US4467656A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transducer apparatus employing convoluted semiconductor diaphragms
Assignee: Kulite Semiconductor Products Inc
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Filing: 1983-03-07
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Granted: 1984-08-28
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Expires: 2003-03-07
Abstract
Abstract A pressure transducer employing a semiconductor diaphragm having a convoluted central section surrounded by a rigid peripheral section. The convolutions are a series of concentric grooves formed as squares producing a square nonplanar diaphragm in the preferred embodiment. The convolutions are formed on the semiconductor wafer by an anisotropic etch. Piezoresistive devices are diffused into the diaphragm in the peripheral region to form a bridge array. The transducer structure thus formed is capable of producing a linear and large magnitude voltage signal in response to a relatively small applied pressure or force.
Inventors
- 👤 Joseph R. Mallon
- 👤 Anthony D. Kurtz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:08
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0054; G01L9/0042; Y; Y10; Y10S; Y10S73/00; Y10S73/04
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
59 words
A pressure transducer, comprising: a convoluted semiconductor diaphragm member having a central portion manifesting a plurality of concentric recesses forming a series of convolutions and an outer nondeflecting peripheral area at least one semiconductor sensor deposited on said diaphragm within said peripheral area with a portion of said sensor being located proximate to an edge of an outer convolution.
Claim 2
Dependent Claim
59 words
A pressure transducer, comprising: a convoluted semiconductor diaphragm member having a central portion manifesting a plurality of concentric recesses forming a series of convolutions and an outer nondeflecting peripheral area at least one semiconductor sensor deposited on said diaphragm within said peripheral area with a portion of said sensor being located proximate to an edge of an outer convolution.
Claim 3
Dependent Claim
26 words
The pressure transducer according to claim 1, wherein said semiconductor diaphragm is square in configuration with said concentric recesses being a series of square shaped convolutions.
Claim 4
Dependent Claim
19 words
The pressure transducer according to claim 1, wherein said semiconductor sensor is diffused into the surface of said diaphragm.
Claim 5
Dependent Claim
17 words
The pressure transducer according to claim 1, wherein said concentric recesses each have a trapezoidal cross section.
Claim 6
Dependent Claim
15 words
The pressure transducer according to claim 1, wherein said semiconductor diaphragm is fabricated from silicon.
Claim 7
Dependent Claim
13 words
The pressure transducer according to claim 1, wherein said semiconductor sensors are piezoresistors.
Claim 8
Dependent Claim
17 words
The pressure transducer according to claim 1, wherein said convoluted recesses are formed by an anisotropic etch.
Claim 9
Dependent Claim
98 words
A pressure transducer comprising: a convoluted semiconductor diaphragm of a relatively square shaped configuration having a central area manifesting a series of concentric square shaped convolutions with an outer nondeflecting peripheral area first and second piezoresistive sensors deposited on said diaphragm within said peripheral area and located on opposite sides along the same first axis and operative to respond to mainly transverse stress, third and fourth piezoresistive sensors deposited on said diaphragm within said peripheral area and located on opposite sides of a second axis, perpendicular to said first axis and operative to respond to mainly longitudinal stress.
Claim 10
Dependent Claim
98 words
A pressure transducer comprising: a convoluted semiconductor diaphragm of a relatively square shaped configuration having a central area manifesting a series of concentric square shaped convolutions with an outer nondeflecting peripheral area first and second piezoresistive sensors deposited on said diaphragm within said peripheral area and located on opposite sides along the same first axis and operative to respond to mainly transverse stress, third and fourth piezoresistive sensors deposited on said diaphragm within said peripheral area and located on opposite sides of a second axis, perpendicular to said first axis and operative to respond to mainly longitudinal stress.
Claim 11
Dependent Claim
26 words
The pressure transducer according to claim 8 further comprising: interconnecting means for connecting said first, second, third and fourth piezoresistive sensors in a Wheatstone bridge array.
Claim 12
Dependent Claim
16 words
The pressure transducer according to claim 9, wherein said convolutions are formed by an anisotropic etch.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-28 | 1988-02-27 | 1988-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-28 | 1992-02-27 | 1992-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-28 | 1996-02-27 | 1996-08-28 | $7700.00 | Window Closed / Lapsed |