Monolithic combined charge transfer and surface acoustic wave device

Claim 1

A monolithic, programmable apparatus for performing high-frequency, high-speed signal processing under the control of low-frequency, low-speed electrical signals comprising: (a) a semiconductor substrate having in its central region an integrated circuit array of charge carriers; (b) an insulating oxide layer, said layer grown over said array of said charge carriers and extending over the entire upper surface of said substrate; (c) a pair of conducting pads deposited upon said oxide layer, said pads located at oposite ends of said substrate; (d) a film of a piezoelectric material deposited over said conducting pads and the entire surface of said oxide layer; (e) means for inserting an electroacoustic signal into said substrate, said inserting means also having capability for retrieving said signal; (f) means for addressing each of said charge carriers selectively such that the charge in each of said carriers may be sampled and regulated, said addressing means permitting storage of said electroacoustic signal and any selective modulation of said signal; (g) means for inputting an analog signal to said addressing means; and (h) means for controlling said addressing means with said low-speed, low-frequency electrical signals.