Abstract Titanium-containing silicon nitride film bodies include a film body having an essentially amorphous structure and containing particle-like titanium nitride, a film body consisting mainly of α-type crystal and containing particle-like TiN deposited in the crystal and having a crystal orientation of crystal face (OOl), and a film body consisting mainly of β-type crystal and containing column-like TiN deposited in the crystal along the c-axis direction thereof and having a crystal orientation of crystal face (OOl), which are produced by blowing a nitrogen depositing source, a silicon depositing source and a titanium depositing source on a substrate heated at 500°-1,900° C. by means of a blowpipe composed of a pipe assembly to perform chemical vapordeposition reaction.
A titanium-containing silicon nitride film body consisting mainly of α-type crystal, containing particle-like titanium nitride deposited in said crystal, and having a crystal orientation of a crystal face (OOl) of said α-type crystal.
Claim 2
Dependent Claim
33 words
A titanium-containing silicon nitride film body consisting mainly of α-type crystal, containing particle-like titanium nitride deposited in said crystal, and having a crystal orientation of a crystal face (OOl) of said α-type crystal.
Claim 3
Dependent Claim
38 words
A titanium-containing silicon nitride film body consisting mainly of β-type crystal, containing column-like titanium nitride deposited in said crystal along the c-axis direction thereof, and having a crystal orientation of a crystal face (OOl) of said β-type crystal.
Claim 4
Dependent Claim
38 words
A titanium-containing silicon nitride film body consisting mainly of β-type crystal, containing column-like titanium nitride deposited in said crystal along the c-axis direction thereof, and having a crystal orientation of a crystal face (OOl) of said β-type crystal.