US4466869A
Expired / Lapsed
US
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Photolytic production of hydrogen
Assignee: Energy Conversion Devices Inc
•
Filing: 1983-08-15
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Granted: 1984-08-21
•
Expires: 2003-08-15
Abstract
Abstract Disclosed is a photolytic device comprising a photoelectrode having a plurality of stacked, individual photoelectric or photovoltaic elements between a substrate and an electrode, a counterelectrode which may be a separate spaced counterelectrode or the substrate, and an unbiased external circuit. Also disclosed is a method of forming hydrogen using the photolytic device.
Inventors
- 👤 William Ayers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:14
CPC Classifications
C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; H; H01; H01G; H01G9/00; H01G9/20; H01M; H01M14/00; H01M14/005
Claims Analysis
Total Claims: 74
Claim 1
Independent Claim
100 words
In a method of photolytic production of hydrogen in a photolytic device comprising maintaining an aqueous electrolyte in contact with an anode and a cathode, one of said anode and cathode being a photoelectrode, illuminating the photoelectrode, evolving hydrogen at the cathode and a co-product at the anode, the improvement wherein said photoelectrode comprises a substantially transparent, electrolyte resistance electrocatalytic layer, an electroconductive substrate, and a layered semiconductor photoelectrode element means between and in contact with the electrocatalytic layer and the electroconductive substrate, and wherein the anode and the cathode are electrically connected to each other through an unbiased circuit.
Claim 2
Dependent Claim
100 words
In a method of photolytic production of hydrogen in a photolytic device comprising maintaining an aqueous electrolyte in contact with an anode and a cathode, one of said anode and cathode being a photoelectrode, illuminating the photoelectrode, evolving hydrogen at the cathode and a co-product at the anode, the improvement wherein said photoelectrode comprises a substantially transparent, electrolyte resistance electrocatalytic layer, an electroconductive substrate, and a layered semiconductor photoelectrode element means between and in contact with the electrocatalytic layer and the electroconductive substrate, and wherein the anode and the cathode are electrically connected to each other through an unbiased circuit.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein the other of said anode and cathode is spaced from and faces the transparent, electrolyte resistant, electrocatalytic layer, with the electrolyte therebetween.
Claim 4
Dependent Claim
59 words
The method of claim 1 wherein the layered semiconductor photoelectric element means comprises a plurality of individual photoelectrode elements of sequentially decreasing band gap, whereby the individual photoelectrode element in contact with the electrocatalytic layer is formed of high band gap material and the individual photoelectrode element in contact with the substrate is formed of low band gap material.
Claim 5
Dependent Claim
40 words
The method of claim 3 wherein the layered semiconductor photoelectrode element means comprises a first individual photoelectric element in substantially ohmic contact with the electrocatalytic layer, and a second individual photoelectrode element in substantially ohmic contact with the electroconductive substrate.
Claim 6
Dependent Claim
33 words
The method of claim 4 wherein said first and second individual photoelectric elements generate substantially matched currents from illumination passing through said first individual photoelectric element and into said second individual photoelectric element.
Claim 7
Dependent Claim
27 words
The method of claim 4 wherein said layered semiconductor photoelectrode means comprises at least one further individual photoelectric element between said first and second individual photoelectric elements.
Claim 8
Dependent Claim
21 words
The method of claim 4 wherein said first and second individual photoelectric elements are cascade elements having substantially direct contact therebetween.
Claim 9
Dependent Claim
17 words
The method of claim 4 wherein said first and second individual photoelectric elements have external contact therebetween.
Claim 10
Dependent Claim
17 words
The method of claim 3 wherein an individual photoelectric element is formed of variable band gap materials.
Claim 11
Dependent Claim
24 words
The method of claim 9 wherein an individual photoelectric element comprises a layer of p-type amorphous semiconductor and a layer of n-type amorphous semiconductor.
Claim 12
Dependent Claim
33 words
The method of claim 10 wherein the individual photoelectric element comprises a layer of intrinsic amorphous semiconductor between and in junction contact with the layers of p-type amorphous semiconductor and n-type amorphous semiconductor.
Claim 13
Dependent Claim
22 words
The method of claim 10 wherein the amorphous semiconductor comprises a density of states reducing element and a band gap adjusting element.
Claim 14
Dependent Claim
14 words
The method of claim 12 wherein the density of state reducing element is fluorine.
Claim 15
Dependent Claim
12 words
The method of claim 13 wherein the amorphous semiconductor further comprises hydrogen.
Claim 16
Dependent Claim
19 words
The method of claim 12 wherein the amorphous semiconductor is silicon and the band gap adjusting element is germanium.
Claim 17
Dependent Claim
15 words
The method of claim 10 wherein the layers of amorphous semiconductor are formed by deposition.
Claim 18
Dependent Claim
14 words
The method of claim 16 wherein the layers are deposited by glow discharge deposition.
Claim 19
Dependent Claim
22 words
The method of claim 16 wherein the layer of n-type semiconductor is formed by introducing n-type dopant during deposition of the layer.
Claim 20
Dependent Claim
22 words
The method of claim 16 wherein the layer of p-type semiconductor is formed by introducing p-type dopant during deposition of the layer.
Claim 21
Dependent Claim
22 words
The method of claim 1 wherein the photoelectrode is a cathode having p-type semiconductor material in ohmic contact with the electrocatalytic layer.
Claim 22
Dependent Claim
34 words
The method of claim 20 wherein the electrocatalytic layer comprises a material chosen from the group consisting of iron, cobalt, nickel, rhodium, ruthenium, palladium, osmium, iridium, platinum, oxides thereof, alloys thereof, and combinations thereof.
Claim 23
Dependent Claim
26 words
The method of claim 21 wherein the electrocatalytic layer comprises a high surface area material chosen from the group consisting of Raney nickel and platinum black.
Claim 24
Dependent Claim
27 words
The method of claim 21 wherein the electrocatalytic layer comprises an electrolyte resistant, p-type, compound semiconductor chosen from the group consisting of nickel oxide and ferric oxide.
Claim 25
Dependent Claim
32 words
The method of claim 21 wherein the electrocatalytic layer comprises an intrinsic semiconductor chosen from the group consisting of Fe 3 O 4 , Co 3 O 4 , and mixtures thereof.
Claim 26
Dependent Claim
20 words
The method of claim 20 comprising evolving hydrogen at the electrocatalytic layer of the photoelectrode, and coproduct at the anode.
Claim 27
Dependent Claim
21 words
The method of claim 1 wherein the photoelectrode is an anode having n-type semiconductor material in contact with the electrocatalytic layer.
Claim 28
Dependent Claim
14 words
The method of claim 26 wherein the electrocatalytic layer comprises ruthenium and titanium oxides.
Claim 29
Dependent Claim
14 words
The method of claim 26 wherein the electrocatalytic layer comprises indium and tin oxides.
Claim 30
Dependent Claim
15 words
The method of claim 26 wherein the electrocatalytic layer comprises an electrolyte resistant, n-type semiconductor.
Claim 31
Dependent Claim
16 words
The method of claim 26 comprising evolving hydrogen at the cathode and co-product at the photoelectrode.
Claim 32
Dependent Claim
31 words
The method of claim 1 wherein the aqueous electrolyte contains a halide chosen from the group consisting of chlorides, bromides, iodides and mixtures thereof, and the anodic co-product in the halogen.
Claim 33
Dependent Claim
25 words
The method of claim 31 wherein the aqueous halide is chosen from the group consisting of hydrogen, lithium, sodium and potassium halides, and mixtures thereof.
Claim 34
Dependent Claim
14 words
The method of claim 1 comprising feeding electrolyte to the photolytic device during photolysis.
Claim 35
Dependent Claim
15 words
The method of claim 33 comprising withdrawing depeleted electrolyte from the photolytic device during photolysis.
Claim 36
Dependent Claim
24 words
The method of claim 34 comprising substantially continuously feeding electrolyte to the photolytic device and withdrawing depleted electrolyte from the photolytic device during photolysis.
Claim 37
Dependent Claim
24 words
The method of claim 35 comprising withdrawing depleted electrolyte from the photolytic device, fortifying the depleted electrolyte, and subjecting the fortified electrolyte to photolysis.
Claim 38
Dependent Claim
10 words
The method of claim 36 comprising withdrawing hydrogen during photolysis.
Claim 39
Dependent Claim
12 words
The method of claim 37 comprising substantially continuously withdrawing hydrogen during photolysis.
Claim 40
Dependent Claim
86 words
A photolytic device coprising: (a.) a photoelectrode comprising: (1.) an electrocatalytic surface substantially resistant to aqueous halide solutions and substantially transparent; (2.) an electrically conductive substrate; and (3.) a plurality of layered, individual semiconductor photoelectric element means between and in contact with the electrocatalytic layer and the electrically conductive substrate; (b.) a substantially non photoactive, electrolyte resistant counter electrode electrically in circuit with the photoelectrode through an unbiased circuit; and (c.) means for maintaining a aqueous electrolyte in contact with the counter electrode and the photoelectrode.
Claim 41
Dependent Claim
86 words
A photolytic device coprising: (a.) a photoelectrode comprising: (1.) an electrocatalytic surface substantially resistant to aqueous halide solutions and substantially transparent; (2.) an electrically conductive substrate; and (3.) a plurality of layered, individual semiconductor photoelectric element means between and in contact with the electrocatalytic layer and the electrically conductive substrate; (b.) a substantially non photoactive, electrolyte resistant counter electrode electrically in circuit with the photoelectrode through an unbiased circuit; and (c.) means for maintaining a aqueous electrolyte in contact with the counter electrode and the photoelectrode.
Claim 42
Dependent Claim
24 words
The photolytic device of claim 39 wherein the counter electrode is spaced from the photoelectrode and faces the transparent, electrolyte resistant, electrocatalytic layer thereon.
Claim 43
Dependent Claim
57 words
The photolytic device of claim 39 wherein the photoelectrode comprises a plurality of layered, individual semiconductor photoelectric elements of sequentially decreasing band gap, the individual semiconductor element in contact with the electrocatalytic layer being formed of high band gap material and the individual photoelectrode element in contact with the substrate being formed of low band gap material.
Claim 44
Dependent Claim
35 words
The photolytic device of claim 41 wherein the photoelectrode comprises at least one further individual semiconductor photoelectric element of intermediate band gap interposed between the high band gap material and the low band gap material.
Claim 45
Dependent Claim
21 words
The photolytic device of claim 41 wherein the individual semiconductor photoelectric elements are cascade elements having substantially direct junction contact therebetween.
Claim 46
Dependent Claim
16 words
The photolytic device of claim 41 wherein the individual semiconductor photoelectric elements have external contact therebetween.
Claim 47
Dependent Claim
19 words
The photolytic device of claim 41 wherein an individual semiconductor photoelectric element is formed of variable band gap materials.
Claim 48
Dependent Claim
26 words
The photolytic device of claim 45 wherein an individual semiconductor photoelectric element comprises a layer of p-type amorphous semiconductor and a layer of n-type amorphous semiconductor.
Claim 49
Dependent Claim
34 words
The photolytic device of claim 46 wherein an individual semiconductor element comprises a layer of intrinsic amorphous semiconductor between and in junction contact with the layers of p-type amorphous semiconductor and n-type amorphous semiconductor.
Claim 50
Dependent Claim
23 words
The photolytic device of claim 46 wherein the amorphous semiconductor comprises a density of states reducing element and a band gap adjusting element.
Claim 51
Dependent Claim
15 words
The photolytic device of claim 48 wherein the density of states reducing element is fluorine.
Claim 52
Dependent Claim
12 words
The photolytic device of claim 49 wherein the amorphous semiconductor comprises hydrogen.
Claim 53
Dependent Claim
20 words
The photolytic device of claim 48 wherein the amorphous semiconductor is silicon and the band gap adjusting element is germanium.
Claim 54
Dependent Claim
13 words
The photolytic device of claim 46 wherein the layers are formed by deposition.
Claim 55
Dependent Claim
15 words
The photolytic device of claim 52 wherein the layers are deposited by glow discharge deposition.
Claim 56
Dependent Claim
23 words
The photolytic device of claim 52 wherein the layer of n-type semiconductor is formed by introducing n-type dopant during deposition of the layer.
Claim 57
Dependent Claim
23 words
The photolytic device of claim 52 wherein the layer of p-type semiconductor is formed by introducing p-type dopant during deposition of the layer.
Claim 58
Dependent Claim
20 words
The photolytic device of claim 39 wherein the counterelectrode comprises an electrocatalytic layer on the opposite surface of the substrate.
Claim 59
Dependent Claim
22 words
The photolytic device of claim 56 wherein the photoelectrode is a cathode having p-type semiconductor material in contact with the electrocatalytic layer.
Claim 60
Dependent Claim
35 words
The photolytic device of claim 57 wherein the electrocatalytic layer comprises of material chosen from the group consisting of iron, cobalt, nickel, rhodium, ruthenium, palladium, osmium, iridium, platinum, oxides thereof, alloys thereof, and combinations thereof.
Claim 61
Dependent Claim
27 words
The photolytic device of claim 57 wherein the electrocatalytic layer comprises a high surface area material chosen from the group consisting of Raney nickel and platinum black.
Claim 62
Dependent Claim
28 words
The photolytic device of claim 57 wherein the electrocatalytic layer comprises an electrolyte resistant, p-type, compound semiconductor chosen from the group consisting of nickel oxide and ferric oxide.
Claim 63
Dependent Claim
33 words
The photolytic device of claim 57 wherein the electrocatalytic layer comprises an intrinsic semiconductor chosen from the group consisting of Fe 3 O 4 , Co 3 O 4 , and mixtures thereof.
Claim 64
Dependent Claim
23 words
The photolytic device of claim 56 wherein the photoelectrode is an anode having an n-type semiconductor material in contact with the electrocatalytic layer.
Claim 65
Dependent Claim
15 words
The photolytic device of claim 62 wherein the electrocatalytic layer comprises ruthenium and titanium oxides.
Claim 66
Dependent Claim
15 words
The photolytic device of claim 62 wherein the electrocatalytic layer comprises indium and tin oxides.
Claim 67
Dependent Claim
18 words
The photolytic device of claim 62 wherein the electrocatalytic layer comprises an electrolyte resistant, substantially transparent, n-type semiconductor.
Claim 68
Dependent Claim
15 words
The photolytic device of claim 56 comprising means for feeding electrolyte to the photolytic device.
Claim 69
Dependent Claim
17 words
The photolytic device of a claim 66 comprising meas for withdrawing depleted electrolyte from the photolytic device.
Claim 70
Dependent Claim
38 words
The photolytic device of claim 67 wherein the means for feeding electrolyte to the photolytic device and withdrawing depleted electrolyte therefrom comprise means for substantially continuously feeding electrolyte and means for substantially continuously withdrawing depleted electrolyte during photolysis.
Claim 71
Dependent Claim
12 words
The photolytic device of claim 68 comprising means for fortifying depleted electrolyte.
Claim 72
Dependent Claim
16 words
The photolytic device of claims 69 comprising means for feeding fortified electrolyte to a photolytic device.
Claim 73
Dependent Claim
15 words
The photolytic device of claim 68 comprising means for substantially continuously withdrawing hydrogen during photolysis.
Claim 74
Dependent Claim
24 words
The method of claim 1 wherein the other of said anode and cathode comprises an electrocatalytic layer on the opposite surface of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-21 | 1988-02-20 | 1988-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-21 | 1992-02-20 | 1992-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-21 | 1996-02-20 | 1996-08-21 | $7700.00 | Window Closed / Lapsed |