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US4469568A
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Method for making thin-film transistors
Assignee: Japan Electronic Industry Development Association
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Filing: 1982-12-01
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Granted: 1984-09-04
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Expires: 2002-12-01
Abstract
Abstract A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.
Inventors
- 👤 Hiroaki Kato
- 👤 Kohhei Kishi
- 👤 Yutaka Takafuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:26
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/117; Y10S148/118
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
A method for making a thin-film transistor which comprises the steps of forming a first metal layer of Ta, which ultimately becomes a gate electrode, on an insulative substrate, forming a second metal layer of Nb on said first metal layer, simultaneously oxidizing said first and second metal layers by the use of an anodization technique to form first and second oxide layers of Ta 2 O 5 and Nb 2 O 5 , respectively, said first oxide layer being formed on said first layer of Ta and said second oxide layer being formed on said first oxide layer, and effecting a selective etching to remove only the second oxide layer of Nb 2 O 5 , thereby leaving the first oxide layer of Ta 2 O 5 to form the gate insulating layer for the Ta gate electrode.
Claim 2
Independent Claim
139 words
A method for making a thin-film transistor which comprises the steps of forming a first metal layer of Ta, which ultimately becomes a gate electrode, on an insulative substrate, forming a second metal layer of Nb on said first metal layer, simultaneously oxidizing said first and second metal layers by the use of an anodization technique to form first and second oxide layers of Ta 2 O 5 and Nb 2 O 5 , respectively, said first oxide layer being formed on said first layer of Ta and said second oxide layer being formed on said first oxide layer, and effecting a selective etching to remove only the second oxide layer of Nb 2 O 5 , thereby leaving the first oxide layer of Ta 2 O 5 to form the gate insulating layer for the Ta gate electrode.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-04 | 1988-03-05 | 1988-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-04 | 1992-03-05 | 1992-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-04 | 1996-03-05 | 1996-09-04 | $7700.00 | Window Closed / Lapsed |