer with an opening comprising a double-arrow configuration having its major edges forming an acute angle with the approximate (110) crystallographic direction in the range 15-75 degrees; anisotropically etching the surface through the pre-etch mask for a sufficient time to form at least first and second colinear edges and a third edge displaced from the other two and parallel therewith where the etched surfaces intersect the wafer surface at the precise (110) direction of the substrate; and aligning the photolithographic mask by placing an alignment mark on the mask parallel with and in the space between the first, second and third edges.
Claim 11
Independent Claim
148 words
A method of fabricating silicon devices by means of anisotropic etching a wafer utilizing a photolithographic mask on at least one major surface of the wafer which lies in the (100) crystallographic plane comprising the steps of: forming a pre-etch mask on the surface of the wafer with an opening comprising a double-arrow configuration having its major edges forming an acute angle with the approximate (110) crystallographic direction in the range 15-75 degrees; anisotropically etching the surface through the pre-etch mask for a sufficient time to form at least first and second colinear edges and a third edge displaced from the other two and parallel therewith where the etched surfaces intersect the wafer surface at the precise (110) direction of the substrate; and aligning the photolithographic mask by placing an alignment mark on the mask parallel with and in the space between the first, second and third edges.
Claim 12
Independent Claim
105 words
A method of fabricating semiconductor devices by means of anisotropic etching of at least one major surface of the semiconductor wafer and forming elements on the opposite surface utilizing photolithographic masks including the step of providing an alignment mark for said masks on both surfaces of the wafer comprising the steps of: forming a pre-etch mask with an opening on one surface of the wafer; anisotropically etching the surface through the pre-etch mask for a sufficient time to completely etch through to the opposite surface of the substrate, the resulting edges of the hole in the surfaces providing the alignment marks for the photolithographic masks.
Claim 13
Independent Claim
105 words
A method of fabricating semiconductor devices by means of anisotropic etching of at least one major surface of the semiconductor wafer and forming elements on the opposite surface utilizing photolithographic masks including the step of providing an alignment mark for said masks on both surfaces of the wafer comprising the steps of: forming a pre-etch mask with an opening on one surface of the wafer; anisotropically etching the surface through the pre-etch mask for a sufficient time to completely etch through to the opposite surface of the substrate, the resulting edges of the hole in the surfaces providing the alignment marks for the photolithographic masks.
Claim 14
Dependent Claim
47 words
The method according to claim 10 wherein the semiconductor is silicon having its major surfaces lying in the (100) crystallographic planes and the edges in the opposite surface are offset from the edges in the one surface by an amount equal to the thickness of the wafer.
Claim 15
Dependent Claim
31 words
The method according to claim 10 further comprising the step of aligning reference marks on the photolithographic masks on both surfaces with the edges of the hole formed during the pre-etch.
Claim 16
Dependent Claim
35 words
The method according to claim 9 wherein the opening in the pre-etch mask comprises at least two parallel edges at a substantial angle with the approximate crystal orientation desired for alignment of the photolithographic masks.
Claim 17
Dependent Claim
34 words
The method according to claim 9 wherein the opening in the pre-etch mask comprises an arrow configuration oriented so that the edges of the holes in each surface comprise at least two parallel edges.
Claim 18
Dependent Claim
33 words
The method according to claim 14 wherein the photolithographic masks on both surfaces are aligned by placing a reference line on each mask between and parallel with the two edges on that surface.
Claim 19
Independent Claim
195 words
A method of fabricating silicon devices from a wafer by means of anisotropic etching utilizing photolithographic masks on both major surfaces of the wafer which lie in the (100) crystallographic plane comprising the steps of: forming a pre-etch mask on one surface of the wafer with an opening comprising a double-arrow configuration having its major edges forming an acute angle with the approximate (110) crystallographic direction in the range 15-75 degrees; anisotropically etching the surface through the pre-etch mask for a sufficient time to completely etch through the wafer to form a hole with at least first and second edges which are colinear and a third edge displaced from the other two and parallel therewith at both major surfaces where the etched surfaces intersect the wafer surfaces at the precise (110) direction of the wafer, at least one edge on the opposite surface being offset from an edge on the one surface by a distance equal to the thickness of the wafer; and aligning the photolithographic masks on both surfaces by placing an alignment mark on each mask parallel with and in the space between the first, second and third edges on their respective surface.
Claim 20
Independent Claim
195 words
A method of fabricating silicon devices from a wafer by means of anisotropic etching utilizing photolithographic masks on both major surfaces of the wafer which lie in the (100) crystallographic plane comprising the steps of: forming a pre-etch mask on one surface of the wafer with an opening comprising a double-arrow configuration having its major edges forming an acute angle with the approximate (110) crystallographic direction in the range 15-75 degrees; anisotropically etching the surface through the pre-etch mask for a sufficient time to completely etch through the wafer to form a hole with at least first and second edges which are colinear and a third edge displaced from the other two and parallel therewith at both major surfaces where the etched surfaces intersect the wafer surfaces at the precise (110) direction of the wafer, at least one edge on the opposite surface being offset from an edge on the one surface by a distance equal to the thickness of the wafer; and aligning the photolithographic masks on both surfaces by placing an alignment mark on each mask parallel with and in the space between the first, second and third edges on their respective surface.
References Cited (Backward Citations)
US3765969A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-11 | 1988-03-12 | 1988-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-11 | 1992-03-12 | 1992-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-11 | 1996-03-12 | 1996-09-11 | $7700.00 | Window Closed / Lapsed |